公开(公告)号：US20230054939A1

公开(公告)日：2023-02-23

申请号：US17819666

申请日：2022-08-15

Applicant: DISCO CORPORATION

Inventor： Hayato IGA ,  Shin TABATA ,  Kazuya HIRATA

IPC: C30B29/06 ,  C30B29/64 ,  C30B30/00 ,  C30B33/06

Abstract: After separation layers are formed inside a single-crystal silicon ingot, a single-crystal silicon substrate is split off from the single-crystal silicon ingot with use of these separation layers as the point of origin. This can improve the productivity of the single-crystal silicon substrate compared with the case of manufacturing the single-crystal silicon substrate from the single-crystal silicon ingot by a wire saw.

公开(公告)号：US20220032503A1

公开(公告)日：2022-02-03

申请号：US17443692

申请日：2021-07-27

Applicant: DISCO CORPORATION

Inventor： Kazuya HIRATA ,  Shin TABATA

IPC: B28D5/00 ,  B23K26/53 ,  B23K26/067 ,  B23K26/082 ,  B23K26/0622

Abstract: An Si substrate manufacturing method includes a separation band forming step of forming a separation band through positioning a focal point of a laser beam with a wavelength having transmissibility with respect to Si to a depth, equivalent to a thickness of an Si substrate to be manufactured, from a flat surface of an Si ingot and irradiating the Si ingot with the laser beam while relatively moving the focal point and the Si ingot in a direction parallel to a cross line at which a crystal plane {100} and a crystal plane {111} intersect or a direction [110] orthogonal to the cross line, and an indexing feed step of executing indexing feed of the focal point and the Si ingot relatively in a direction orthogonal to a direction in which the separation band is formed.

公开(公告)号：US20230377940A1

公开(公告)日：2023-11-23

申请号：US18321411

申请日：2023-05-22

Applicant: DISCO CORPORATION

Inventor： Yu ZHAO ,  Shin TABATA

IPC: H01L21/683 ,  H01L21/3065 ,  B23K26/40

CPC classification number: H01L21/6836 ,  H01L21/3065 ,  B23K26/40 ,  H01L2221/68327 ,  H01L2221/6834

Abstract: There is provided a manufacturing method of chips in which a wafer segmented into a plurality of regions by a plurality of planned dividing lines set in a lattice manner is divided to manufacture the chips. The manufacturing method of chips includes a groove forming step of holding the wafer including a first surface and a second surface by a holding table and forming grooves having a depth smaller than a thickness of the wafer along the planned dividing lines on the side of the first surface of the wafer, a first protective film coating step of coating the first surface of the wafer and side surfaces of the grooves with a first protective film, and a dividing step of dividing the wafer along the planned dividing lines. Plasma etching is executed for the wafer from the side of the first surface in the dividing step.

公开(公告)号：US20240290624A1

公开(公告)日：2024-08-29

申请号：US18439028

申请日：2024-02-12

Applicant: DISCO CORPORATION

Inventor： Sho OSAWA ,  Senichi RYO ,  Yukinobu OHURA ,  Shin TABATA

IPC: H01L21/3065 ,  C09D5/32 ,  C09D123/08 ,  H01L21/027 ,  H01L21/02

CPC classification number: H01L21/3065 ,  C09D5/32 ,  C09D123/0853 ,  H01L21/0275 ,  H01L21/0206

Abstract: A protective film is disposed on a surface of a workpiece has a hardness in a range from 0.0093 GPa to 0.13 GPa. A protective film agent includes a water-soluble resin, a light absorbing agent, a plasticizer, and a solvent in which the water-soluble resin, the light absorbing agent, and the plasticizer are dissolved. The ratio of the mass of the plasticizer to a mass of the water-soluble resin is in a range from 15% to 53%, and a protective film formed from the protective film agent has a hardness in a range from 0.0093 GPa to 0.13 GPa.

公开(公告)号：US20210121988A1

公开(公告)日：2021-04-29

申请号：US17065696

申请日：2020-10-08

Applicant: DISCO CORPORATION

Inventor： Kazuya HIRATA ,  Shin TABATA

IPC: B23K26/53 ,  B23K26/0622 ,  B23K26/70 ,  B23K26/08 ,  B23K26/06 ,  B23K26/60 ,  B23K26/38

Abstract: A processing method for processing an SiC ingot includes a peel-off zone forming step of applying a processing pulsed laser beam having a wavelength transmittable through the ingot to the ingot while positioning a focused spot of the processing pulsed laser beam at a depth corresponding to a thickness of a wafer to be peeled off from the ingot, to form belt-shaped peel-off zones each including cracks in the ingot, a reflected beam detecting step of applying an inspecting laser beam having a wavelength transmittable through the ingot and reflectable from cracks of the peel-off zones and detecting an intensity of a beam reflected by the cracks, and a processing laser beam output power adjusting step of adjusting an output power of the processing pulsed laser beam to keep the intensity of the reflected beam detected in the reflected beam detecting step within a predetermined range.