公开(公告)号：US08125082B2

公开(公告)日：2012-02-28

申请号：US12120854

申请日：2008-05-15

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christopher Detavernier ,  James M. Harper ,  Christian Lavoie

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christopher Detavernier ,  James M. Harper ,  Christian Lavoie

IPC分类号： H01L29/161

CPC分类号： H01L21/28518

摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

摘要翻译： 提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。 硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。 接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。 至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。 还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。

公开(公告)号：US07384868B2

公开(公告)日：2008-06-10

申请号：US10662900

申请日：2003-09-15

申请人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

发明人： Cyril Cabral, Jr. ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

IPC分类号： H01L21/44

CPC分类号： H01L21/28518

摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

摘要翻译： 提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。 硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。 接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。 至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。 还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。

公开(公告)号：US20080246120A1

公开(公告)日：2008-10-09

申请号：US12120854

申请日：2008-05-15

申请人： Cyril Cabral ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

发明人： Cyril Cabral ,  Roy A. Carruthers ,  Jia Chen ,  Christophe Detavernier ,  James M. Harper ,  Christian Lavoie

IPC分类号： H01L29/161

CPC分类号： H01L21/28518

摘要： A method that solves the increased nucleation temperature that is exhibited during the formation of cobalt disilicides in the presence of Ge atoms is provided. The reduction in silicide formation temperature is achieved by first providing a structure including a Co layer including at least Ni, as an additive element, on top of a SiGe containing substrate. Next, the structure is subjected to a self-aligned silicide process which includes a first anneal, a selective etching step and a second anneal to form a solid solution of (Co, Ni) disilicide on the SiGe containing substrate. The Co layer including at least Ni can comprise an alloy layer of Co and Ni, a stack of Ni/Co or a stack of Co/Ni. A semiconductor structure including the solid solution of (Co, Ni) disilicide on the SiGe containing substrate is also provided.

摘要翻译： 提供了一种解决在锗原子存在下形成二硅化钴期间显示的增加的成核温度的方法。 硅化物形成温度的降低通过首先提供包括至少包含Ni的Co层作为添加元素在包含SiGe的衬底的顶部上的结构来实现。 接下来，对该结构进行自对准硅化物工艺，其包括第一退火，选择性蚀刻步骤和第二退火，以在含SiGe的衬底上形成（Co，Ni）二硅化物的固溶体。 至少包括Ni的Co层可以包括Co和Ni的合金层，Ni / Co的堆叠或Co / Ni的堆叠。 还提供了包含（Co，Ni）二硅化物在含SiGe的衬底上的固溶体的半导体结构。

公开(公告)号：US06444578B1

公开(公告)日：2002-09-03

申请号：US09791024

申请日：2001-02-21

申请人： Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  Kevin K. Chan ,  Guy M. Cohen ,  Kathryn Wilder Guarini ,  James M. Harper ,  Christian Lavoie ,  Paul M. Solomon

发明人： Cyril Cabral, Jr. ,  Roy Arthur Carruthers ,  Kevin K. Chan ,  Guy M. Cohen ,  Kathryn Wilder Guarini ,  James M. Harper ,  Christian Lavoie ,  Paul M. Solomon

IPC分类号： H01L2144

CPC分类号： H01L21/28518

摘要： The present invention relates to a method of reducing Si consumption during a self-aligned silicide process which employs a M—Si or M—Si—Ge alloy, where M is Co, Ni or CoNi and a blanket layer of Si. The present invention is particularly useful in minimizing Si consumption in shallow junction and thin silicon-on-insulator (SOI) electronic devices.

摘要翻译： 本发明涉及在采用M-Si或M-Si-Ge合金的自对准硅化物工艺中降低Si消耗的方法，其中M是Co，Ni或CoNi以及Si的覆盖层。 本发明特别可用于最大限度地减少浅结和薄绝缘体上硅（SOI）电子器件中的Si消耗。

公开(公告)号：US5401677A

公开(公告)日：1995-03-28

申请号：US173313

申请日：1993-12-23

申请人： Robert D. Bailey ,  Cyril Cabral, Jr. ,  Brian Cunningham ,  Hormazdyar M. Dalal ,  James M. Harper ,  Viraj Sardesai ,  Horatio S. Wildman ,  Thomas O. Williams

发明人： Robert D. Bailey ,  Cyril Cabral, Jr. ,  Brian Cunningham ,  Hormazdyar M. Dalal ,  James M. Harper ,  Viraj Sardesai ,  Horatio S. Wildman ,  Thomas O. Williams

IPC分类号： C23C14/16 ,  C23C14/58 ,  H01L21/285 ,  H01L21/44 ,  H01L21/48

CPC分类号： C23C14/165 ,  C23C14/58 ,  H01L21/28518 ,  Y10S438/906

摘要： An improved process for the formation of high quality, high yield platinum silicides on silicon wafers uses a post sputter platinum deposition and high vacuum bake to complete the first step of silicide reaction, resulting in Pt.sub.2 Si formation before sinter. This additional process step is then followed by a 500.degree. to 900.degree. C. sinter. The use of a high vacuum bake provides easy control of O.sub.2 and H.sub.2 O impurities. The vacuum bake can be done in any high vacuum tool. The bake temperatures range from 200.degree. to 450.degree. C. at 5.times.10.sup.-6 torr, with an in-situ bake time of 3 to 5 minutes or an ex-situ bake time of 10 to 30 minutes, depending on batch size or tool. A particular advantage of the process is that it can be performed in existing tools.

