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公开(公告)号：US20170023855A1
公开(公告)日：2017-01-26
申请号：US15284098
申请日：2016-10-03
发明人： Yukio INAZUKI , Takashi YOSHII , Toyohisa SAKURADA , Akira IKEDA , Hideo KANEKO , Satoshi WATANABE , Yoshio KAWAI
IPC分类号： G03F1/26
CPC分类号： G03F1/26 , G03F1/0046 , G03F1/0076 , G03F1/32 , G03F1/38 , G03F1/50
摘要： A method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate includes forming the silicon-containing inorganic film such that a surface has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent, the silicon-containing inorganic film being an SiO film or an SiON film and serving as a hard mask film.
摘要翻译： 制造在透明基板上具有至少含硅无机膜的光掩模坯料的方法包括：形成含硅无机膜，使得表面的氧浓度不低于55原子％且不大于75原子％ 该含硅无机膜是SiO膜或SiON膜，用作硬掩模膜。
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2.发明授权Halftone phase shift photomask blank, halftone phase shift photomask and pattern exposure method 有权半色调相移光掩模坯料，半色调相移光掩模和图案曝光方法公开(公告)号：US09366951B2
公开(公告)日：2016-06-14
申请号：US14520415
申请日：2014-10-22
CPC分类号： G03F1/26 , G03F1/0046 , G03F1/0076 , G03F1/32 , G03F7/2002
摘要： A halftone phase shift photomask blank comprising a transparent substrate and a halftone phase shift film is provided. The phase shift film consists of Si and N, or Si, N and O, and is free of transition metals. The phase shift film has a thickness of 40-70 nm, offers a transmittance of 10-40% and a phase shift of 150-200° relative to light of wavelength up to 200 nm, and is resistant to cleaning chemicals.
摘要翻译： 提供了包括透明基板和半色调相移膜的半色调相移光掩模坯料。 相移膜由Si和N，或Si，N和O组成，不含过渡金属。 相移膜的厚度为40-70nm，相对于波长高达200nm的光，其透光率为10-40％，相位为150-200°，耐清洁化学品。
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公开(公告)号：US08974987B2
公开(公告)日：2015-03-10
申请号：US13147634
申请日：2010-02-04
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模，不能解决辅助图案，而 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是包含主图案的光掩模，该主图案通过投影曝光被转印到转印目标表面，辅助图案形成在主图案附近而不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。
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4.发明申请公开(公告)号：US20180210331A1
公开(公告)日：2018-07-26
申请号：US15743783
申请日：2016-07-11
申请人： HOYA CORPORATION
IPC分类号： G03F1/32 , G03F1/00 , G03F1/80 , G03F1/82 , H01L21/033
CPC分类号： G03F1/32 , G03F1/0076 , G03F1/54 , G03F1/58 , G03F1/80 , G03F1/82 , H01L21/0337
摘要： An object is to provide a mask blank for manufacturing a phase shift mask in which a thermal expansion of a phase shift pattern, which is caused when exposure light is radiated onto the phase shift pattern, and displacement of the phase shift pattern are suppressed to be small. A phase shift film has a function of transmitting exposure light from an ArF excimer laser at a transmittance of 2% or higher and 30% or lower and a function of generating a phase difference of 150° or larger and 180° or smaller between the exposure light that has been transmitted through the phase shift film and the exposure light that has passed through air by a distance equal to a thickness of the phase shift film. The phase shift film is formed of a material containing a metal and silicon, and has a structure in which a lower layer and an upper layer are laminated in the stated order from a transparent substrate side. The lower layer has a refractive index n at a wavelength of the exposure light that is smaller than that of the transparent substrate. The upper layer has a refractive index n at the wavelength of the exposure light that is larger than that of the transparent substrate. The lower layer has an extinction coefficient k at the wavelength of the exposure light that is larger than that of the upper layer. The upper layer has a thickness that is larger than that of the lower layer.
