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公开(公告)号：US20180321582A1
公开(公告)日：2018-11-08
申请号：US16033596
申请日：2018-07-12
IPC分类号： G03F1/72 , G03F1/30 , G03F1/44 , G03F1/28 , G03F1/80 , G03F1/38 , G03F1/00 , G03F1/36 , G03F1/32
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
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公开(公告)号：US20190332006A1
公开(公告)日：2019-10-31
申请号：US16508917
申请日：2019-07-11
IPC分类号： G03F1/72 , G03F1/30 , G03F1/44 , G03F1/28 , G03F1/80 , G03F1/00 , G03F1/36 , G03F1/32 , G03F1/38
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the as pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
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公开(公告)号：US20170075213A1
公开(公告)日：2017-03-16
申请号：US15341480
申请日：2016-11-02
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模，不能解决辅助图案，而 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是包含主图案的光掩模，该主图案通过投影曝光被转印到转印目标表面，辅助图案形成在主图案附近而不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。
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公开(公告)号：US20150140480A1
公开(公告)日：2015-05-21
申请号：US14607541
申请日：2015-01-28
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模，不能解决辅助图案，而 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是包含主图案的光掩模，该主图案通过投影曝光被转印到转印目标表面，辅助图案形成在主图案附近而不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。
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