公开(公告)号：US08004278B2

公开(公告)日：2011-08-23

申请号：US12539080

申请日：2009-08-11

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01R33/12

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

公开(公告)号：US07622735B2

公开(公告)日：2009-11-24

申请号：US11119665

申请日：2005-05-02

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： H01L21/66

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US20090267597A1

公开(公告)日：2009-10-29

申请号：US12361731

申请日：2009-01-29

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01R33/12 ,  G01B7/06 ,  G01R33/09 ,  G01R31/26

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US20090261820A1

公开(公告)日：2009-10-22

申请号：US11119665

申请日：2005-05-02

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01R33/12 ,  H01L23/52

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US08102174B2

公开(公告)日：2012-01-24

申请号：US12361731

申请日：2009-01-29

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01R33/12

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US06927569B2

公开(公告)日：2005-08-09

申请号：US10244766

申请日：2002-09-16

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01Q70/00 ,  G01R31/26 ,  G01R33/09 ,  G01R33/12

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US08027185B2

公开(公告)日：2011-09-27

申请号：US12539068

申请日：2009-08-11

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G11C11/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US20100023287A1

公开(公告)日：2010-01-28

申请号：US12539068

申请日：2009-08-11

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G06F19/00 ,  G01R27/00

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

摘要翻译： 探针电连接到包括自由层，隧道势垒和钉扎层的隧道结膜堆叠的表面。 针对各种探针间距和堆叠层之一的多次磁化确定了电阻。 探头间距是距离隧道结膜叠层的电阻 - 面积（RA）乘积的长度尺度的距离。 使用从尽可能小到约40倍长度尺度的间距。 有利地，在电阻测量期间使用的探针之间的最小间距小于100微米。 从该层的两次磁化发生的“高”和“低”电阻确定测量的面内磁阻（MR）曲线。 通过曲线拟合来确定RA乘积，每平方的自由和被钉扎层的电阻和垂直MR。

公开(公告)号：US20090309587A1

公开(公告)日：2009-12-17

申请号：US12539080

申请日：2009-08-11

申请人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

发明人： Daniel Christopher Worledge ,  Philip Louis Trouilloud ,  David William Abraham ,  Joerg Dietrich Schmid

IPC分类号： G01R33/14

CPC分类号： G01R33/093 ,  B82Y25/00 ,  G01R31/2648 ,  G01R33/098 ,  Y10S977/852 ,  Y10S977/854

摘要： Probes are electrically connected to a surface of a tunnel junction film stack comprising a free layer, a tunnel barrier, and a pinned layer. Resistances are determined for a variety of probe spacings and for a number of magnetizations of one of the layers of the stack. The probe spacings are a distance from a length scale, which is related to the Resistance-Area (RA) product of the tunnel junction film stack. Spacings from as small as possible to about 40 times the length scale are used. Beneficially, the smallest spacing between probes used during a resistance measurement is under 100 microns. A measured in-plane MagnetoResistance (MR) curve is determined from the “high” and “low” resistances that occur at the two magnetizations of this layer. The RA product, resistances per square of the free and pinned layers, and perpendicular MR are determined through curve fitting.

公开(公告)号：US20080079047A1

公开(公告)日：2008-04-03

申请号：US11541630

申请日：2006-09-29

申请人： Joerg Dietrich Schmid

发明人： Joerg Dietrich Schmid

IPC分类号： H01L29/94

CPC分类号： G11C13/0033 ,  G11C8/12 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C13/0004 ,  G11C13/0011 ,  G11C2213/77

摘要： In an embodiment of the invention a memory device is provided including a plurality of memory cells, each of which comprises a first electrode, a second electrode and an active material arranged between the first electrode and the second electrode, the first electrodes being arranged parallel to each other and which are isolated against each other, and the memory cells being grouped into memory cell groups, each memory cell group defining a memory cell group area and being configured such that corresponding first electrodes are individually addressable via the first electrodes, and corresponding second electrodes are commonly addressable via a common select device arranged within the memory cell group area of the memory cell group.

摘要翻译： 在本发明的实施例中，提供了一种存储器件，其包括多个存储单元，每个存储单元包括布置在第一电极和第二电极之间的第一电极，第二电极和活性材料，第一电极平行于 彼此隔离并且彼此隔离，并且存储器单元被分组成存储单元组，每个存储单元组限定存储单元组区域，并且被配置为使得相应的第一电极可经由第一电极单独寻址，并且对应的第二 电极通常可通过布置在存储单元组的存储单元组区域内的公共选择装置来寻址。