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公开(公告)号：US09519211B2
公开(公告)日：2016-12-13
申请号：US14607541
申请日：2015-01-28
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
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公开(公告)号：US09488906B2
公开(公告)日：2016-11-08
申请号：US14489019
申请日：2014-09-17
发明人： Yukio Inazuki , Takashi Yoshii , Toyohisa Sakurada , Akira Ikeda , Hideo Kaneko , Satoshi Watanabe , Yoshio Kawai
CPC分类号： G03F1/26 , G03F1/0046 , G03F1/0076 , G03F1/32 , G03F1/38 , G03F1/50
摘要： The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the silicon-containing inorganic film, comprising: forming the silicon-containing inorganic film such that a surface that will contact the resist film has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent; performing a silylation process after forming the silicon-containing inorganic film; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development.
摘要翻译： 本发明涉及通过在含硅无机膜上进行甲硅烷基化处理后形成抗蚀膜而获得的光掩模坯料，并且提供一种在透明基板上至少含有含硅无机膜的光掩模坯料的制造方法， 在含硅无机膜上形成抗蚀膜，其特征在于，包括：形成所述含硅无机膜，使得与所述抗蚀剂膜接触的表面的氧浓度不低于55原子％且不大于75原子％ 在形成含硅无机膜之后进行甲硅烷基化处理; 然后通过涂布形成抗蚀剂膜。 该方法可以抑制由于显影后的抗蚀剂残留物等引起的缺陷的产生。
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公开(公告)号：US20110294045A1
公开(公告)日：2011-12-01
申请号：US13147634
申请日：2010-02-04
IPC分类号： G03F1/14
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模，不能解决辅助图案，而 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是包含主图案的光掩模，该主图案通过投影曝光被转印到转印目标表面，辅助图案形成在主图案附近而不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。
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公开(公告)号：US20180321582A1
公开(公告)日：2018-11-08
申请号：US16033596
申请日：2018-07-12
IPC分类号： G03F1/72 , G03F1/30 , G03F1/44 , G03F1/28 , G03F1/80 , G03F1/38 , G03F1/00 , G03F1/36 , G03F1/32
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
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公开(公告)号：US09709885B2
公开(公告)日：2017-07-18
申请号：US15284098
申请日：2016-10-03
发明人： Yukio Inazuki , Takashi Yoshii , Toyohisa Sakurada , Akira Ikeda , Hideo Kaneko , Satoshi Watanabe , Yoshio Kawai
CPC分类号： G03F1/26 , G03F1/0046 , G03F1/0076 , G03F1/32 , G03F1/38 , G03F1/50
摘要： A method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate includes forming the silicon-containing inorganic film such that a surface has an oxygen concentration not less than 55 atomic percent and not more than 75 atomic percent, the silicon-containing inorganic film being an SiO film or an SiON film and serving as a hard mask film.
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公开(公告)号：US20150086909A1
公开(公告)日：2015-03-26
申请号：US14489229
申请日：2014-09-17
发明人： Takashi YOSHII , Yoshio KAWAI , Yukio INAZUKI , Satoshi WATANABE , Akira IKEDA , Toyohisa SAKURADA , Hideo KANEKO
IPC分类号： G03F1/50
CPC分类号： G03F1/26 , G03F1/0046 , G03F1/0076 , G03F1/32 , G03F1/50
摘要： The present invention relates to a photomask blank obtained by forming a resist film after performing a silylation process on a silicon-containing inorganic film and provides a method for manufacturing a photomask blank having at least a silicon-containing inorganic film over a transparent substrate and a resist film on the inorganic film, comprising: forming the silicon-containing inorganic film; heat treating the formed silicon-containing inorganic film at a temperature more than 200° C. under an atmosphere containing oxygen; performing a silylation process after the heat treatment; and then forming the resist film by application. The method can inhibit generation of defects due to resist residues or the like after development.
摘要翻译： 本发明涉及通过在含硅无机膜上进行甲硅烷基化处理后形成抗蚀膜而获得的光掩模坯料，并且提供一种在透明基板上至少含有含硅无机膜的光掩模坯料的制造方法， 在所述无机膜上具有抗蚀剂膜，其包含：形成所述含硅无机膜; 在含氧气氛下，在高于200℃的温度下热处理形成的含硅无机膜; 在热处理后进行甲硅烷基化处理; 然后通过涂布形成抗蚀剂膜。 该方法可以抑制由于显影后的抗蚀剂残留物等引起的缺陷的产生。
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