Silicon carbide single crystal and production thereof
    1.
    发明授权
    Silicon carbide single crystal and production thereof 有权
    碳化硅单晶及其制造

    公开(公告)号:US07553373B2

    公开(公告)日:2009-06-30

    申请号:US11435762

    申请日:2006-05-18

    IPC分类号: C30B25/12

    CPC分类号: C30B23/025 C30B29/36

    摘要: A method of producing a silicon carbide single crystal, having: fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive; applying a uniform pressure on the entire surface of the seed crystal by contacting a flexible bag which is inflatable and deflatable to the seed crystal by charging a gas into the to flexible bag; hardening the adhesive; and sublimating a silicon carbide powder obtained by calcinating a mixture containing at least a silicon source and a resol xylene resin, having a nitrogen content of 100 mass ppm or less and having a content of each impurity elements of 0.1 mass ppm or less, and re-crystallizing for growing a silicon carbide single crystal.

    摘要翻译: 一种碳化硅单晶的制造方法,其特征在于,具有:将晶种固定,包括将晶种固定在具有粘合剂的晶种固定部分上; 通过将气体充入到柔性袋中使可充气和可充气的柔性袋接触到晶种的整个表面上施加均匀的压力; 硬化粘合剂; 和通过煅烧至少包含硅源和甲阶戊二醛二甲苯树脂的混合物而获得的碳化硅粉末,其氮含量为100质量ppm以下,杂质元素的含量为0.1质量ppm以下,并且re - 用于生长碳化硅单晶的结晶。

    SEED CRYSTAL FIXING DEVICE
    2.
    发明申请
    SEED CRYSTAL FIXING DEVICE 有权
    SEED水晶固定装置

    公开(公告)号:US20100065223A1

    公开(公告)日:2010-03-18

    申请号:US12444105

    申请日:2007-10-03

    IPC分类号: B29C65/48

    摘要: Provided is a seed crystal fixing device 1 for fixing a seed crystal 9 to a seed crystal placing part 3 of a reaction vessel with an adhesive interposed in between. The seed crystal fixing device 1 includes: a chamber 10 capable of installing the seed crystal placing part 3 in the inside thereof; and a flexible pouched body 16 placed on an upper surface of the chamber 10. The flexible pouched body 16 is inflated with a delivery of gas and is deflated with an exhaust of the gas. The flexible pouched body 16 is configured to come into contact with a surface of the seed crystal 9 when inflated, and thereby applies pressure uniformly across the entire surface of the seed crystal 9. The upper surface of the chamber 10 forms convex shape towards the seed crystal placing part 3, and thereby uniform press-bonding of the seed crystal 9 to the seed crystal placing part 3 is accomplished.

    摘要翻译: 本发明提供一种种子晶体定影装置1,用于将晶种9固定在反应容器的晶种放置部分3上,其间插有粘合剂。 晶种定影装置1包括:能够将晶种放置部3安装在其内部的室10; 以及放置在室10的上表面上的柔性袋体16.柔性袋体16随着气体输送而膨胀,并与气体的排气一起放气。 柔性袋体16被配置为在膨胀时与晶种9的表面接触,从而在晶种9的整个表面均匀地施加压力。腔室10的上表面朝向种子形成凸形 晶体放置部分3,从而实现了晶种9对晶种放置部分3的均匀压接。

    Seed crystal fixing device
    5.
    发明授权
    Seed crystal fixing device 有权
    种子晶体定影装置

    公开(公告)号:US08051888B2

    公开(公告)日:2011-11-08

    申请号:US12444105

    申请日:2007-10-03

    IPC分类号: B32B37/00

    摘要: Provided is a seed crystal fixing device 1 for fixing a seed crystal 9 to a seed crystal placing part 3 of a reaction vessel with an adhesive interposed in between. The seed crystal fixing device 1 includes: a chamber 10 capable of installing the seed crystal placing part 3 in the inside thereof; and a flexible pouched body 16 placed on an upper surface of the chamber 10. The flexible pouched body 16 is inflated with a delivery of gas and is deflated with an exhaust of the gas. The flexible pouched body 16 is configured to come into contact with a surface of the seed crystal 9 when inflated, and thereby applies pressure uniformly across the entire surface of the seed crystal 9. The upper surface of the chamber 10 forms convex shape towards the seed crystal placing part 3, and thereby uniform press-bonding of the seed crystal 9 to the seed crystal placing part 3 is accomplished.

    摘要翻译: 本发明提供一种种子晶体定影装置1,用于将晶种9固定在反应容器的晶种放置部分3上,其间插有粘合剂。 晶种定影装置1包括:能够将晶种放置部3安装在其内部的室10; 以及放置在室10的上表面上的柔性袋体16.柔性袋体16随着气体输送而膨胀,并与气体的排气一起放气。 柔性袋体16被配置为在膨胀时与晶种9的表面接触,从而在晶种9的整个表面均匀地施加压力。腔室10的上表面朝向种子形成凸形 晶体放置部分3,从而实现了晶种9对晶种放置部分3的均匀压接。

    Silicon carbide single crystal and method and apparatus for producing the same
    7.
    发明授权
    Silicon carbide single crystal and method and apparatus for producing the same 失效
    碳化硅单晶及其制造方法和装置

    公开(公告)号:US07387679B2

    公开(公告)日:2008-06-17

    申请号:US10558369

    申请日:2004-05-28

    IPC分类号: C30B25/12 C30B25/14

    摘要: A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.

    摘要翻译: 碳化硅单晶的制造方法在反应容器的第一端部存储升华规律材料, 在基本面向反应容器中的升华规律材料的第二端部上设置碳化硅单晶晶种; 并将升华的升华定律材料再结晶在晶种上以生长碳化硅单晶,其中在反应容器中设置密封部分以在设置在密封部分中的晶种上生长碳化硅单晶,同时防止 泄漏的升华升华法物质从大气升华。

    Single crystal of silicon carbide, and method and apparatus for producing the same
    8.
    发明申请
    Single crystal of silicon carbide, and method and apparatus for producing the same 失效
    碳化硅单晶及其制造方法和装置

    公开(公告)号:US20070034145A1

    公开(公告)日:2007-02-15

    申请号:US10558369

    申请日:2004-05-28

    摘要: A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.

    摘要翻译: 碳化硅单晶的制造方法在反应容器的第一端部存储升华规律材料, 在基本面向反应容器中的升华规律材料的第二端部上设置碳化硅单晶晶种; 并将升华的升华定律材料再结晶在晶种上以生长碳化硅单晶,其中在反应容器中设置密封部分以在设置在密封部分中的晶种上生长碳化硅单晶,同时防止 泄漏的升华升华法物质从大气升华。