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公开(公告)号：US07553373B2
公开(公告)日：2009-06-30
申请号：US11435762
申请日：2006-05-18
IPC分类号： C30B25/12
CPC分类号： C30B23/025 , C30B29/36
摘要： A method of producing a silicon carbide single crystal, having: fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive; applying a uniform pressure on the entire surface of the seed crystal by contacting a flexible bag which is inflatable and deflatable to the seed crystal by charging a gas into the to flexible bag; hardening the adhesive; and sublimating a silicon carbide powder obtained by calcinating a mixture containing at least a silicon source and a resol xylene resin, having a nitrogen content of 100 mass ppm or less and having a content of each impurity elements of 0.1 mass ppm or less, and re-crystallizing for growing a silicon carbide single crystal.
摘要翻译： 一种碳化硅单晶的制造方法，其特征在于，具有：将晶种固定，包括将晶种固定在具有粘合剂的晶种固定部分上; 通过将气体充入到柔性袋中使可充气和可充气的柔性袋接触到晶种的整个表面上施加均匀的压力; 硬化粘合剂; 和通过煅烧至少包含硅源和甲阶戊二醛二甲苯树脂的混合物而获得的碳化硅粉末，其氮含量为100质量ppm以下，杂质元素的含量为0.1质量ppm以下，并且re - 用于生长碳化硅单晶的结晶。
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公开(公告)号：US20060254507A1
公开(公告)日：2006-11-16
申请号：US11435762
申请日：2006-05-18
CPC分类号： C30B23/025 , C30B29/36
摘要： A method of producing a silicon carbide single crystal, having: fixing a seed crystal, including setting a seed crystal on a seed crystal fixing part with interposition of an adhesive; applying a uniform pressure on the entire surface of the seed crystal by contacting a flexible bag which is inflatable and deflatable to the seed crystal by charging a gas into the to flexible bag; hardening the adhesive; and sublimating a silicon carbide powder obtained by calcinating a mixture containing at least a silicon source and a resol xylene resin, having a nitrogen content of 100 mass ppm or less and having a content of each impurity elements of 0.1 mass ppm or less, and re-crystallizing for growing a silicon carbide single crystal.
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3.发明授权公开(公告)号：US07387679B2
公开(公告)日：2008-06-17
申请号：US10558369
申请日：2004-05-28
CPC分类号： C30B29/36 , C01B32/956 , C30B23/00 , Y02P20/149
摘要： A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.
摘要翻译： 碳化硅单晶的制造方法在反应容器的第一端部存储升华规律材料， 在基本面向反应容器中的升华规律材料的第二端部上设置碳化硅单晶晶种; 并将升华的升华定律材料再结晶在晶种上以生长碳化硅单晶，其中在反应容器中设置密封部分以在设置在密封部分中的晶种上生长碳化硅单晶，同时防止 泄漏的升华升华法物质从大气升华。
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4.发明申请公开(公告)号：US20070034145A1
公开(公告)日：2007-02-15
申请号：US10558369
申请日：2004-05-28
CPC分类号： C30B29/36 , C01B32/956 , C30B23/00 , Y02P20/149
摘要： A method of producing a silicon carbide single crystal has storing a sublimation law material on a first end portion in a reaction container; disposing a seed crystal of a silicon carbide single crystal on a second end portion substantially facing the sublimation law material in the reaction container; and re-crystallizing the sublimated sublimation law material on the seed crystal to grow a silicon carbide single crystal, wherein a sealing portion is provided in the reaction container to grow a silicon carbide single crystal on the seed crystal provided in the sealing portion while preventing the leak of the sublimated sublimation law material from the atmosphere for sublimation.
摘要翻译： 碳化硅单晶的制造方法在反应容器的第一端部存储升华规律材料， 在基本面向反应容器中的升华规律材料的第二端部上设置碳化硅单晶晶种; 并将升华的升华定律材料再结晶在晶种上以生长碳化硅单晶，其中在反应容器中设置密封部分以在设置在密封部分中的晶种上生长碳化硅单晶，同时防止 泄漏的升华升华法物质从大气升华。
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5.发明申请公开(公告)号：US20050205003A1
公开(公告)日：2005-09-22
申请号：US11133308
申请日：2005-05-20
申请人： Takayuki Maruyama , Shigeki Endo
发明人： Takayuki Maruyama , Shigeki Endo
摘要： A method of producing a silicon carbide single crystal in which a sublimation raw material 40 is accommodated at the side of vessel body 12 in a graphite crucible 10, placing a seed crystal of a silicon carbide single crystal at the side of cover body 11 of the graphite crucible 10, the sublimation raw material 40 is sublimated by a first induction heating coil 21 placed at the side of sublimation raw material 40, a re-crystallization atmosphere is form by a second induction heating coil 20 placed at the side of cover body 11 so that the sublimation raw material 40 sublimated by the first induction heating coil 21 is re-crystallizable only in the vicinity of the seed crystal of a silicon carbide single crystal, and the sublimation raw material 40 is re-crystallized on the seed crystal of a silicon carbide single crystal, and a silicon carbide single crystal 60 is grown while keeping the whole surface of its growth surface in convex shape through the all growth processes. A high quality silicon carbide single crystal with large diameter excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, suitable for electronic and optical devices and the like, and showing no contamination of polycrystals and polymorphs, no defect of micropipes and the like can be produced efficiently without cracking and the like.
