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    Self-aligned composite insulator with sub-half-micron multilevel high density electrical interconnections and process thereof
    3.
    发明授权
    Self-aligned composite insulator with sub-half-micron multilevel high density electrical interconnections and process thereof 失效
    具有亚半微米多电平高密度电互连的自对准复合绝缘子及其工艺

    公开(公告)号：US06294835B1

    公开(公告)日：2001-09-25

    申请号：US09365684

    申请日：1999-08-02

    申请人： Hormazdyar M. Dalal ,  Du Binh Nguyen ,  Hazara S. Rathore

    发明人： Hormazdyar M. Dalal ,  Du Binh Nguyen ,  Hazara S. Rathore

    IPC分类号： H01L2348

    CPC分类号： H01L23/5226 ,  H01L21/76801 ,  H01L21/76834 ,  H01L23/485 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention relates generally to a new sequence of methods and materials to improve the process yield and to enhance the reliability of multilevel interconnection with sub-half-micron geometry by making judicious use of composite insulators to prevent metal thinning over hard metal via plugs and by preventing process induced metal spike formation. The method takes advantage of the double damascene process. The metal spikes and the metal thinning resulting from over etch process is prevented in this method by using a pair of insulators which require different chemistries for etching.

    摘要翻译： 本发明一般涉及新的顺序的方法和材料，以通过明智地使用复合绝缘体来防止金属通过插塞硬化金属稀化，从而提高工艺产量并提高具有亚半微米几何尺寸的多层互连的可靠性，以及 通过防止工艺诱发的金属尖峰形成。 该方法利用双镶嵌工艺。 在这种方法中通过使用一对需要不同化学蚀刻的绝缘体来防止金属尖峰和由过度蚀刻工艺引起的金属变薄。

    Refractory metal capped low resistivity metal conductor lines and vias
    6.
    发明授权
    Refractory metal capped low resistivity metal conductor lines and vias 失效
    耐火金属封盖的低电阻金属导线和通孔

    公开(公告)号：US5300813A

    公开(公告)日：1994-04-05

    申请号：US841967

    申请日：1992-02-26

    申请人： Rajiv V. Joshi ,  Jerome J. Cuomo ,  Hormazdyar M. Dalal ,  Louis L. Hsu

    发明人： Rajiv V. Joshi ,  Jerome J. Cuomo ,  Hormazdyar M. Dalal ,  Louis L. Hsu

    IPC分类号： H01L21/28 ,  H01L21/312 ,  H01L21/316 ,  H01L21/318 ,  H01L21/768 ,  H01L23/498 ,  H01L23/522 ,  H01L23/532 ,  H01L29/440 ,  H01L29/460

    CPC分类号： H01L21/76843 ,  H01L21/76838 ,  H01L21/7684 ,  H01L21/76847 ,  H01L21/76849 ,  H01L21/76852 ,  H01L21/76877 ,  H01L23/49866 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53233 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/09701 ,  Y10S148/015 ,  Y10S257/915 ,  Y10S438/959

    摘要： A contact structure for a semiconductor device having a first refractory metal layer formed only at the bottom of a contact hole. The first refractory metal is selected from a group comprising titanium (Ti), titanium alloys or compounds such as Ti/TiN, tungsten (W), titanium/tungsten (Ti/W) alloys, or chromium (Cr) or tantalum (Ta) and their alloys or some other suitable material. A low resistivity layer comprising a single, binary or ternary metalization is deposited over the first refractory metal layer in the contact hole by a method such as PVD using evaporation or collimated sputtering. The low resistivity layer has side walls which taper inwardly toward one another with increasing height of the layer and the low resistivity layer does not contact the side walls of the contact hole. The low resistivity layer may be Al.sub.x Cu.sub.y (x+y=1; x.gtoreq.0, y.gtoreq.0), ternary alloys such as Al-Pd-Cu or multicomponent alloys such as Al-Pd-Nb-Au. A second refractory metal layer is deposited over the low resistivity layer. The second refractory metal layer may be tungsten, cobalt, nickel, molybdenum or alloys/compounds such as Ti/TiN. The first and second refractory metal layers completely encapsulate the low resistivity layer. The first and second refractory metal layers can comprise an alloy containing silicon with a higher incorporated silicon content near the top of the contact hold present as a distinct or graded composition than at a location closer to the bottom of the contact hole.

    摘要翻译： 一种用于半导体器件的接触结构，其具有仅在接触孔的底部形成的第一难熔金属层。 第一难熔金属选自钛（Ti），钛合金或Ti / TiN，钨（W），钛/钨（Ti / W）合金或铬（Cr）或钽（Ta） 及其合金或其他合适的材料。 包含单一二元或三元金属化的低电阻率层通过诸如使用蒸发或准直溅射的PVD的方法沉积在接触孔中的第一难熔金属层上。 低电阻率层具有随着层的高度逐渐向内逐渐向内逐渐变细的侧壁，低电阻层不接触接触孔的侧壁。 低电阻率层可以是AlxCuy（x + y = 1; x> = 0，y> = 0），诸如Al-Pd-Cu的三元合金或诸如Al-Pd-Nb-Au的多组分合金。 在低电阻率层上沉积第二难熔金属层。 第二耐火金属层可以是钨，钴，镍，钼或诸如Ti / TiN的合金/化合物。 第一和第二难熔金属层完全封装低电阻率层。 第一和第二难熔金属层可以包含含有硅的合金，其中接合保持层的顶部附近具有更高的掺入硅含量，作为不同或分级的组成，而不是靠近接触孔底部的位置。