公开(公告)号：US11859309B2

公开(公告)日：2024-01-02

申请号：US16479551

申请日：2019-05-22

申请人： DS TECHNO CO., LTD.

发明人： Hak Jun Ahn ,  Young Ju Kim ,  Youn Woong Jung ,  Kang Suk Kim ,  Jun Baek Song ,  Won Geun Son

IPC分类号： C30B29/36 ,  C23C16/32 ,  C30B25/02 ,  H01L21/02 ,  C01B32/977 ,  C01B32/956

CPC分类号： C30B29/36 ,  C01B32/977 ,  C23C16/325 ,  C30B25/02 ,  H01L21/0262 ,  H01L21/02529 ,  C01B32/956 ,  H01L21/02274

摘要： In the present invention, a chemical-vapor-deposition silicon carbide (SIC) bulk having an improved etching characteristic includes silicon carbide (SIC) manufactured by a chemical vapor deposition method using MTS (methyltrichlorosilane), hydrogen (H2), and nitrogen (N2) gases. The SIC manufactured by the chemical vapor deposition method is β-SiC (3C-SiC), and 6H-SiC is present in the SIC manufactured by the chemical vapor deposition method. Five peaks having a reference code of 03-065-0360 and a peak having a reference code of 00-049-1428 are confirmed to be present from XRD analysis of the silicon carbide bulk, and a nitrogen concentration value is 4.0×1018 atoms/cm3 or more at a depth of 1,500 nm or more from the surface of the bulk, which is a metastable layer.