公开(公告)号：US08066815B2

公开(公告)日：2011-11-29

申请号：US11839527

申请日：2007-08-15

申请人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

发明人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6719

摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

摘要翻译： 多工件室包括至少两个处理站，用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

公开(公告)号：US07276122B2

公开(公告)日：2007-10-02

申请号：US10828614

申请日：2004-04-21

申请人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

发明人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6719

摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

摘要翻译： 多工件室包括至少两个处理站，用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

公开(公告)号：US09184072B2

公开(公告)日：2015-11-10

申请号：US11829258

申请日：2007-07-27

申请人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

发明人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

IPC分类号： B01J19/08 ,  B23P17/04 ,  H01L21/67

CPC分类号： H01L21/6719 ,  H01L21/67069 ,  Y10T29/49

摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.

摘要翻译： 描述了用于在处理过程中处理工件的装置和方法。 多晶片室限定腔室内部，其包括腔室内部的至少两个处理站，使得处理站共享腔室内部。 每个处理站包括等离子体源和用于使用相应的等离子体源将工件中的一个暴露于处理过程的工件基座。 腔室包括一个或多个导电表面的布置，其以在每个加工工位上围绕工件不对称地设置，以在每个工件的主表面上产生给定水平的处理工艺的均匀性。 屏蔽装置提供了工件对等离子体源的相对一个的曝光增强的均匀性，其大于在没有屏蔽装置的情况下提供的给定的均匀度水平。

公开(公告)号：US20090028761A1

公开(公告)日：2009-01-29

申请号：US11829258

申请日：2007-07-27

申请人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

发明人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

IPC分类号： B01J19/08 ,  B23P17/04

CPC分类号： H01L21/6719 ,  H01L21/67069 ,  Y10T29/49

摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.

摘要翻译： 描述了用于在处理过程中处理工件的装置和方法。 多晶片室限定腔室内部，其包括腔室内部的至少两个处理站，使得处理站共享腔室内部。 每个处理站包括等离子体源和用于使用相应的等离子体源将工件中的一个暴露于处理过程的工件基座。 腔室包括一个或多个导电表面的布置，其以在每个加工工位上围绕工件不对称地设置，以在每个工件的主表面上产生给定水平的处理工艺的均匀性。 屏蔽装置提供了工件对等离子体源的相对一个的曝光增强的均匀性，其大于在没有屏蔽装置的情况下提供的给定的均匀度水平。

公开(公告)号：US20090206056A1

公开(公告)日：2009-08-20

申请号：US12367488

申请日：2009-02-06

申请人： Songlin Xu ,  Daniel J. Devine ,  Wen Ma ,  Ce Qin ,  Vijay Vaniapura

发明人： Songlin Xu ,  Daniel J. Devine ,  Wen Ma ,  Ce Qin ,  Vijay Vaniapura

IPC分类号： C23F1/00 ,  C23F1/08 ,  B05C11/00 ,  C23C16/52

CPC分类号： H01J37/32449 ,  H01J37/3244

摘要： A multi-station workpiece processing system provides a targeted equal share of a regulated input process gas flow to each active processing station of a plurality of active processing stations using a single gas flow regulator for each gas and irrespective of the number of inactive processing stations.

摘要翻译： 多工位工件处理系统使用单个气体流量调节器为每个气体提供对多个有效处理站的每个主动处理站的调节输入处理气体流量的目标相等份额，而不考虑非活动处理站的数量。

公开(公告)号：US08413604B2

公开(公告)日：2013-04-09

申请号：US11564134

申请日：2006-11-28

申请人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

发明人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32431 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/6715 ,  H05H1/46

摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

摘要翻译： 实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。 槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。 描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。 电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

公开(公告)号：US07232767B2

公开(公告)日：2007-06-19

申请号：US10803453

申请日：2004-03-18

申请人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

发明人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

IPC分类号： H01L21/302

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32431 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/6715 ,  H05H1/46

摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

摘要翻译： 实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。 槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。 描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。 电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

