公开(公告)号：US20210257273A1

公开(公告)日：2021-08-19

申请号：US17172361

申请日：2021-02-10

Applicant: DENSO CORPORATION

Inventor： Yoshitaka KATO ,  Takeshi ENDO

IPC: H01L23/367 ,  H01L23/31 ,  H01L23/538 ,  H01L23/00

Abstract: A semiconductor module includes a power element, a signal wiring, and a heat sink. The signal wiring is connected to a signal pad of the power element. The heat sink cools the power element. The power element has an active area provided by a portion where the signal pad is formed. The signal pad is thermally connected to the heat sink via the signal wiring.

公开(公告)号：US20240347521A1

公开(公告)日：2024-10-17

申请号：US18594334

申请日：2024-03-04

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Yoshitaka KATO ,  Takeshi ENDO ,  Hiroshi ISHINO

IPC: H01L25/16 ,  H01L23/00 ,  H01L23/31 ,  H01L23/42

CPC classification number: H01L25/162 ,  H01L23/42 ,  H01L23/3121 ,  H01L24/29 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/29139 ,  H01L2224/32225 ,  H01L2224/33181

Abstract: A semiconductor device includes a semiconductor module, a wiring substrate, a sealing member, and a thermal diffusion plate. The semiconductor module includes a semiconductor chip in which a semiconductor element is disposed. The wiring substrate is electrically connected to the semiconductor module. The sealing member seals the semiconductor module and the wiring substrate. The thermal diffusion plate is disposed between the semiconductor module and the wiring substrate, and has a thermal conductivity higher than a thermal conductivity of the sealing member. The thermal diffusion plate has a plate shape and is disposed in the sealing member in a state where a plane direction of the thermal diffusion plate is along a direction intersecting an arrangement direction of the semiconductor module and the wiring substrate.

公开(公告)号：US20240304560A1

公开(公告)日：2024-09-12

申请号：US18520743

申请日：2023-11-28

Applicant: DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  MIRISE Technologies Corporation

Inventor： Kazuki KUWATA ,  Hiroshi ISHINO ,  Takeshi ENDO ,  Yoshitaka KATO

IPC: H01L23/538 ,  H01L21/56 ,  H01L21/60 ,  H01L23/00 ,  H01L23/31 ,  H01L25/16

CPC classification number: H01L23/5386 ,  H01L21/56 ,  H01L21/60 ,  H01L23/3121 ,  H01L24/81 ,  H01L24/95 ,  H01L25/16 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/73253 ,  H01L2224/81191 ,  H01L2224/95 ,  H01L2924/10272 ,  H01L2924/13055 ,  H01L2924/13091 ,  H01L2924/1426

Abstract: A semiconductor device includes a first lead wire connected to a first connection target; a second lead wire connected to a second connection target; and a sealing resin that seals the first connection target, the second connection target, the first lead wire, and the second lead wire. The first lead wire includes a first connection portion connected to the first connection target, a first top portion exposed from the sealing resin, and a first standing portion connecting the first connection portion and the first top portion. The second lead wire includes a second connection portion connected to the second connection target, a second top portion exposed from the sealing resin, and a second standing portion connecting the second connection portion and the second top portion. The first top portion and the second top portion are disposed to face each other.

公开(公告)号：US20190181856A1

公开(公告)日：2019-06-13

申请号：US16278337

申请日：2019-02-18

Applicant: DENSO CORPORATION

Inventor： Yoshitaka KATO ,  Kenji KOMIYA ,  Yusuke SHINDO ,  Yoshinori HAYASHI ,  Kenichi WAKABAYASHI

IPC: H03K17/16 ,  H02M1/08 ,  H02M1/32 ,  H02M7/537

CPC classification number: H03K17/166 ,  H02M1/08 ,  H02M1/32 ,  H02M3/158 ,  H02M7/537 ,  H02M7/53875 ,  H02M2001/0009 ,  H02M2001/007 ,  H03K2217/0081

Abstract: A semiconductor device turns on and off a power switching device having a gate terminal and output terminals between which an output current is produced by a gate voltage applied to the gate terminal. The semiconductor device includes: an output current detector detecting a current value correlated with the output current; a voltage detector detecting a voltage across the output terminals of the power switching device; a clamp circuit clamping the gate voltage at a predetermined value; and a controller controlling the clamp circuit to adjust the gate voltage based on the voltage detected by the voltage detector. The controller controls the clamp circuit to set the gate voltage to be at a minimum voltage according to the detected voltage to cause the output current to be larger than a threshold current required for detecting the short circuit in the power switching device.