公开(公告)号：US20190341483A1

公开(公告)日：2019-11-07

申请号：US16513047

申请日：2019-07-16

Applicant: DENSO CORPORATION

Inventor： Syunsuke HARADA ,  Hisato KATO

IPC: H01L29/78 ,  H01L29/08 ,  H01L29/417 ,  H01L29/06 ,  H01L29/423 ,  H01L29/10 ,  G01R19/10

Abstract: A semiconductor device is provided on a semiconductor substrate and has a main element of a gate driven type and a sensing element for current detection disposed across an isolation region. In a configuration in a forming region of the sensing element formed on the semiconductor substrate, at least a part of a resistance component contributing to a resistance of the sensing element has a resistance value higher than a resistance value of an equivalent configuration part of a resistance component contributing to a resistance of the main element.

公开(公告)号：US20140225234A1

公开(公告)日：2014-08-14

申请号：US14258082

申请日：2014-04-22

Applicant: DENSO CORPORATION

Inventor： Takao YAMAMOTO ,  Norihito TOKURA ,  Hisato KATO ,  Akio NAKAGAWA

IPC: H01L29/868

CPC classification number: H01L29/868 ,  H01L27/0664 ,  H01L29/0615 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7394 ,  H01L29/7824

Abstract: A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.

Abstract translation: 具有横向二极管的半导体器件包括半导体层，半导体层中的第一半导体区域，具有大于第一半导体区域的杂质浓度的杂质浓度的接触区域，位于半导体层中并与该半导体层分离的第二半导体区域 接触区域，通过接触区域电连接到第一半导体区域的第一电极和与第二半导体区域电连接的第二电极。 第二半导体区域包括低杂质浓度部分，高杂质浓度部分和延伸部分。 第二电极与高杂质浓度部分形成欧姆接触。 延伸部分的杂质浓度大于低杂质浓度部分的杂质浓度，并且在半导体层的厚度方向上延伸。