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公开(公告)号:US09634224B2
公开(公告)日:2017-04-25
申请号:US14600962
申请日:2015-01-20
申请人: D-Wave Systems Inc.
CPC分类号: H01L39/2493 , H01L27/18 , H01L39/223
摘要: In one aspect, fabricating a superconductive integrated circuit with a Josephson junction includes applying oxygen or nitrogen to at least part of a structure formed from an outer superconductive layer to passivate an artifact, if any, left from removing the portion of the outer superconductive layer. In another aspect, a first superconductive layer is deposited, a second superconductive layer is deposited on the first superconductive layer, an oxide layer is formed on the first superconductive layer, a dielectric layer is deposited on the oxide layer, a portion of the dielectric layer is removed, a first portion of the oxide layer is removed, a second oxide portion is formed in place of the first portion of the oxide layer, and a third superconductive layer is deposited on the dielectric layer and the second oxide portion.
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公开(公告)号:US20150236235A1
公开(公告)日:2015-08-20
申请号:US14600962
申请日:2015-01-20
申请人: D-Wave Systems Inc.
CPC分类号: H01L39/2493 , H01L27/18 , H01L39/223
摘要: In one aspect, fabricating a superconductive integrated circuit with a Josephson junction includes applying oxygen or nitrogen to at least part of a structure formed from an outer superconductive layer to passivate an artifact, if any, left from removing the portion of the outer superconductive layer. In another aspect, a first superconductive layer is deposited, a second superconductive layer is deposited on the first superconductive layer, an oxide layer is formed on the first superconductive layer, a dielectric layer is deposited on the oxide layer, a portion of the dielectric layer is removed, a first portion of the oxide layer is removed, a second oxide portion is formed in place of the first portion of the oxide layer, and a third superconductive layer is deposited on the dielectric layer and the second oxide portion.
摘要翻译: 一方面,制造具有约瑟夫逊结的超导集成电路包括将氧或氮施加到由外部超导层形成的结构的至少一部分,以钝化去除外部超导层的部分留下的伪影(如果有的话)。 在另一方面,沉积第一超导层,在第一超导层上沉积第二超导层,在第一超导层上形成氧化物层,在氧化物层上沉积介电层,介电层的一部分 ,去除氧化物层的第一部分,形成第二氧化物部分代替氧化物层的第一部分,并且在介电层和第二氧化物部分上沉积第三超导层。
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