公开(公告)号：US20160202132A1

公开(公告)日：2016-07-14

申请号：US14913067

申请日：2014-07-30

Applicant: DENSO CORPORATION

Inventor： Takashi INOUE ,  Kensuke HATA ,  Tetsuya KATOH ,  Kenichi SAKAI ,  Mayumi UNO ,  Junichi TAKEYA

IPC: G01L1/22 ,  H01L51/05

CPC classification number: G01L1/2293 ,  G01L1/18 ,  H01L29/22 ,  H01L29/84 ,  H01L51/057

Abstract: A load sensor is constituted by a rib and a vertical transistor including an organic semiconductor film, and a load measurement can be executed based on a change of a gap between a drain electrode and a source electrode which is a channel length of the vertical transistor. Therefore, a change of a current Ids is in a linear relationship to a load applied to the load sensor.

Abstract translation: 负载传感器由肋和包括有机半导体膜的垂直晶体管构成，并且可以基于作为垂直晶体管的沟道长度的漏电极和源电极之间的间隙的变化来执行负载测量。 因此，电流Ids的改变与施加到负载传感器的负载成线性关系。