公开(公告)号：US20190296149A1

公开(公告)日：2019-09-26

申请号：US16439023

申请日：2019-06-12

Applicant: DENSO CORPORATION

Inventor： Tsuyoshi YAMAMOTO ,  Kenta GODA ,  Shunsuke HARADA ,  Yoshiaki NAKAYAMA

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/739

Abstract: In a semiconductor device, a trench is continuously connected to reach a main cell region and a sense cell region, and a shield electrode and a gate electrode layer are continuously connected to reach the main cell region and the sense cell region within the trench. The shield electrode extends to a side of the main cell region away from the sense cell region on one end side of the trench in a longitudinal direction to be electrically connected to an upper electrode. The gate electrode layer extends to a side of the main cell region away from the sense cell region on the other end side of the trench in the longitudinal direction to be electrically connected to a gate liner.

公开(公告)号：US20230197774A1

公开(公告)日：2023-06-22

申请号：US18060191

申请日：2022-11-30

Applicant: DENSO CORPORATION

Inventor： Shinichiro MIYAHARA ,  Shunsuke HARADA ,  Tomoo MORINO

IPC: H01L29/06 ,  H01L29/16 ,  H01L29/10 ,  H01L29/78 ,  H01L21/04 ,  H01L29/66

CPC classification number: H01L29/063 ,  H01L29/1608 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/7811 ,  H01L29/7813 ,  H01L21/0465 ,  H01L21/049 ,  H01L29/66068

Abstract: A semiconductor device includes a vertical semiconductor element having a deep layer, a current dispersion layer, a base region, a high-concentration region, and a trench gate structure. The deep layer has multiple sections being apart to each other in one direction. The current dispersion layer is between adjacent two of the sections of the deep layer. The high-concentration region is on a portion of the base region. The trench gate structure includes a gate trench, a gate insulation film and a gate electrode. The current dispersion layer is at a bottom of the trench gate structure, and has an ion-implanted layer extending from a bottom portion of the gate trench to a bottom portion of the deep layer or a location below the bottom portion of the deep layer.