公开(公告)号：US20130175238A1

公开(公告)日：2013-07-11

申请号：US13474335

申请日：2012-05-17

申请人： Dae Jo HONG ,  Chang Bo LEE ,  Cheol Ho CHOI ,  Chang Sup RYU ,  Sung Pyo HONG ,  Jong Hoon JEON ,  Akira HOSOMI ,  Hiroshi TAKAMIYA

发明人： Dae Jo HONG ,  Chang Bo LEE ,  Cheol Ho CHOI ,  Chang Sup RYU ,  Sung Pyo HONG ,  Jong Hoon JEON ,  Akira HOSOMI ,  Hiroshi TAKAMIYA

IPC分类号： C09K13/06 ,  H05K3/00

CPC分类号： C09K13/06 ,  H05K3/067 ,  H05K3/383

摘要： This invention relates to an etching solution including hydrogen peroxide, sulfuric acid, chlorine ions, benzotriazole and pyrazole, and to a method of manufacturing a printed wiring substrate wherein the surface of the metal wiring of the printed wiring substrate is treated with an alkali solution, roughened using the etching solution and then subjected to anti-rust treatment, thus forming porous surface irregularities and micro anchors even with a small etching amount of the metal (Cu) to thereby obtain a high force of adhesion between the metal and an insulating material.

摘要翻译： 本发明涉及包括过氧化氢，硫酸，氯离子，苯并三唑和吡唑的蚀刻溶液，以及印刷线路基板的金属布线的表面用碱溶液处理的印刷布线基板的制造方法， 使用蚀刻溶液进行粗糙化，然后进行防锈处理，从而即使用小的蚀刻量的金属（Cu）也形成多孔表面凹凸和微锚，从而获得金属和绝缘材料之间的高粘合力。

公开(公告)号：US20110024830A1

公开(公告)日：2011-02-03

申请号：US12650436

申请日：2009-12-30

申请人： Sung Pyo HONG

发明人： Sung Pyo HONG

IPC分类号： H01L29/78 ,  H01L21/28 ,  H01L21/3205

CPC分类号： H01L21/76897 ,  H01L29/66621

摘要： A semiconductor device comprises a buried gate formed by being buried under a surface of a semiconductor substrate, a dummy gate formed on the buried gate, and a landing plug formed on a junction region of the semiconductor substrate being adjacent to the dummy gate.

摘要翻译： 半导体器件包括通过埋在半导体衬底的表面下方形成的掩埋栅极，形成在掩埋栅极上的伪栅极和形成在与虚拟栅极相邻的半导体衬底的接合区域上的着色插塞。