公开(公告)号：US20120261608A1

公开(公告)日：2012-10-18

申请号：US13516524

申请日：2010-12-14

Applicant: Akira Hosomi ,  Kensuke Ohmae

Inventor： Akira Hosomi ,  Kensuke Ohmae

IPC: H01L21/28 ,  C09K13/00

CPC classification number: H01L21/32134 ,  C23F1/02 ,  C23F1/18 ,  C23F1/44 ,  H01L23/3114 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/03916 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13007 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/01022 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: Disclosed are an etchant which is used for redistribution of a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and citric acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of citric acid of from 1 to 20% by mass, with a molar ratio of hydrogen peroxide and citric acid being in the range of from 0.3 to 5; an etchant for selective etching of copper which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and malic acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of malic acid of from 1.5 to 25% by mass, with a molar ratio of hydrogen peroxide and malic acid being in the range of from 0.2 to 6; and a method for manufacturing a semiconductor device using such an etchant.

Abstract translation: 公开了一种蚀刻剂，其用于具有电极的半导体衬底的再分配，并且能够在不蚀刻镍的情况下选择性地蚀刻铜; 以及使用该半导体器件的半导体器件的制造方法。 具体公开的是用于半导体衬底的再分配并含有过氧化氢和柠檬酸并且具有0.75至12质量％的过氧化氢含量和1至20％的柠檬酸含量的蚀刻剂，通过 质量，过氧化氢和柠檬酸的摩尔比在0.3至5的范围内; 用于选择性蚀刻铜的蚀刻剂，其用于半导体衬底的再分配并且含有过氧化氢和苹果酸，并且具有0.75至12质量％的过氧化氢含量和1.5至25的苹果酸含量 质量％，过氧化氢和苹果酸的摩尔比在0.2〜6的范围内; 以及使用这种蚀刻剂制造半导体器件的方法。

公开(公告)号：US20050061202A1

公开(公告)日：2005-03-24

申请号：US10481018

申请日：2002-06-18

Applicant: Akira Hosomi ,  Naoki Kogure ,  Kenichi Moriyama ,  Kenichi Takahashi ,  Atsushi Hosoda ,  Kazuhiko Ikeda

Inventor： Akira Hosomi ,  Naoki Kogure ,  Kenichi Moriyama ,  Kenichi Takahashi ,  Atsushi Hosoda ,  Kazuhiko Ikeda

IPC: C23C22/52 ,  C23F1/18 ,  H05K3/26 ,  H05K3/38 ,  C09D11/00

CPC classification number: C23F1/18 ,  C23C22/52 ,  H05K3/383 ,  H05K2203/124

Abstract: The surface treatment agent for copper and copper alloys contains hydrogen peroxide, a mineral acid, an azole compound, silver ion and a halide ion. The surface treatment agent for copper and copper alloys is useful in the production of printed wiring boards in electronics industry. The surface treatment agent roughens the surface of copper and copper alloys. Particularly, the surface treatment agent can form a uniform and undulation-free roughened surface on copper-clad substrates having plated mirror surface, this having been difficult in conventional techniques, thereby significantly improving the adhesion to etching resists, solder resists, in addition, to prepregs and a resin for mounting electronic parts.

Abstract translation: 铜和铜合金表面处理剂含有过氧化氢，无机酸，唑类化合物，银离子和卤离子。 铜和铜合金表面处理剂可用于电子工业印刷线路板的生产。 表面处理剂使铜和铜合金的表面变粗糙。 特别地，表面处理剂可以在具有电镀镜面的铜包覆基板上形成均匀且无起伏的粗糙表面，这在常规技术中是困难的，从而显着提高与抗蚀剂，阻焊剂的粘附性，另外， 预浸料和用于安装电子部件的树脂。

公开(公告)号：US4946955A

公开(公告)日：1990-08-07

申请号：US242470

申请日：1988-09-09

Applicant: Akira Hosomi

Inventor： Akira Hosomi

IPC: C07D513/04

CPC classification number: C07D513/04

Abstract: A method for preparation of polycyclic 1,3-thiazolidines is described. The method comprises reacting a fluoride ion source, in a solvent, with an onium salt synthesized by the reaction of a nitrogenous heteroaromatic compound with a halomethyl trimethylsilylmethyl sulfide, the halomethyl trimethylsilylmethyl sulfide being selected from the group consisting of chloromethyl trimethylsilylmethyl sulfide, bromomethyl trimethylsilylmethyl sulfide, or iodomethyl trimethylsilylmethyl sulfide.

