公开(公告)号：US09658121B2

公开(公告)日：2017-05-23

申请号：US14913067

申请日：2014-07-30

Applicant: DENSO CORPORATION

Inventor： Takashi Inoue ,  Kensuke Hata ,  Tetsuya Katoh ,  Kenichi Sakai ,  Mayumi Uno ,  Junichi Takeya

IPC: G01L1/22 ,  G01L1/18 ,  H01L51/05

CPC classification number: G01L1/2293 ,  G01L1/18 ,  H01L29/22 ,  H01L29/84 ,  H01L51/057

Abstract: A load sensor is constituted by a rib and a vertical transistor including an organic semiconductor film, and a load measurement can be executed based on a change of a gap between a drain electrode and a source electrode which is a channel length of the vertical transistor. Therefore, a change of a current Ids is in a linear relationship to a load applied to the load sensor.