公开(公告)号：US20230074595A1

公开(公告)日：2023-03-09

申请号：US17889350

申请日：2022-08-16

Applicant: FUJI ELECTRIC CO., LTD. ,  DENSO Corporation

Inventor： Masayuki MIYAZAKI ,  Taketo TSUJI ,  Makoto TERAKAWA ,  Kensuke HATA ,  Tomohiro MIMURA

IPC: G01N21/95 ,  H01L21/66

Abstract: Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulating film above the semiconductor substrate; forming a metal electrode above the interlayer insulating film; acquiring an image of the metal electrode and detecting defect candidates on a surface of the metal electrode based on the image; and performing inspection by determining a quality of the semiconductor device, based on height information of each of the detected defect candidates in a direction perpendicular to the surface of the metal electrode.

公开(公告)号：US20240290616A1

公开(公告)日：2024-08-29

申请号：US18435035

申请日：2024-02-07

Applicant: DENSO CORPORATION ,  FUJI ELECTRIC CO., LTD.

Inventor： Tomohiro MIMURA ,  Kensuke HATA ,  Masanobu IWAYA

IPC: H01L21/04 ,  H01L23/34 ,  H01L29/06 ,  H01L29/16 ,  H01L29/34 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L21/045 ,  H01L21/046 ,  H01L23/34 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/34 ,  H01L29/66068 ,  H01L29/7811 ,  H01L29/7813

Abstract: A silicon carbide semiconductor device has a semiconductor substrate, a trench gate structure disposed in the semiconductor substrate, a first electrode electrically connected to an impurity region and a bae layer of the semiconductor substrate, a second electrode connected to a substrate, and an interlayer insulating film disposed between a gate electrode and the first electrode. The trench gate structure includes a gate insulating film disposed in a trench of the semiconductor substrate and the gate electrode disposed on the gate insulating film. A portion of the semiconductor substrate adjoining the trench has a termination structure in which dangling bonds are terminated with at least one of nitrogen, hydrogen or phosphorous. The interlayer insulating film has a contact insulating film that is in contact with the gate electrode. The contact insulating film is provided by a deposited film.

公开(公告)号：US20220302251A1

公开(公告)日：2022-09-22

申请号：US17678661

申请日：2022-02-23

Applicant: FUJI ELECTRIC CO., LTD. ,  DENSO CORPORATION

Inventor： Masanobu IWAYA ,  Kensuke HATA

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L21/76 ,  H01L21/761 ,  H01L29/66

Abstract: A silicon carbide semiconductor device includes, on a front surface of a silicon carbide semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, a second semiconductor layer of a second conductivity type, a third semiconductor layer of the first conductivity type, a first semiconductor region of the first conductivity type selectively provided on a first side of the third semiconductor layer opposite to a second side thereof facing the silicon carbide semiconductor substrate, second semiconductor regions of the second conductivity type that have an impurity concentration higher than that of the second semiconductor layer, trenches, gate electrodes provided via gate insulating films, an interlayer insulating film, a first electrode, and a second electrode. The first semiconductor region is thinner than a portion of the third semiconductor layer between the first semiconductor region and the second semiconductor layer.

公开(公告)号：US20160202132A1

公开(公告)日：2016-07-14

申请号：US14913067

申请日：2014-07-30

Applicant: DENSO CORPORATION

Inventor： Takashi INOUE ,  Kensuke HATA ,  Tetsuya KATOH ,  Kenichi SAKAI ,  Mayumi UNO ,  Junichi TAKEYA

IPC: G01L1/22 ,  H01L51/05

CPC classification number: G01L1/2293 ,  G01L1/18 ,  H01L29/22 ,  H01L29/84 ,  H01L51/057

Abstract: A load sensor is constituted by a rib and a vertical transistor including an organic semiconductor film, and a load measurement can be executed based on a change of a gap between a drain electrode and a source electrode which is a channel length of the vertical transistor. Therefore, a change of a current Ids is in a linear relationship to a load applied to the load sensor.

Abstract translation: 负载传感器由肋和包括有机半导体膜的垂直晶体管构成，并且可以基于作为垂直晶体管的沟道长度的漏电极和源电极之间的间隙的变化来执行负载测量。 因此，电流Ids的改变与施加到负载传感器的负载成线性关系。