公开(公告)号：US4973705A

公开(公告)日：1990-11-27

申请号：US242994

申请日：1988-09-09

Applicant: Akira Hosomi

Inventor： Akira Hosomi

IPC: C07D327/04 ,  C07D411/04 ,  C07D497/10

CPC classification number: C07D411/04 ,  C07D327/04 ,  C07D497/10

Abstract: A method for preparation of 1,3-oxathiolanes is described. The method comprises reacting, in a solvent, a fluoride ion source, a carbonyl compound, and a halomethyl trimethylsilylmethyl sulfide, wherein the halomethyl trimethylsilyl methyl sulfide is selected from a group consisting of chloromethyl trimethylsilylmethyl sulfide, bromomethyl trimethylsilylmethyl sulfide, or iodomethyl trimethylsilylmethyl sulfide.

公开(公告)号：US09177827B2

公开(公告)日：2015-11-03

申请号：US13518714

申请日：2010-12-24

Applicant: Akira Hosomi

Inventor： Akira Hosomi

IPC: H01L21/00 ,  H01L21/3213 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L23/00 ,  H01L23/525

CPC classification number: H01L21/32134 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/03462 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: Disclosed are an etchant which is used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel, and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant to be used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode, including hydrogen peroxide, an organic acid, and an organic phosphonic acid, wherein the organic acid is at least one member selected from citric acid and malic acid; a content of hydrogen peroxide is from 0.75 to 12% by mass; a content of the organic acid is from 0.75 to 25% by mass; and a content of the organic phosphonic acid is from 0.0005 to 1% by mass, and a method for manufacturing a semiconductor device using the etchant.

Abstract translation: 公开了一种蚀刻剂，其用于制造使用具有电极的半导体衬底并且能够在不蚀刻镍的情况下选择性地蚀刻铜的半导体器件，以及使用该蚀刻剂的半导体器件的制造方法。 具体公开的是用于制造使用具有包括过氧化氢，有机酸和有机膦酸的电极的半导体衬底的半导体器件的蚀刻剂，其中有机酸是选自柠檬酸中的至少一种 和苹果酸; 过氧化氢的含量为0.75〜12质量％ 有机酸的含量为0.75〜25质量％ 有机膦酸的含量为0.0005〜1质量％，以及使用该蚀刻剂的半导体装置的制造方法。

公开(公告)号：US20120270396A1

公开(公告)日：2012-10-25

申请号：US13518714

申请日：2010-12-24

Applicant: Akira Hosomi

Inventor： Akira Hosomi

IPC: H01L21/306 ,  C09K13/00 ,  H01L21/283

CPC classification number: H01L21/32134 ,  C23F1/02 ,  C23F1/18 ,  C23F1/26 ,  C23F1/44 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/03462 ,  H01L2224/0361 ,  H01L2224/0391 ,  H01L2224/03912 ,  H01L2224/0401 ,  H01L2224/05124 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05573 ,  H01L2224/05655 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/11849 ,  H01L2224/1191 ,  H01L2224/13022 ,  H01L2224/13024 ,  H01L2224/13082 ,  H01L2224/13111 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599

Abstract: Disclosed are an etchant which is used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel, and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant to be used for the manufacture of a semiconductor device using a semiconductor substrate having an electrode, including hydrogen peroxide, an organic acid, and an organic phosphonic acid, wherein the organic acid is at least one member selected from citric acid and malic acid; a content of hydrogen peroxide is from 0.75 to 12% by mass; a content of the organic acid is from 0.75 to 25% by mass; and a content of the organic phosphonic acid is from 0.0005 to 1% by mass, and a method for manufacturing a semiconductor device using the etchant.