摘要翻译： 在硅晶片上形成高质量，高产量的铂硅化物的改进方法使用后溅镀铂沉积和高真空烘烤来完成硅化物反应的第一步骤，从而在烧结之前形成Pt 2 Si。 然后再加入500〜900℃的烧结体。 使用高真空烘烤可以方便地控制O2和H2O杂质。 真空烘烤可以在任何高真空工具中进行。 焙烧温度范围为200〜450℃，5×10 -6乇，原位烘烤时间为3〜5分钟，或者异位烘烤时间为10〜30分钟，这取决于批量或工具。 该过程的一个特别优点是可以在现有工具中执行。

公开(公告)号：US4250009A

公开(公告)日：1981-02-10

申请号：US40339

申请日：1979-05-18

申请人： Jerome J. Cuomo ,  Richard J. Gambino ,  James M. Harper ,  John D. Kupstis

发明人： Jerome J. Cuomo ,  Richard J. Gambino ,  James M. Harper ,  John D. Kupstis

IPC分类号： C23F4/00 ,  C23C14/34 ,  C23C14/46 ,  C23C15/00

CPC分类号： C23C14/46

摘要： An energetic particle beam is accelerated towards a sputtering target. The target is located at an angle to the path of the beam (although it need not be). The target material which is dislodged by the ion beam can be directed towards a substrate. The material is composed of atoms forming both positive and negative ions. The voltage difference between the target and the substrate can be adjusted to be positive or negative so that either positive ions or negative ions can be accelerated to the substrate by means of adjusting the target-substrate voltage difference. In addition, means can be provided for collecting electrons included with the ions moving towards and away from the target. Such means can comprise a grid located adjacent to the target. It is also possible that electrons can be collected by means of an electric field confining structure which permits the ions to pass through while the electrons are deflected. Techniques. used elsewhere to separate electrons from ions have included bending beams to fit through apertures and use of magnetic grids to deflect electrons differentially. In both cases, the degree of deflection of ions is far different because the mass of an ion is large relative to the mass of an electron which makes separation easy. The advantage here is that the sputter deposition makes it possible to deposit positive and negative ions alternately or in a desired graded mixture at an interface under gradually changing voltage control.

摘要翻译： 高能粒子束朝向溅射靶加速。 目标位于与梁的路径成一定角度（尽管不需要）。 通过离子束移动的目标材料可以被引向衬底。 该材料由形成正离子和负离子的原子组成。 可以将目标和衬底之间的电压差调整为正或负，以便通过调整目标衬底电压差来将正离子或负离子加速到衬底。 此外，可以提供用于收集包含在离开靶子和远离靶的离子中的电子的装置。 这种装置可以包括位于与目标相邻的网格。 也可以通过允许离子在电子被偏转的同时通过的电场约束结构来收集电子。 技巧 在其他地方使用离子分离电子的方法包括弯曲梁以适应穿孔，并使用磁栅来使电子差异化。 在这两种情况下，离子的偏转程度是非常不同的，因为离子的质量相对于电子的质量大，这使得分离变得容易。 这里的优点是，溅射沉积使得可以在逐渐变化的电压控制下交替地或者在期望的分级混合物在界面处沉积正离子和负离子。

公开(公告)号：US5771385A

公开(公告)日：1998-06-23

申请号：US623884

申请日：1996-03-29

申请人： James M. Harper

发明人： James M. Harper

IPC分类号： G06F11/36 ,  G06F9/44

CPC分类号： G06F11/362

摘要： In a computing system, debug flags for software development, testing, and debugging of a module of the operating system are retrieved and set. The module under development is provided with a debugging message handler and a lookup table of debugging flags. The table maps the debugging flags to memory locations containing the present state of the flags. A debugging message is generated at the application-level by a user desiring to monitor or alter the state of the debugging flags. The debugging message handler decodes the debugging message using the table, and the module reports or alters the debugging flag accordingly. In this manner, real-time program evaluation and control can be achieved without the conventional debugging software packages.

