公开(公告)号：US20050247265A1

公开(公告)日：2005-11-10

申请号：US10828614

申请日：2004-04-21

申请人： Daniel Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

发明人： Daniel Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

IPC分类号： C23C16/00 ,  H01L21/00

CPC分类号： H01L21/6719

摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations . An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

摘要翻译： 多工件室包括至少两个处理站，用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

公开(公告)号：US08066815B2

公开(公告)日：2011-11-29

申请号：US11839527

申请日：2007-08-15

申请人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

发明人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6719

摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

摘要翻译： 多工件室包括至少两个处理站，用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

公开(公告)号：US07276122B2

公开(公告)日：2007-10-02

申请号：US10828614

申请日：2004-04-21

申请人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

发明人： Daniel J. Devine ,  Rene George ,  Ce Qin ,  Dixit Desai

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6719

摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

摘要翻译： 多工件室包括至少两个处理站，用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

公开(公告)号：US20070281085A1

公开(公告)日：2007-12-06

申请号：US11839527

申请日：2007-08-15

申请人： Daniel Devine ,  Rene George ,  Ce Oin ,  Dixit Desai

发明人： Daniel Devine ,  Rene George ,  Ce Oin ,  Dixit Desai

IPC分类号： C23C16/00

CPC分类号： H01L21/6719

摘要： A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

摘要翻译： 多工件室包括至少两个处理站，用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 该分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分，这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造，其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置，用于建立过程相关产品的修改的交换特征。

公开(公告)号：US20090028761A1

公开(公告)日：2009-01-29

申请号：US11829258

申请日：2007-07-27

申请人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

发明人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

IPC分类号： B01J19/08 ,  B23P17/04

CPC分类号： H01L21/6719 ,  H01L21/67069 ,  Y10T29/49

摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.

摘要翻译： 描述了用于在处理过程中处理工件的装置和方法。 多晶片室限定腔室内部，其包括腔室内部的至少两个处理站，使得处理站共享腔室内部。 每个处理站包括等离子体源和用于使用相应的等离子体源将工件中的一个暴露于处理过程的工件基座。 腔室包括一个或多个导电表面的布置，其以在每个加工工位上围绕工件不对称地设置，以在每个工件的主表面上产生给定水平的处理工艺的均匀性。 屏蔽装置提供了工件对等离子体源的相对一个的曝光增强的均匀性，其大于在没有屏蔽装置的情况下提供的给定的均匀度水平。

公开(公告)号：US09184072B2

公开(公告)日：2015-11-10

申请号：US11829258

申请日：2007-07-27

申请人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

发明人： Daniel J. Devine ,  Charles Crapuchettes ,  Dixit Desai ,  Rene George ,  Vincent C. Lee ,  Yuya Matsuda ,  Jonathan Mohn ,  Ryan M. Pakulski ,  Stephen E. Savas ,  Martin Zucker

IPC分类号： B01J19/08 ,  B23P17/04 ,  H01L21/67

CPC分类号： H01L21/6719 ,  H01L21/67069 ,  Y10T29/49

摘要： An apparatus and method are described for processing workpieces in a treatment process. A multi-wafer chamber defines a chamber interior including at least two processing stations within the chamber interior such that the processing stations share the chamber interior. Each processing station includes a plasma source and a workpiece pedestal for exposing one of the workpieces to the treatment process using a respective plasma source. The chamber includes an arrangement of one or more electrically conductive surfaces that are asymmetrically disposed about the workpiece at each processing station in a way which produces a given level of uniformity of the treatment process on a major surface of each workpiece. A shield arrangement provides an enhanced uniformity of exposure of the workpiece to the respective one of the plasma sources that is greater than the given level of uniformity that would be provided in an absence of the shield arrangement.

摘要翻译： 描述了用于在处理过程中处理工件的装置和方法。 多晶片室限定腔室内部，其包括腔室内部的至少两个处理站，使得处理站共享腔室内部。 每个处理站包括等离子体源和用于使用相应的等离子体源将工件中的一个暴露于处理过程的工件基座。 腔室包括一个或多个导电表面的布置，其以在每个加工工位上围绕工件不对称地设置，以在每个工件的主表面上产生给定水平的处理工艺的均匀性。 屏蔽装置提供了工件对等离子体源的相对一个的曝光增强的均匀性，其大于在没有屏蔽装置的情况下提供的给定的均匀度水平。

公开(公告)号：US20050205210A1

公开(公告)日：2005-09-22

申请号：US11030362

申请日：2005-01-05

申请人： Daniel Devine ,  Rene George ,  Ryan Pakulski ,  David Barker

发明人： Daniel Devine ,  Rene George ,  Ryan Pakulski ,  David Barker

IPC分类号： B65G49/07 ,  C03C25/68 ,  C23C16/00 ,  C23C16/455 ,  C23C16/54 ,  C23F1/00 ,  G03F7/42 ,  H01L21/00 ,  H01L21/677

