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公开(公告)号：US20190384169A1
公开(公告)日：2019-12-19
申请号：US16543718
申请日：2019-08-19
发明人： Takaharu NAGAI , Yuichi INAZUKI , Katsutoshi SUZUKI , Ryugo HIKICHI , Koji ICHIMURA , Saburou HARADA
摘要： An imprint method using a mold and/or a transfer substrate having a mesa structure includes a resin supply step, a contact step, a curing step, and a mold release step. In the resin supply step, a balance layer is formed by supplying a molded resin also to an area outside of a pattern formation area of the transfer substrate in which a pattern structure is to be formed.
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公开(公告)号：US20220236642A1
公开(公告)日：2022-07-28
申请号：US17722608
申请日：2022-04-18
IPC分类号： G03F7/00 , B29C33/42 , B29C33/38 , B29C59/00 , H01L21/027
摘要： A template and a template blank are used for imprint lithography transferring a transfer pattern in a concave and convex structure to a resin on a transfer substrate, in which a first step structure is formed on a main surface of a base, a second step structure is formed on the first step structure, and an outside region of the second step structure on an upper surface of the first step structure is covered with a light shielding film to solve the above problem.
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公开(公告)号：US20180321582A1
公开(公告)日：2018-11-08
申请号：US16033596
申请日：2018-07-12
IPC分类号： G03F1/72 , G03F1/30 , G03F1/44 , G03F1/28 , G03F1/80 , G03F1/38 , G03F1/00 , G03F1/36 , G03F1/32
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
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公开(公告)号：US20190332006A1
公开(公告)日：2019-10-31
申请号：US16508917
申请日：2019-07-11
IPC分类号： G03F1/72 , G03F1/30 , G03F1/44 , G03F1/28 , G03F1/80 , G03F1/00 , G03F1/36 , G03F1/32 , G03F1/38
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the as pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
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公开(公告)号：US20190086798A1
公开(公告)日：2019-03-21
申请号：US16304264
申请日：2017-05-24
IPC分类号： G03F7/00 , B29C33/38 , B29C59/00 , H01L21/027
摘要： A template and a template blank are used for imprint lithography transferring a transfer pattern in a concave and convex structure to a resin on a transfer substrate, in which a first step structure is formed on a main surface of a base, a second step structure is formed on the first step structure, and an outside region of the second step structure on an upper surface of the first step structure is covered with a light shielding film to solve the above problem.
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公开(公告)号：US20190210269A1
公开(公告)日：2019-07-11
申请号：US16356710
申请日：2019-03-18
发明人： Hirokazu ODA , Takaharu NAGAI , Saburou HARADA
CPC分类号： B29C59/002 , B29C59/022 , B29C59/026 , G03F7/0002
摘要： Provided are: an imprinting method which suppresses volatilization of a photocurable resin applied on a transfer-receiving substrate by an inkjet method, satisfactorily maintains the wet-spreading property of the resin at the time of transfer, maintains cleanness of the environment for transfer, and can fill the environment for transfer with a particular gas appropriate for transfer; and an imprinting apparatus. Disclosed is an imprinting method of using a template having a concavo-convex pattern formed thereon, and transferring the pattern of the template by imprinting to a photocurable resin on a transfer-receiving substrate, characterized in that, in a space where the template and the photocurable resin are brought into contact, clean air is sent to the space through an air blowing port during a standby mode of not performing imprinting, and the flow rate of clean air in the space is reduced or clean air is not sent during an imprinting mode.
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公开(公告)号：US20170235221A1
公开(公告)日：2017-08-17
申请号：US15501568
申请日：2015-03-11
发明人： Takaharu NAGAI , Yuichi INAZUKI , Katsutoshi SUZUKI , Ryugo HIKICHI , Koji ICHIMURA , Saburou HARADA
CPC分类号： G03F7/0002 , B29C35/0805 , B29C59/022 , B29C59/026 , B29C2035/0827 , H01L21/027
摘要： An imprint method using a mold and/or a transfer substrate having a mesa structure includes a resin supply step, a contact step, a curing step, and a mold release step. In the resin supply step, a balance layer is formed by supplying a molded resin also to an area outside of a pattern formation area of the transfer substrate in which a pattern structure is to be formed.
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公开(公告)号：US20170106408A1
公开(公告)日：2017-04-20
申请号：US15128323
申请日：2014-10-22
发明人： Naoko NAKATA , Kouji YOSHIDA , Naoshi KAWAMATA , Takaharu NAGAI , Koji ICHIMURA
CPC分类号： B05D3/12 , B05D3/067 , B29C59/02 , G03F7/0002 , H01L21/027
摘要： An imprint mold has a base 2, an uneven structure area A set on a surface 2a of the base 2, a measurement area 6 set in the uneven structure area A, and a measurement mark structure 7 positioned in the measurement area 6, the measurement mark structure 7 having a plurality of pattern sets 7a each having a line/space shape. With this, a deformation occurring in a resin layer at the time of release of the resin layer from the mold is prevented, and a measurement mark can be formed with high accuracy.
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公开(公告)号：US20170075213A1
公开(公告)日：2017-03-16
申请号：US15341480
申请日：2016-11-02
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模，不能解决辅助图案，而 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是包含主图案的光掩模，该主图案通过投影曝光被转印到转印目标表面，辅助图案形成在主图案附近而不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。
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公开(公告)号：US20150140480A1
公开(公告)日：2015-05-21
申请号：US14607541
申请日：2015-01-28
CPC分类号： G03F1/72 , G03F1/0076 , G03F1/0092 , G03F1/144 , G03F1/28 , G03F1/30 , G03F1/32 , G03F1/36 , G03F1/38 , G03F1/44 , G03F1/80
摘要： The present invention provides a halftone mask comprising an assist pattern and a manufacturing method of the halftone mask, which uses an ArF excimer laser as an exposing source, is used for a projection exposure by an off axis illumination, does not resolve the assist pattern while keeping the focal depth magnification effect as the assist pattern, and may form a transferred image having high contrast of a main pattern. A photomask is a photomask comprising the main pattern which is transferred to a transfer-target surface by the projection exposure and the assist pattern which is formed nearby the main pattern and not transferred, characterized in that the main pattern and the assist pattern are each constituted from a semi-transparent film made of the same material, a retardation of 180° is generated between the light transmitting through the main pattern and the light transmitting through a transparent region of a transparent substrate, and a predetermined retardation within the scope of 70° to 115° is generated between the light transmitting through the assist pattern and the light transmitting through the transparent region of the transparent substrate.
摘要翻译： 本发明提供了一种使用ArF准分子激光器作为曝光源的辅助图形和半色调掩模的制造方法用于通过离轴照明的投影曝光的半色调掩模，不能解决辅助图案，而 保持焦点深度放大效果作为辅助图案，并且可以形成具有主图案的高对比度的转印图像。 光掩模是包含主图案的光掩模，该主图案通过投影曝光被转印到转印目标表面，辅助图案形成在主图案附近而不被转印，其特征在于，主图案和辅助图案各自构成 从由相同材料制成的半透明膜，通过主图案透射的光和透过透明基板的透明区域的光之间产生180°的延迟，在70°的范围内产生预定的延迟 在通过辅助图案透射的光和透过透明基板的透明区域的光之间产生115°。
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