公开(公告)号：US08102174B2

公开(公告)日：2012-01-24

申请号：US12361731

申请日：2009-01-29

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01R33/12

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US06927569B2

公开(公告)日：2005-08-09

申请号：US10244766

申请日：2002-09-16

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01Q70/00 ,  G01R31/26 ,  G01R33/09 ,  G01R33/12

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US08004278B2

公开(公告)日：2011-08-23

申请号：US12539080

申请日：2009-08-11

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01R33/12

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

公开(公告)号：US07622735B2

公开(公告)日：2009-11-24

申请号：US11119665

申请日：2005-05-02

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： H01L21/66

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US20090267597A1

公开(公告)日：2009-10-29

申请号：US12361731

申请日：2009-01-29

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01R33/12 ,  G01B7/06 ,  G01R33/09 ,  G01R31/26

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US20090261820A1

公开(公告)日：2009-10-22

申请号：US11119665

申请日：2005-05-02

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01R33/12 ,  H01L23/52

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US08027185B2

公开(公告)日：2011-09-27

申请号：US12539068

申请日：2009-08-11

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G11C11/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US20100023287A1

公开(公告)日：2010-01-28

申请号：US12539068

申请日：2009-08-11

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G06F19/00 ,  G01R27/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US20090309587A1

公开(公告)日：2009-12-17

申请号：US12539080

申请日：2009-08-11

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01R33/14

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

公开(公告)号：US08358153B2

公开(公告)日：2013-01-22

申请号：US12783208

申请日：2010-05-19

申请人： Daniel Christopher Worledge ,  David William Abraham

发明人： Daniel Christopher Worledge ,  David William Abraham

IPC分类号： H03K19/20 ,  G11C19/08 ,  G06F7/50

CPC分类号： H03K19/168 ,  H03K19/20

摘要： A magnetic circuit in one aspect comprises a plurality of tapered magnetic wires each having a relatively wide input end and a relatively narrow output end, with the output end of a first one of the tapered magnetic wires being coupled to the input end of a second one of the tapered magnetic wires. Each of the tapered magnetic wires is configured to propagate a magnetic domain wall along a length of the wire in a direction of decreasing width from its input end to its output end. In an illustrative embodiment, the magnetic circuit comprises a logic buffer that includes at least one heating element. The heating element may be controlled to facilitate transfer of a magnetic moment from the output end of the first tapered magnetic wire to the input end of the second tapered magnetic wire.

摘要翻译： 一个方面的磁路包括多个锥形磁线，每个锥形磁线具有相对宽的输入端和相对窄的输出端，第一个锥形磁线的输出端与第二个的输入端耦合 的锥形磁线。 每个锥形磁线被配置成沿着线的长度沿着从输入端到其输出端的宽度减小的方向传播磁畴壁。 在说明性实施例中，磁路包括包括至少一个加热元件的逻辑缓冲器。 可以控制加热元件，以便将磁矩从第一锥形磁线的输出端传递到第二锥形磁线的输入端。