公开(公告)号：US20100193501A1

公开(公告)日：2010-08-05

申请号：US12696119

申请日：2010-01-29

申请人： Martin L. Zucker ,  Daniel J. Devine ,  Young Jai Lee

发明人： Martin L. Zucker ,  Daniel J. Devine ,  Young Jai Lee

IPC分类号： H05B3/68

CPC分类号： H01L21/6831 ,  H01L21/67248 ,  H02N1/08

摘要： An electrostatic chuck system for maintaining a desired temperature profile across the surface of the substrate is disclosed. The electrostatic chuck system includes a pedestal support defining a substantially uniform temperature profile across the surface of the pedestal support and an electrostatic chuck supported by the pedestal support. The electrostatic chuck has a clamping electrode and a plurality of independently controlled heating electrodes. The independently controlled heating electrodes include an inner heating electrode defining an inner heating zone and a peripheral heating electrode defining a peripheral heating zone separated by a gap distance. The temperature profile across the surface of the substrate can be tuned by varying thermal characteristics of the pedestal thermal zone, the inner heating zone, the peripheral heating zone, or by varying the size of the gap distance between the inner heating electrode and the peripheral heating electrode.

摘要翻译： 公开了一种用于在衬底的表面上保持所需温度分布的静电吸盘系统。 静电吸盘系统包括基座支撑件，其限定跨越基座支撑件的表面的基本上均匀的温度曲线以及由基座支撑件支撑的静电卡盘。 静电卡盘具有夹持电极和多个独立控制的加热电极。 独立控制的加热电极包括限定内部加热区域的内部加热电极和限定由间隙距离隔开的外围加热区域的外围加热电极。 通过改变基座热区，内部加热区，周边加热区的热特性，或者通过改变内部加热电极和周边加热之间的间隙距离的大小来调节衬底表面上的温度分布 电极。

公开(公告)号：US5952781A

公开(公告)日：1999-09-14

申请号：US38709

申请日：1998-03-09

申请人： Hong Wang ,  Daniel J. Devine

发明人： Hong Wang ,  Daniel J. Devine

IPC分类号： H01J9/20 ,  H01J11/12 ,  H01J11/22 ,  H01J61/00

CPC分类号： H01J11/12 ,  H01J11/22 ,  H01J9/20 ,  H01J2211/225 ,  H01J2211/444

摘要： A Cr--C--F crystalline film was found to be suitable for use as a black matrix layer for use in conjunction with a Cr/Cu/Cr PDP electrode. Furthermore, film stack including the foregoing Cr--C--F layer, a gradated Cr--C--F transition layer and a pure Cr film can be formed in an integrated sputter deposition process and can be used as a black matrix/adhesion layers in PDP Cu electrode.

摘要翻译： 发现Cr-C-F结晶膜适用于与Cr / Cu / Cr PDP电极结合使用的黑色矩阵层。 此外，可以在集成溅射沉积工艺中形成包括上述Cr-C-F层，渐变Cr-C-F过渡层和纯Cr膜的膜堆叠，并且可以用作PDP Cu电极中的黑色矩阵/粘附层。

公开(公告)号：US07972444B2

公开(公告)日：2011-07-05

申请号：US11936576

申请日：2007-11-07

申请人： Martin L. Zucker ,  Daniel J. Devine ,  Vladimir Nagorny ,  Jonathan Mohn

发明人： Martin L. Zucker ,  Daniel J. Devine ,  Vladimir Nagorny ,  Jonathan Mohn

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/68 ,  C23C14/50 ,  C23C14/541 ,  C23C16/4586 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/67109 ,  H01L21/67248

摘要： A workpiece support is disclosed defining a workpiece-receiving surface. The workpiece support includes a plurality of fluid zones. A fluid, such as a gas, is fed to the fluid zones for contact with a workpiece on the workpiece support. The fluid can have selected thermoconductivity characteristics for controlling the temperature of the workpiece at particular locations. In accordance with the present disclosure, at least certain of the fluid zones are at different azimuthal positions. In this manner, the temperature of the workpiece can be adjusted not only in a radial direction but also in an angular direction.

摘要翻译： 公开了一种限定工件接收表面的工件支撑件。 工件支撑件包括多个流体区域。 诸如气体的流体被供给到流体区域中以与工件支撑件上的工件接触。 流体可以具有选择的热传导特性，用于在特定位置控制工件的温度。 根据本公开，至少某些流体区域处于不同的方位位置。 以这种方式，工件的温度不仅可以在径向方向上而且在角度方向上进行调节。