公开(公告)号：US20230391298A1

公开(公告)日：2023-12-07

申请号：US18451492

申请日：2023-08-17

Applicant: DENSO CORPORATION

Inventor： Yasuhisa FUKUDA ,  Etsugo YANAGIDA ,  Daisuke HOKUTO ,  Takao YAMAMOTO

IPC: B60T7/04

CPC classification number: B60T7/04

Abstract: An arm includes an arm one end and an arm body extended from the arm one end. The arm is coupled with a pedal pad at the arm one end and is coupled with a reaction force generation mechanism on an counter-operation side. A stopper part is a component separate from the pedal pad and fixed to the pedal pad. One part, which is one of the pedal pad and the stopper part, includes a first arrangement section, and the other part, which is the other of the pedal pad and the stopper part, includes a second arrangement section. The first arrangement section and the second arrangement section interpose the arm one end therebetween and hold the arm one end against the pedal pad.

公开(公告)号：US20230393607A1

公开(公告)日：2023-12-07

申请号：US18454630

申请日：2023-08-23

Applicant: DENSO CORPORATION

Inventor： Takao YAMAMOTO ,  Daisuke HOKUTO ,  Etsugo YANAGIDA ,  Yasuhisa FUKUDA

IPC: G05G5/04 ,  G05G1/38 ,  G05G1/44 ,  G05G5/05

CPC classification number: G05G5/04 ,  G05G1/38 ,  G05G1/44 ,  G05G5/05 ,  B60K26/02

Abstract: An organ-type pedal device includes a housing attached to a vehicle body. A pedal pad of the pedal device is provided rotatably about a predetermined rotation axis with respect to the housing, and a stepped portion of the pedal pad is arranged above the rotation axis in a vertical direction of the vehicle. The pedal pad rotates in a forward direction in accordance with an increase of a pedaling force of the driver, and rotates in a backward direction in accordance with a decrease of the pedaling force of the driver. A sensor unit outputs an electric signal corresponding to a rotation angle of the pedal pad. A full-close stopper comes in contact with a lower part of the pedal pad with respect to the rotation axis, and prevents the pedal pad from rotating in the backward direction when the pedaling force of the driver is not applied thereto.

公开(公告)号：US20230393606A1

公开(公告)日：2023-12-07

申请号：US18452360

申请日：2023-08-18

Applicant: DENSO CORPORATION

Inventor： Yasuhisa FUKUDA ,  Etsugo YANAGIDA ,  Daisuke HOKUTO ,  Takao YAMAMOTO

IPC: G05G5/03 ,  G05G1/44 ,  G05G5/05

CPC classification number: G05G5/03 ,  B60T7/042 ,  G05G5/05 ,  G05G1/44

Abstract: A pedal device mounted on a vehicle includes a housing, a pedal pad, and a reaction force generation mechanism. The housing is mounted on a vehicle body. The pedal pad is provided to be rotatable with respect to the housing. The reaction force generation mechanism is configured to include a plurality of resilient members each having a predetermined leaf spring. The reaction force generation mechanism is arranged in a space on the side opposite to a surface stepped on by a driver in the pedal pad to generate a reaction force against a pedaling force applied to the pedal pad by the driver.

公开(公告)号：US20140225234A1

公开(公告)日：2014-08-14

申请号：US14258082

申请日：2014-04-22

Applicant: DENSO CORPORATION

Inventor： Takao YAMAMOTO ,  Norihito TOKURA ,  Hisato KATO ,  Akio NAKAGAWA

IPC: H01L29/868

CPC classification number: H01L29/868 ,  H01L27/0664 ,  H01L29/0615 ,  H01L29/0692 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7394 ,  H01L29/7824

Abstract: A semiconductor device having a lateral diode includes a semiconductor layer, a first semiconductor region in the semiconductor layer, a contact region having an impurity concentration greater than that of the first semiconductor region, a second semiconductor region located in the semiconductor layer and separated from the contact region, a first electrode electrically connected through the contact region to the first semiconductor region, and a second electrode electrically connected to the second semiconductor region. The second semiconductor region includes a low impurity concentration portion, a high impurity concentration portion, and an extension portion. The second electrode forms an ohmic contact with the high impurity concentration portion. The extension portion has an impurity concentration greater than that of the low impurity concentration portion and extends in a thickness direction of the semiconductor layer.

Abstract translation: 具有横向二极管的半导体器件包括半导体层，半导体层中的第一半导体区域，具有大于第一半导体区域的杂质浓度的杂质浓度的接触区域，位于半导体层中并与该半导体层分离的第二半导体区域 接触区域，通过接触区域电连接到第一半导体区域的第一电极和与第二半导体区域电连接的第二电极。 第二半导体区域包括低杂质浓度部分，高杂质浓度部分和延伸部分。 第二电极与高杂质浓度部分形成欧姆接触。 延伸部分的杂质浓度大于低杂质浓度部分的杂质浓度，并且在半导体层的厚度方向上延伸。