摘要翻译： 在计算系统中，检索和设置用于操作系统的模块的软件开发，测试和调试的调试标志。 正在开发的模块提供了调试消息处理程序和调试标志的查找表。 该表将调试标志映射到包含标志当前状态的存储单元。 用户希望监控或更改调试标志的状态，在应用层产生调试信息。 调试消息处理器使用该表解码调试消息，模块相应地报告或更改调试标志。 以这种方式，无需传统的调试软件包即可实现实时程序评估和控制。

公开(公告)号：US5832507A

公开(公告)日：1998-11-03

申请号：US626716

申请日：1996-04-01

申请人： James M. Harper ,  Brian Berliner

发明人： James M. Harper ,  Brian Berliner

IPC分类号： G06F13/14 ,  G06F9/44 ,  G06F9/45 ,  G06F12/00 ,  G06F17/30

CPC分类号： G06F17/30067 ,  G06F9/4448

摘要： A method and apparatus for converting ASCII path names to parsed path name structures provides downward compatibility so that program modules written for modern operating systems which provide parsed path name structure inputs may be run under older operating systems which provide ASCII path name inputs. The method includes, in its most basic form, the steps of converting the prefix and file name of an ASCII path name to a unicode string, then converting the unicode string to a parsed path structure. In a preferred embodiment of the invention, the method is implemented in compiled object code written in the "C" computer programming language. The object code defines a parsed path structure, allocates buffers for stack variables, creates various pointers for scanning and counting functions, determines whether or not Uniform Naming Convention is used for the ASCII path name, converts the ASCII code to a unicode string, and then via scanning and counting, converts the first two character spaces in the unicode string to unicode numbers which indicate total string length and prefix length, respectively, and converts every other backslash character within the unicode string to a unicode number which identifies the length of the name component of the string which follows that particular number.

摘要翻译： 用于将ASCII路径名转换为解析的路径名结构的方法和装置提供向下兼容性，使得为提供解析路径名结构输入的现代操作系统编写的程序模块可以在提供ASCII路径名输入的较旧操作系统下运行。 该方法在其最基本的形式中包括将ASCII路径名的前缀和文件名转换为unicode字符串的步骤，然后将unicode字符串转换为解析的路径结构。 在本发明的优选实施例中，该方法在以“C”计算机编程语言编写的编译对象代码中实现。 目标代码定义了解析的路径结构，为堆栈变量分配缓冲区，创建扫描和计数功能的各种指针，确定是否使用统一命名约定用于ASCII路径名称，将ASCII代码转换为Unicode代码字符串，然后 通过扫描和计数，将unicode字符串中的前两个字符空格分别转换为指示总字符串长度和前缀长度的unicode数字，并将unicode字符串中的每隔一个反斜杠字符转换为标识名称长度的unicode号 跟随该特定数字的字符串的分量。

公开(公告)号：US5701474A

公开(公告)日：1997-12-23

申请号：US622885

申请日：1996-03-29

申请人： James M. Harper

发明人： James M. Harper

IPC分类号： G06F9/06 ,  G06F12/00 ,  G06F17/30

CPC分类号： G06F17/30067 ,  Y10S707/99937 ,  Y10S707/99956

摘要： Handle-based finding operations for search operations in an operating system in a computing system are converted into non-handle-based finding operations. The invention is responsive to a program module performing search operations specifying a file search path and has a find first module, a find next module and a find close module. The find first module, in response to a find first call from the program module, locates a search block for use in storing file identification information for a first file in the file search path. The find first module marks the search block as "in use," generates a handle identifying the search block and passes the handle back to the program module. The find next module is responsive to a find next call containing the handle. The find next module converts the handle into a search block address and locates the search block from the search block address. The search block is used to store the file identification information for a next file in the file search path. The find close module is responsive to a find close call with handle from the program module. The find close module converts the handle into a search block address, locates the search block from the search block address and marks the search block "not in use" to close finding operations in the operating system.

摘要翻译： 计算系统中的操作系统中的搜索操作的基于句柄的查找操作被转换为非基于句柄的查找操作。 本发明响应于执行指定文件搜索路径的搜索操作的程序模块，并且具有查找第一模块，查找下一模块和查找关闭模块。 查找第一模块响应于来自程序模块的第一次调用，找到用于存储文件搜索路径中的第一文件的文件标识信息的搜索块。 查找第一个模块将搜索块标记为“正在使用”，生成一个标识搜索块的句柄，并将句柄传回给程序模块。 查找下一个模块响应于查找包含句柄的下一个调用。 查找下一个模块将句柄转换为搜索块地址，并从搜索块地址中找到搜索块。 搜索块用于存储文件搜索路径中的下一个文件的文件标识信息。 查找关闭模块响应于从程序模块找到具有句柄的紧密呼叫。 查找关闭模块将句柄转换为搜索块地址，从搜索块地址找到搜索块，并将搜索块标记为“未使用”，以关闭操作系统中的查找操作。