Abstract translation: 公开了一种蚀刻剂，其用于制造使用具有电极的半导体衬底并且能够在不蚀刻镍的情况下选择性地蚀刻铜的半导体器件，以及使用该蚀刻剂的半导体器件的制造方法。 具体公开的是用于制造使用具有包括过氧化氢，有机酸和有机膦酸的电极的半导体衬底的半导体器件的蚀刻剂，其中有机酸是选自柠檬酸中的至少一种 和苹果酸; 过氧化氢的含量为0.75〜12质量％ 有机酸的含量为0.75〜25质量％ 有机膦酸的含量为0.0005〜1质量％，以及使用该蚀刻剂的半导体装置的制造方法。

公开(公告)号：US5328894A

公开(公告)日：1994-07-12

申请号：US846177

申请日：1992-03-05

Applicant: Hidechika Wakabayashi ,  Yasuo Sugihara ,  Akira Hosomi ,  Futoshi Nakaya

Inventor： Hidechika Wakabayashi ,  Yasuo Sugihara ,  Akira Hosomi ,  Futoshi Nakaya

IPC: A23L3/3436 ,  A23L3/349 ,  A23L3/3544 ,  B01J20/02 ,  B01J20/22 ,  A23B4/00

CPC classification number: A23L3/3436 ,  A23L3/3544

Abstract: A food-preserving agent comprising an oxygen absorbent and a compound represented by the following structural formula (I): ##STR1## , wherein n is an integer of 2 to 4 and X is H or CH.sub.3, can remove generated acetaldehyde effective, thereby preserving food without any fear of disagreeable odor for a long duration.

Abstract translation: 包含氧吸收剂和由以下结构式（I）表示的化合物的食品防腐剂：其中n为2至4的整数，X为H或CH 3，可以除去生成的乙醛有效 ，从而保持食物，而不会长时间不怕令人不愉快的气味。

公开(公告)号：US20130175238A1

公开(公告)日：2013-07-11

申请号：US13474335

申请日：2012-05-17

Applicant: Dae Jo HONG ,  Chang Bo LEE ,  Cheol Ho CHOI ,  Chang Sup RYU ,  Sung Pyo HONG ,  Jong Hoon JEON ,  Akira HOSOMI ,  Hiroshi TAKAMIYA

Inventor： Dae Jo HONG ,  Chang Bo LEE ,  Cheol Ho CHOI ,  Chang Sup RYU ,  Sung Pyo HONG ,  Jong Hoon JEON ,  Akira HOSOMI ,  Hiroshi TAKAMIYA

IPC: C09K13/06 ,  H05K3/00

CPC classification number: C09K13/06 ,  H05K3/067 ,  H05K3/383

Abstract: This invention relates to an etching solution including hydrogen peroxide, sulfuric acid, chlorine ions, benzotriazole and pyrazole, and to a method of manufacturing a printed wiring substrate wherein the surface of the metal wiring of the printed wiring substrate is treated with an alkali solution, roughened using the etching solution and then subjected to anti-rust treatment, thus forming porous surface irregularities and micro anchors even with a small etching amount of the metal (Cu) to thereby obtain a high force of adhesion between the metal and an insulating material.

Abstract translation: 本发明涉及包括过氧化氢，硫酸，氯离子，苯并三唑和吡唑的蚀刻溶液，以及印刷线路基板的金属布线的表面用碱溶液处理的印刷布线基板的制造方法， 使用蚀刻溶液进行粗糙化，然后进行防锈处理，从而即使用小的蚀刻量的金属（Cu）也形成多孔表面凹凸和微锚，从而获得金属和绝缘材料之间的高粘合力。

