公开(公告)号：US20210343679A1

公开(公告)日：2021-11-04

申请号：US16863188

申请日：2020-04-30

Applicant: Cree, Inc.

Inventor： Kenneth P. Brewer ,  Warren Brakensiek

IPC: H01L23/00 ,  H01L23/522 ,  H01L23/64

Abstract: Fabrication of a bondwire inductor between connection pads of a semiconductor package using a wire bonding process is disclosed herein. To that end, the bondwire inductor is fabricated by extending a bondwire connecting two connection pads of the semiconductor package around a dielectric structure, e.g., a dielectric post or posts, disposed between the connection pads a defined amount. In so doing, the bondwire inductor adds inductance between the connection pads, where the added inductance is defined by factors which at least include the amount the bondwire extends around the dielectric structure. Such additional inductance may be particularly beneficial for certain semiconductor devices and/or circuits, e.g., monolithic microwave integrated circuits (MMICs) to control or supplement impedance matching, harmonic termination, matching biasing, etc.

公开(公告)号：US20220140794A1

公开(公告)日：2022-05-05

申请号：US17085367

申请日：2020-10-30

Applicant: Cree, Inc.

Inventor： Kenneth P. Brewer ,  Basim Noori ,  Marvin Marbell

IPC: H03F3/195 ,  H03F1/56 ,  H03F3/21

Abstract: RF transistor amplifiers are provided that include a submount and an RF transistor amplifier die that is mounted on top of the submount. A multi-layer encapsulation is formed that at least partially covers the RF transistor amplifier die. The multi-layer encapsulation includes a first dielectric layer and a first conductive layer, where the first dielectric layer is between a top surface of the RF transistor amplifier die and the first conductive layer.

公开(公告)号：US11715722B2

公开(公告)日：2023-08-01

申请号：US16863188

申请日：2020-04-30

Applicant: Cree, Inc.

Inventor： Kenneth P. Brewer ,  Warren Brakensiek

IPC: H01L23/00 ,  H01L23/64 ,  H01L23/522

CPC classification number: H01L24/85 ,  H01L23/5227 ,  H01L23/645 ,  H01L24/03 ,  H01L24/05 ,  H01L24/43 ,  H01L24/45

Abstract: Fabrication of a bondwire inductor between connection pads of a semiconductor package using a wire bonding process is disclosed herein. To that end, the bondwire inductor is fabricated by extending a bondwire connecting two connection pads of the semiconductor package around a dielectric structure, e.g., a dielectric post or posts, disposed between the connection pads a defined amount. In so doing, the bondwire inductor adds inductance between the connection pads, where the added inductance is defined by factors which at least include the amount the bondwire extends around the dielectric structure. Such additional inductance may be particularly beneficial for certain semiconductor devices and/or circuits, e.g., monolithic microwave integrated circuits (MMICs) to control or supplement impedance matching, harmonic termination, matching biasing, etc.

公开(公告)号：US11677362B2

公开(公告)日：2023-06-13

申请号：US17085367

申请日：2020-10-30

Applicant: Cree, Inc.

Inventor： Kenneth P. Brewer ,  Basim Noori ,  Marvin Marbell

IPC: H03F3/195 ,  H03F1/56 ,  H03F3/21

CPC classification number: H03F3/195 ,  H03F1/565 ,  H03F3/211 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/451

Abstract: RF transistor amplifiers are provided that include a submount and an RF transistor amplifier die that is mounted on top of the submount. A multi-layer encapsulation is formed that at least partially covers the RF transistor amplifier die. The multi-layer encapsulation includes a first dielectric layer and a first conductive layer, where the first dielectric layer is between a top surface of the RF transistor amplifier die and the first conductive layer.