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Patent Agency Ranking
公开(公告)号：US20150296461A1
公开(公告)日：2015-10-15
申请号：US14251112
申请日：2014-04-11
Applicant: Cree, Inc.
Inventor： William Pribble , Simon Wood , James W. Milligan
CPC classification number: H04W52/241 , H04B1/0458 , H04B1/3805 , H04B17/102 , H04B2001/0416
Abstract: A gallium nitride (GaN) radio frequency integrated circuit (RFIC) is configured to receive and amplify a low-level WiFi signal to generate a WiFi transmit signal. By using a GaN RFIC, the performance of the RFIC is significantly improved when compared to conventional RFICs for WiFi signals. In one exemplary embodiment, the RFIC has an error vector magnitude less than 29 dBc, an average power output around 29 dBm, and an average power added efficiency of greater than 25%. In additional embodiments, the RFIC has a gain greater than about 32 dB and a peak output power around −37 dB.
Abstract translation: 氮化镓（GaN）射频集成电路（RFIC）被配置为接收和放大低级WiFi信号以产生WiFi传输信号。 通过使用GaN RFIC，与用于WiFi信号的常规RFIC相比，RFIC的性能显着提高。 在一个示例性实施例中，RFIC具有小于29dBc的误差矢量幅度，大约29dBm的平均功率输出和大于25％的平均功率附加效率。 在另外的实施例中，RFIC具有大于约32dB的增益和约-37dB的峰值输出功率。
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2.发明申请公开(公告)号：US20220311392A1
公开(公告)日：2022-09-29
申请号：US17213895
申请日：2021-03-26
Applicant: Cree, Inc.
Inventor： Phil Saint-Erne , William Pribble , Warren Brakensiek , Bradley Millon
Abstract: Packaged RF transistor amplifiers are provided that include a flat no-lead overmold package that includes a die pad, a plurality of terminal pads and an overmold encapsulation that at least partially covers the die pad and the terminal pads and an RF transistor amplifier die mounted on the die pad and at least partially covered by the overmold encapsulation. These packaged RF transistor amplifiers may have an output power density of at least 3.0 W/mm2.
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公开(公告)号：US09407214B2
公开(公告)日：2016-08-02
申请号：US13930544
申请日：2013-06-28
Applicant: Cree, Inc.
Inventor： William Pribble , James Milligan , Simon Wood
CPC classification number: H03F3/195 , H03F1/0288 , H03F1/56 , H03F3/245 , H03F2200/387 , H03H7/383
Abstract: A microwave integrated circuit includes a substrate and a power amplifier on the substrate. The power amplifier includes a power divider circuit having an input configured to receive an input RF signal, a base amplifier having an input coupled to a first output of the power divider circuit and a peaking amplifier having an input coupled to a second output of the power divider circuit and an output coupled to an output combining node. The power amplifier further includes an impedance inverter circuit coupling the output of the base amplifier to the output combining node and a load matching circuit having an input coupled to the output combining node and an output configured to be coupled to a load.
Abstract translation: 微波集成电路在衬底上包括衬底和功率放大器。 功率放大器包括功率分配器电路，其具有被配置为接收输入RF信号的输入，具有耦合到功率分配器电路的第一输出的输入的基极放大器和具有耦合到功率的第二输出的输入的峰化放大器 分频器电路和耦合到输出组合节点的输出。 功率放大器还包括将基极放大器的输出耦合到输出组合节点的阻抗反相器电路和具有耦合到输出组合节点的输入的负载匹配电路和被配置为耦合到负载的输出。
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公开(公告)号：US09565642B2
公开(公告)日：2017-02-07
申请号：US14251112
申请日：2014-04-11
Applicant: Cree, Inc.
Inventor： William Pribble , Simon Wood , James W. Milligan
IPC: H01Q11/12 , H04B1/04 , H04W52/24 , H04B1/3805 , H04B17/10
CPC classification number: H04W52/241 , H04B1/0458 , H04B1/3805 , H04B17/102 , H04B2001/0416
Abstract: A gallium nitride (GaN) radio frequency integrated circuit (RFIC) is configured to receive and amplify a low-level WiFi signal to generate a WiFi transmit signal. By using a GaN RFIC, the performance of the RFIC is significantly improved when compared to conventional RFICs for WiFi signals. In one exemplary embodiment, the RFIC has an error vector magnitude less than 29 dBc, an average power output around 29 dBm, and an average power added efficiency of greater than 25%. In additional embodiments, the RFIC has a gain greater than about 32 dB and a peak output power around −37 dB.
Abstract translation: 氮化镓（GaN）射频集成电路（RFIC）被配置为接收和放大低级WiFi信号以产生WiFi传输信号。 通过使用GaN RFIC，与用于WiFi信号的常规RFIC相比，RFIC的性能显着提高。 在一个示例性实施例中，RFIC具有小于29dBc的误差矢量幅度，大约29dBm的平均功率输出和大于25％的平均功率附加效率。 在另外的实施例中，RFIC具有大于约32dB的增益和约-37dB的峰值输出功率。
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公开(公告)号：US20150002227A1
公开(公告)日：2015-01-01
申请号：US13930544
申请日：2013-06-28
Applicant: Cree, Inc.
Inventor： William Pribble , James Milligan , Simon Wood
CPC classification number: H03F3/195 , H03F1/0288 , H03F1/56 , H03F3/245 , H03F2200/387 , H03H7/383
Abstract: A microwave integrated circuit includes a substrate and a power amplifier on the substrate. The power amplifier includes a power divider circuit having an input configured to receive an input RF signal, a base amplifier having an input coupled to a first output of the power divider circuit and a peaking amplifier having an input coupled to a second output of the power divider circuit and an output coupled to an output combining node. The power amplifier further includes an impedance inverter circuit coupling the output of the base amplifier to the output combining node and a load matching circuit having an input coupled to the output combining node and an output configured to be coupled to a load.
Abstract translation: 微波集成电路在衬底上包括衬底和功率放大器。 功率放大器包括功率分配器电路，其具有被配置为接收输入RF信号的输入，具有耦合到功率分配器电路的第一输出的输入的基极放大器和具有耦合到功率的第二输出的输入的峰化放大器 分频器电路和耦合到输出组合节点的输出。 功率放大器还包括将基极放大器的输出耦合到输出组合节点的阻抗反相器电路和具有耦合到输出组合节点的输入的负载匹配电路和被配置为耦合到负载的输出。
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