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公开(公告)号：US07994008B2
公开(公告)日：2011-08-09
申请号：US11698755
申请日：2007-01-26
IPC分类号： H01L21/336
CPC分类号： H01L29/66772 , H01L27/1203 , H01L29/78648
摘要： A planar transistor device includes two independent gates (a first and second gates) along with a semiconductor channel lying between the gates. The semiconductor channel is formed of a first material. The channel includes opposed ends comprising dielectric zone with a channel region positioned between the gates. The dielectric zones comprises an oxide of the first material.
摘要翻译： 平面晶体管器件包括两个独立的栅极（第一和第二栅极）以及位于栅极之间的半导体沟道。 半导体通道由第一材料形成。 通道包括相对的端部，其包括介电区域，沟道区域位于栅极之间。 介电区包括第一材料的氧化物。
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2.发明授权Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor 有权在集成电路的区域，特别是在晶体管的电极上产生接触焊盘的工艺公开(公告)号：US07601634B2
公开(公告)日：2009-10-13
申请号：US11250641
申请日：2005-10-14
申请人： Damien Lenoble , Philippe Coronel , Robin Cerutti
发明人： Damien Lenoble , Philippe Coronel , Robin Cerutti
IPC分类号： H01L21/4763
CPC分类号： H01L21/76805 , H01L21/26506 , H01L21/28061 , H01L21/76814 , H01L23/485 , H01L29/66545 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A region is locally modified so as to create a zone that extends as far as at least part of the surface of the region and is formed from a material that can be removed selectively with respect to the material of the region. The region is then covered with an insulating material. An orifice is formed in the insulating material emerging at the surface of the zone. The selectively removable material is removed from the zone through the orifice so as to form a cavity in place of the zone. The cavity and the orifice are then filled with at least one electrically conducting material so as to form a contact pad.
摘要翻译： 局部地修改区域，以便产生延伸至该区域表面的至少一部分的区域，并且由相对于该区域的材料选择性地移除的材料形成。 然后用绝缘材料覆盖该区域。 在出现在区域表面的绝缘材料中形成孔口。 可选择性地移除的材料通过孔口从区域移除，以便形成空腔而不是区域。 然后用至少一个导电材料填充空腔和孔，以便形成接触垫。
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3.发明授权Process for producing a contact pad on a region of an integrated circuit, in particular on the electrodes of a transistor 有权在集成电路的区域，特别是在晶体管的电极上产生接触焊盘的工艺公开(公告)号：US08299541B2
公开(公告)日：2012-10-30
申请号：US12538723
申请日：2009-08-10
申请人： Damien Lenoble , Philippe Coronel , Robin Cerutti
发明人： Damien Lenoble , Philippe Coronel , Robin Cerutti
IPC分类号： H01L21/02
CPC分类号： H01L21/76805 , H01L21/26506 , H01L21/28061 , H01L21/76814 , H01L23/485 , H01L29/66545 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A region is locally modified so as to create a zone that extends as far as at least part of the surface of the region and is formed from a material that can be removed selectively with respect to the material of the region. The region is then covered with an insulating material. An orifice is formed in the insulating material emerging at the surface of the zone. The selectively removable material is removed from the zone through the orifice so as to form a cavity in place of the zone. The cavity and the orifice are then filled with at least one electrically conducting material so as to form a contact pad.
摘要翻译： 局部地修改区域，以便产生延伸至该区域表面的至少一部分的区域，并且由相对于该区域的材料选择性地移除的材料形成。 然后用绝缘材料覆盖该区域。 在出现在区域表面的绝缘材料中形成孔口。 可选择性地移除的材料通过孔口从区域移除，以便形成空腔而不是区域。 然后用至少一个导电材料填充空腔和孔，以便形成接触垫。
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4.发明申请PROCESS FOR PRODUCING A CONTACT PAD ON A REGION OF AN INTEGRATED CIRCUIT, IN PARTICULAR ON THE ELECTRODES OF A TRANSISTOR 有权在集成电路区域生产接触片的方法，特别是在晶体管的电极上公开(公告)号：US20100025773A1
公开(公告)日：2010-02-04
申请号：US12538723
申请日：2009-08-10
申请人： Damien Lenoble , Philippe Coronel , Robin Cerutti
发明人： Damien Lenoble , Philippe Coronel , Robin Cerutti
IPC分类号： H01L29/78 , H01L29/73 , H01L23/532
CPC分类号： H01L21/76805 , H01L21/26506 , H01L21/28061 , H01L21/76814 , H01L23/485 , H01L29/66545 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A region is locally modified so as to create a zone that extends as far as at least part of the surface of the region and is formed from a material that can be removed selectively with respect to the material of the region. The region is then covered with an insulating material. An orifice is formed in the insulating material emerging at the surface of the zone. The selectively removable material is removed from the zone through the orifice so as to form a cavity in place of the zone. The cavity and the orifice are then filled with at least one electrically conducting material so as to form a contact pad.