摘要翻译： 一种生产碳化硅单晶的方法，其中升华原料40容纳在石墨坩埚10中的容器本体12侧，将碳化硅单晶的晶种放置在盖体11的侧面 石墨坩埚10中，升华原料40通过位于升华原料40一侧的第一感应加热线圈21而升华，通过设置在盖体11侧的第二感应加热线圈20形成再结晶气氛 使得由第一感应加热线圈21升华的升华原料40仅在碳化硅单晶的晶种附近再结晶，并且升华原料40在晶种上再结晶 碳化硅单晶和碳化硅单晶60生长，同时通过全部生长工艺将其生长表面的整个表面保持凸形。 具有优异的绝缘击穿性，耐热性，耐辐射性等优异的高质量碳化硅单晶，适用于电子和光学器件等，并且不显示多晶体和多晶型物的污染，无微孔缺陷和 可以有效地生产，而不会破裂等。
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6.发明授权
公开(公告)号：US5252250A
公开(公告)日：1993-10-12
申请号：US658709
申请日：1991-02-21
申请人： Shigeki Endo , Yuichi Ishino , Takayuki Maruyama , Tasuku Saito
发明人： Shigeki Endo , Yuichi Ishino , Takayuki Maruyama , Tasuku Saito
IPC分类号： C10M171/00 , C10M169/04
CPC分类号： C10M171/001
摘要： The present invention relates to an electrorheological fluid which is capable of increasing viscosity under an application of electric potential difference.An electrorheological fluid according to the present invention comprises dielectric particulates dispersed in a highly electrically insulating oily medium, in which the particulates are carbonaceous particulates having an atomic ratio of carbon atoms to hydrogen atoms (C/H) of 1.70-3.50 and an average particle size of from 0.01 to 100 .mu.m, and the oily medium is an electrical insulating oil having a dielectric constant of not less than 3 and a volume resistivity of not less than 10.sup.9 .OMEGA..multidot.cm.
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7.发明授权公开(公告)号：US07048798B2
公开(公告)日：2006-05-23
申请号：US10450151
申请日：2001-12-21
申请人： Takayuki Maruyama , Shigeki Endo
发明人： Takayuki Maruyama , Shigeki Endo
摘要： A method of producing a silicon carbide single crystal in which a sublimation raw material 40 is accommodated at the side of vessel body 12 in a graphite crucible 10, placing a seed crystal of a silicon carbide single crystal at the side of cover body 11 of the graphite crucible 10, the sublimation raw material 40 is sublimated by a first induction heating coil 21 placed at the side of sublimation raw material 40, a re-crystallization atmosphere is form by a second induction heating coil 20 placed at the side of cover body 11 so that the sublimation raw material 40 sublimated by the first induction heating coil 21 is re-crystallizable only in the vicinity of the seed crystal of a silicon carbide single crystal, and the sublimation raw material 40 is re-crystallized on the seed crystal of a silicon carbide single crystal, and a silicon carbide single crystal 60 is grown while keeping the whole surface of its growth surface in convex shape through the all growth processes.A high quality silicon carbide single crystal with large diameter excellent in dielectric breakdown property, heat resistance, radiation resistance and the like, suitable for electronic and optical devices and the like, and showing no contamination of polycrystals and polymorphs, no defect of micropipes and the like can be produced efficiently without cracking and the like.
