公开(公告)号：US20050247265A1

公开(公告)日：2005-11-10

申请号：US10828614

申请日：2004-04-21

申请人： Daniel Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

发明人： Daniel Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/6719

摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations . An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

摘要翻译： 多工件室包括至少两个处理站，用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

公开(公告)号：US08066815B2

公开(公告)日：2011-11-29

申请号：US11839527

申请日：2007-08-15

申请人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

发明人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6719

摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

摘要翻译： 多工件室包括至少两个处理站，用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

公开(公告)号：US07276122B2

公开(公告)日：2007-10-02

申请号：US10828614

申请日：2004-04-21

申请人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

发明人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6719

摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

摘要翻译： 多工件室包括至少两个处理站，用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

公开(公告)号：US20070281085A1

公开(公告)日：2007-12-06

申请号：US11839527

申请日：2007-08-15

申请人： Daniel Devine ,  Rene George ,  Ce Oin ,  Dixit Desai

发明人： Daniel Devine ,  Rene George ,  Ce Oin ,  Dixit Desai

IPC分类号： C23C16/00

CPC分类号： H01L21/6719

摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

摘要翻译： 多工件室包括至少两个处理站，用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 该分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

公开(公告)号：US09184072B2

公开(公告)日：2015-11-10

申请号：US11829258

申请日：2007-07-27

申请人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

发明人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

IPC分类号： B01J19/08 ,  B23P17/04 ,  H01L21/67

CPC分类号： H01L21/6719 ,  H01L21/67069 ,  Y10T29/49

摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.

摘要翻译： 描述了用于在处理过程中处理工件的装置和方法。 多晶片室限定腔室内部，其包括腔室内部的至少两个处理站，使得处理站共享腔室内部。 每个处理站包括等离子体源和用于使用相应的等离子体源将工件中的一个暴露于处理过程的工件基座。 腔室包括一个或多个导电表面的布置，其以在每个加工工位上围绕工件不对称地设置，以在每个工件的主表面上产生给定水平的处理工艺的均匀性。 屏蔽装置提供了工件对等离子体源的相对一个的曝光增强的均匀性，其大于在没有屏蔽装置的情况下提供的给定的均匀度水平。

公开(公告)号：US20090028761A1

公开(公告)日：2009-01-29

申请号：US11829258

申请日：2007-07-27

申请人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

发明人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

IPC分类号： B01J19/08 ,  B23P17/04

CPC分类号： H01L21/6719 ,  H01L21/67069 ,  Y10T29/49

摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.

摘要翻译： 描述了用于在处理过程中处理工件的装置和方法。 多晶片室限定腔室内部，其包括腔室内部的至少两个处理站，使得处理站共享腔室内部。 每个处理站包括等离子体源和用于使用相应的等离子体源将工件中的一个暴露于处理过程的工件基座。 腔室包括一个或多个导电表面的布置，其以在每个加工工位上围绕工件不对称地设置，以在每个工件的主表面上产生给定水平的处理工艺的均匀性。 屏蔽装置提供了工件对等离子体源的相对一个的曝光增强的均匀性，其大于在没有屏蔽装置的情况下提供的给定的均匀度水平。