CPC分类号： H01J37/32743 ,  C23C16/45557 ,  C23C16/54 ,  G03F7/427 ,  H01J37/32935 ,  H01L21/67017 ,  H01L21/67196 ,  H01L21/67748

摘要： Workpiece processing uses a transfer chamber in cooperation with a process chamber. The workpiece is to be heated to a treatment temperature, at a preheating pressure, and subsequently exposed to a plasma at a treatment pressure, which is less than the preheating pressure. The process chamber pressure does not exceed the preheating pressure, yet very rapid pressure increases can be induced in the process chamber in transitioning from the treatment pressure to the preheating pressure. The transfer chamber pressure can be maintained at the treatment pressure, the preheating pressure or raised to a selected pressure to backfill the process chamber to the preheating pressure. A backfill arrangement can selectively induce rapid pressure increases in the process chamber. A bypass arrangement provides selective pressure communication between the transfer and process chambers and can be used for backfilling the process chamber from the transfer chamber.

摘要翻译： 工件处理使用与处理室协作的传送室。 将工件在预热压力下加热至处理温度，随后在小于预热压力的处理压力下暴露于等离子体。 处理室压力不超过预热压力，但是在处理室中从处理压力转换到预热压力可以引起非常快速的压力增加。 传送室压力可以保持在处理压力，预热压力或升高到选定的压力，以将处理室回填至预热压力。 回填装置可以选择性地引起处理室中的快速压力增加。 旁路装置提供转移和处理室之间的选择性压力连通，并且可用于从传送室回填处理室。

公开(公告)号：US20070113979A1

公开(公告)日：2007-05-24

申请号：US11564134

申请日：2006-11-28

申请人： Rene George ,  Andreas Kadavanich ,  Daniel Devine ,  Stephen Savas ,  John Zajac ,  Hongching Shan

发明人： Rene George ,  Andreas Kadavanich ,  Daniel Devine ,  Stephen Savas ,  John Zajac ,  Hongching Shan

IPC分类号： C23F1/00 ,  C23C16/00

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32431 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/6715 ,  H05H1/46

摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

摘要翻译： 实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。 槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。 描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。 电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。

公开(公告)号：US20070012251A1

公开(公告)日：2007-01-18

申请号：US11478203

申请日：2006-06-29

申请人： Martin Zucker ,  Daniel Devine ,  Rene George ,  Josef Hoog ,  Vincent Lee

发明人： Martin Zucker ,  Daniel Devine ,  Rene George ,  Josef Hoog ,  Vincent Lee

IPC分类号： C23C16/00 ,  H01L21/306

CPC分类号： H01L21/67126 ,  C23C16/4409 ,  H01J37/32477

摘要： A guard barrier arrangement is used in an O-ring seal arrangement to limit reactive species in coming into contact with an O-ring. The arrangement is supported in a chamber passage for exposure to the reactive species. An o-ring is compressed so as to peripherally resiliently bias the guard ring arrangement further into the chamber passage configuration toward the chamber interior to limit access of the reactive species to the o-ring. The passage configuration can use a narrowing surface arrangement against which the barrier arrangement is urged. The barrier can include an annular configuration that can change responsive to being biased into the chamber passage configuration.

摘要翻译： 在O形环密封装置中使用防护装置以限制与O型圈接触的反应物质。 该装置支撑在用于暴露于反应物种的室通道中。 O形环被压缩，以便将保护环装置的外围弹性偏置进入腔室通道构造中朝向室内部，以限制反应物质进入O形环。 通道构造可以使用阻挡装置被推动的窄的表面布置。 阻挡层可以包括响应于被偏压到腔室通道构造中而改变的环形构型。

公开(公告)号：US08413604B2

公开(公告)日：2013-04-09

申请号：US11564134

申请日：2006-11-28

申请人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

发明人： Rene George ,  Andreas Kadavanich ,  Daniel J. Devine ,  Stephen E. Savas ,  John Zajac ,  Hongching Shan

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67069 ,  H01J37/321 ,  H01J37/32431 ,  H01L21/02104 ,  H01L21/3065 ,  H01L21/6715 ,  H05H1/46

摘要： A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.

摘要翻译： 实施了更均匀的等离子体处理，以使用电感耦合等离子体源来处理处理对象，该等离子体源使用具有均匀间隔开的狭缝的开槽静电屏蔽件在处理表面处产生不对称等离子体密度图案。 槽式静电屏蔽以补偿不对称等离子体密度图案的方式进行修改，以在处理表面提供改良的等离子体密度图案。 描述了更均匀的径向等离子体处理，其中静电屏蔽装置被配置为以提供在整个处理表面上产生修改的径向变化特征的方式来替换给定的静电屏蔽。 电感耦合等离子体源限定对称轴，并且静电屏蔽装置被配置为包括相对于对称轴延伸穿过半径范围的形状。