摘要翻译： 局部地修改区域，以便产生延伸至该区域表面的至少一部分的区域，并且由相对于该区域的材料选择性地移除的材料形成。 然后用绝缘材料覆盖该区域。 在出现在区域表面的绝缘材料中形成孔口。 可选择性地移除的材料通过孔口从区域移除，以便形成空腔而不是区域。 然后用至少一个导电材料填充空腔和孔，以便形成接触垫。
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公开(公告)号：US20070194355A1
公开(公告)日：2007-08-23
申请号：US11698755
申请日：2007-01-26
IPC分类号： H01L29/76
CPC分类号： H01L29/66772 , H01L27/1203 , H01L29/78648
摘要： A planar transistor device includes two independent gates (a first and second gates) along with a semiconductor channel lying between the gates. The semiconductor channel is formed of a first material. The channel includes opposed ends comprising dielectric zone with a channel region positioned between the gates. The dielectric zones comprises an oxide of the first material.
摘要翻译： 平面晶体管器件包括两个独立的栅极（第一和第二栅极）以及位于栅极之间的半导体沟道。 半导体通道由第一材料形成。 通道包括相对的端部，其包括介电区域，沟道区域位于栅极之间。 介电区包括第一材料的氧化物。
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公开(公告)号：US20060091477A1
公开(公告)日：2006-05-04
申请号：US11250641
申请日：2005-10-14
申请人： Damien Lenoble , Philippe Coronel , Robin Cerutti
发明人： Damien Lenoble , Philippe Coronel , Robin Cerutti
IPC分类号： H01L29/76
CPC分类号： H01L21/76805 , H01L21/26506 , H01L21/28061 , H01L21/76814 , H01L23/485 , H01L29/66545 , H01L29/66636 , H01L2924/0002 , H01L2924/00
摘要： A region is locally modified so as to create a zone that extends as far as at least part of the surface of the region and is formed from a material that can be removed selectively with respect to the material of the region. The region is then covered with an insulating material. An orifice is formed in the insulating material emerging at the surface of the zone. The selectively removable material is removed from the zone through the orifice so as to form a cavity in place of the zone. The cavity and the orifice are then filled with at least one electrically conducting material so as to form a contact pad.
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公开(公告)号：US20050085026A1
公开(公告)日：2005-04-21
申请号：US10960436
申请日：2004-10-07
申请人： Stephane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillet-Beranger
发明人： Stephane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillet-Beranger
IPC分类号： H01L21/762 , H01L21/00 , H01L21/8234 , H01L21/84
CPC分类号： H01L21/76202 , H01L21/76251 , H01L29/66772 , H01L29/78603 , H01L29/78606
摘要： A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.
摘要翻译： 硅上的绝缘体上的单晶硅区域旨在接收至少一个元件，绝缘体具有厚度。
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公开(公告)号：US07638844B2
公开(公告)日：2009-12-29
申请号：US11713553
申请日：2007-03-02
申请人： Stéphane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillett-Beranger
发明人： Stéphane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillett-Beranger
CPC分类号： H01L21/76202 , H01L21/76251 , H01L29/66772 , H01L29/78603 , H01L29/78606
摘要： A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.
摘要翻译： 硅上的绝缘体上的单晶硅区域旨在接收至少一个元件，绝缘体具有厚度。
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公开(公告)号：US20080087959A1
公开(公告)日：2008-04-17
申请号：US11713553
申请日：2007-03-02
申请人： Stephane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillet-Beranger
发明人： Stephane Monfray , Aomar Halimaoui , Philippe Coronel , Damien Lenoble , Claire Fenouillet-Beranger
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L21/76202 , H01L21/76251 , H01L29/66772 , H01L29/78603 , H01L29/78606
摘要： A single-crystal silicon region on insulator on silicon intended to receive at least one component, the insulator having overthicknesses.
摘要翻译： 硅上的绝缘体上的单晶硅区域旨在接收至少一个元件，绝缘体具有厚度。
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公开(公告)号：US20050212018A1
公开(公告)日：2005-09-29
申请号：US11135172
申请日：2005-05-23
IPC分类号： H01L21/74 , H01L21/762 , H01L21/765 , H01L21/768 , H01L21/8244 , H01L23/485 , H01L23/528 , H01L23/535 , H01L27/11 , H01L29/78 , H01L29/76
CPC分类号： H01L21/743 , H01L21/76224 , H01L21/765 , H01L21/76802 , H01L21/76838 , H01L21/76895 , H01L23/485 , H01L23/5286 , H01L23/535 , H01L27/11 , H01L27/1104 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit comprising a semiconductor substrate in which active areas surround or are surrounded by hollowings filled with an insulator, and in which a conductive region is embedded in the insulator of at least one hollowing, the conductive region being connected to a reference voltage and being connected at least one neighboring element of the circuit.
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