公开(公告)号：US08900478B2

公开(公告)日：2014-12-02

申请号：US13516524

申请日：2010-12-14

Applicant: Akira Hosomi ,  Kensuke Ohmae

Inventor： Akira Hosomi ,  Kensuke Ohmae

IPC: C09K13/00 ,  H01L23/00 ,  C23F1/02 ,  C23F1/18 ,  H01L21/3213 ,  H01L23/31 ,  H01L23/525

CPC classification number: H01L21/32134 ,  C23F1/02 ,  C23F1/18 ,  C23F1/44 ,  H01L23/3114 ,  H01L23/525 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02311 ,  H01L2224/02313 ,  H01L2224/02331 ,  H01L2224/0239 ,  H01L2224/03462 ,  H01L2224/0347 ,  H01L2224/0361 ,  H01L2224/03614 ,  H01L2224/03912 ,  H01L2224/03914 ,  H01L2224/03916 ,  H01L2224/0401 ,  H01L2224/05008 ,  H01L2224/05027 ,  H01L2224/05124 ,  H01L2224/05144 ,  H01L2224/05147 ,  H01L2224/05166 ,  H01L2224/05548 ,  H01L2224/05572 ,  H01L2224/05647 ,  H01L2224/11334 ,  H01L2224/11462 ,  H01L2224/1147 ,  H01L2224/1191 ,  H01L2224/11912 ,  H01L2224/13007 ,  H01L2224/13082 ,  H01L2224/13083 ,  H01L2224/131 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/01022 ,  H01L2224/13099 ,  H01L2224/13599 ,  H01L2224/05599 ,  H01L2224/05099 ,  H01L2224/29099 ,  H01L2224/29599 ,  H01L2224/05552

Abstract: Disclosed are an etchant which is used for redistribution of a semiconductor substrate having an electrode and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the same. Specifically disclosed are an etchant which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and citric acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of citric acid of from 1 to 20% by mass, with a molar ratio of hydrogen peroxide and citric acid being in the range of from 0.3 to 5; an etchant for selective etching of copper which is used for redistribution of a semiconductor substrate and which contains hydrogen peroxide and malic acid and has a content of hydrogen peroxide of from 0.75 to 12% by mass and a content of malic acid of from 1.5 to 25% by mass, with a molar ratio of hydrogen peroxide and malic acid being in the range of from 0.2 to 6; and a method for manufacturing a semiconductor device using such an etchant.

Abstract translation: 公开了一种蚀刻剂，其用于具有电极的半导体衬底的再分配，并且能够在不蚀刻镍的情况下选择性地蚀刻铜; 以及使用该半导体器件的半导体器件的制造方法。 具体公开的是用于半导体衬底的再分配并含有过氧化氢和柠檬酸并且具有0.75至12质量％的过氧化氢含量和1至20％的柠檬酸含量的蚀刻剂，通过 质量，过氧化氢和柠檬酸的摩尔比在0.3至5的范围内; 用于选择性蚀刻铜的蚀刻剂，其用于半导体衬底的再分配并且含有过氧化氢和苹果酸，并且具有0.75至12质量％的过氧化氢含量和1.5至25的苹果酸含量 质量％，过氧化氢和苹果酸的摩尔比在0.2〜6的范围内; 以及使用这种蚀刻剂制造半导体器件的方法。

公开(公告)号：US07232528B2

公开(公告)日：2007-06-19

申请号：US10481018

申请日：2002-06-18

Applicant: Akira Hosomi ,  Naoki Kogure ,  Kenichi Moriyama ,  Kenichi Takahashi ,  Atsushi Hosoda ,  Kazuhiko Ikeda

Inventor： Akira Hosomi ,  Naoki Kogure ,  Kenichi Moriyama ,  Kenichi Takahashi ,  Atsushi Hosoda ,  Kazuhiko Ikeda

IPC: H01L21/302

CPC classification number: C23F1/18 ,  C23C22/52 ,  H05K3/383 ,  H05K2203/124

Abstract: The surface treatment agent for copper and copper alloys contains hydrogen peroxide, a mineral acid, an azole compound, silver ion and a halide ion. The surface treatment agent for copper and copper alloys is useful in the production of printed wiring boards in electronics industry. The surface treatment agent roughens the surface of copper and copper alloys. Particularly, the surface treatment agent can form a uniform and undulation-free roughened surface on copper-clad substrates having plated mirror surface, this having been difficult in conventional techniques, thereby significantly improving the adhesion to etching resists, solder resists, in addition, to prepregs and a resin for mounting electronic parts.

Abstract translation: 铜和铜合金表面处理剂含有过氧化氢，无机酸，唑类化合物，银离子和卤离子。 铜和铜合金表面处理剂可用于电子工业印刷线路板的生产。 表面处理剂使铜和铜合金的表面变粗糙。 特别地，表面处理剂可以在具有电镀镜面的铜包覆基板上形成均匀且无起伏的粗糙表面，这在常规技术中是困难的，从而显着提高与抗蚀剂，阻焊剂的粘附性，另外， 预浸料和用于安装电子部件的树脂。