摘要翻译： 一种生产碳化硅单晶的方法，其中升华原料40容纳在石墨坩埚10中的容器本体12侧，将碳化硅单晶的晶种放置在盖体11的侧面 石墨坩埚10中，升华原料40通过位于升华原料40一侧的第一感应加热线圈21而升华，通过设置在盖体11侧的第二感应加热线圈20形成再结晶气氛 使得由第一感应加热线圈21升华的升华原料40仅在碳化硅单晶的晶种附近再结晶，升华原料40在晶种上再结晶 碳化硅单晶和碳化硅单晶60生长，同时通过全部生长工艺将其生长表面的整个表面保持凸形。 具有优异的绝缘击穿性，耐热性，耐辐射性等优异的高质量碳化硅单晶，适用于电子和光学器件等，并且不显示多晶体和多晶型物的污染，无微孔缺陷和 可以有效地生产，而不会破裂等。
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8.发明授权Electro-rheological fluid having high dielectric breakdown stength and methods of making and storing the electro-rheological fluid 失效具有高介电击穿长度的电流变流体以及制造和储存电流变流体的方法公开(公告)号：US06277306B1
公开(公告)日：2001-08-21
申请号：US09200457
申请日：1998-11-27
申请人： Shigeki Endo , Takayuki Maruyama , Hiroaki Wada , Tasuku Saito
发明人： Shigeki Endo , Takayuki Maruyama , Hiroaki Wada , Tasuku Saito
IPC分类号： H01B320
CPC分类号： C10M171/001
摘要： An electro-rheological fluid made from an oil medium and fine particulates by mixing, is highly reliable and in which dielectric breakdown, such as generation of electrical discharge, is very low even when a high voltage is applied. A method of manufacturing the electro-rheological fluid and a method of storing the fluid are also provided. The electro-rheolological fluid includes fine particulates dispersed in an oil medium having an electric insulation property, and has a dielectric breakdown strength of 4 kV/mm or more. When the electro-rheological fluid is placed under a reduced pressure of 10 Pa, foaming does not occur. Alternatively, the electro-reheoleological fluid can contain 20% by volume or more of a gas contained in the oil medium that has a dielectric breakdown strength of 4 kV/mm or more.
摘要翻译： 由油介质和细粒子通过混合制成的电流变流体是高度可靠的，即使施加高电压，诸如放电产生的介质击穿也非常低。 还提供了制造电流变流体的方法和储存流体的方法。 电流变流体包括分散在具有电绝缘性的油介质中的细小颗粒，并且具有4kV / mm以上的介电击穿强度。 当电流变流体放置在10Pa的减压下时，不会发生起泡。 或者，电致液化流体可以含有介质击穿强度为4kV / mm以上的油介质中所含的20体积％以上的气体。
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公开(公告)号：US5087382A
公开(公告)日：1992-02-11
申请号：US400134
申请日：1989-08-29
申请人： Yuichi Ishino , Toshiyuki Osaki , Shigeki Endo , Seisuke Tomita , Takayuki Maruyama , Yoshiki Fukuyama , Tasuku Saito
发明人： Yuichi Ishino , Toshiyuki Osaki , Shigeki Endo , Seisuke Tomita , Takayuki Maruyama , Yoshiki Fukuyama , Tasuku Saito
IPC分类号： C10M171/00
CPC分类号： C10M171/001
摘要： The electroviscous fluid is a suspension composed of a finely divided dielectric solid dispersed in an electrically nonconductive oil. The viscosity of the fluid increases swiftly and reversibly under an influence of electric field applied thereto and the fluid turns to a state of plastic or solid when the influence is sufficiently strong.The electroviscous fluid of the present invention comprises 1-60% by weight of a dispersed phase of carbonaceous particulates having average particle size of 0.01-100 micrometer, and 99-40% by weight of a continuous liquid phase of an electric insulating oil having a viscosity of 0.65-500 centistokes at room temperature.The electroviscous fluid exhibits an excellent electroviscous effect even at a high temperature with a low electric power consumption together with maintaining the improved electroviscous effect for a long period of time.
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公开(公告)号：US20110038884A1
公开(公告)日：2011-02-17
申请号：US12989868
申请日：2009-04-27
IPC分类号： A61K39/00 , A61P37/04 , A61P31/00 , A61P35/00 , A61P31/04 , A61P31/12 , A61P31/10 , A61P31/16
CPC分类号： A61K39/00 , A61K31/5575 , A61K39/39
摘要： An EP1 agonist has an immunopotentiating effect mediated by cytotoxic T lymphocyte activation and/or natural killer cell activation, and is thus useful for the prevention and/or treatment of cancers, microbial infectious diseases and the like.
摘要翻译： EP1激动剂具有由细胞毒性T淋巴细胞活化和/或自然杀伤细胞活化介导的免疫增强作用，因此可用于预防和/或治疗癌症，微生物感染性疾病等。
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