Multi-workpiece processing chamber
    1.
    发明申请
    Multi-workpiece processing chamber 有权
    多工件处理室

    公开(公告)号:US20050247265A1

    公开(公告)日:2005-11-10

    申请号:US10828614

    申请日:2004-04-21

    IPC分类号: C23C16/00 H01L21/00

    CPC分类号: H01L21/6719

    摘要: A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations . An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

    摘要翻译: 多工件室包括至少两个处理站,用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分,这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造,其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置,用于建立过程相关产品的修改的交换特征。

    Method for forming stair-step structures
    2.
    发明授权
    Method for forming stair-step structures 有权
    形成阶梯结构的方法

    公开(公告)号:US08535549B2

    公开(公告)日:2013-09-17

    申请号:US13186255

    申请日:2011-07-19

    IPC分类号: B44C1/22 H01L21/302

    摘要: A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall layer is formed over the organic mask. The sidewall layer of the hard mask is removed while leaving the top layer of the hardmask. The organic mask is trimmed. The hardmask is removed. The substrate is etched. The forming the hardmask, removing the sidewall layer, trimming the organic mask, and etching the substrate are repeated a plurality of times.

    摘要翻译: 提供了一种在基板中形成台阶结构的方法。 在衬底上形成有机掩模。 在有机掩模上形成具有顶层和侧壁层的硬掩模。 去除硬掩模的侧壁层,同时留下硬掩模的顶层。 有机面罩被修剪。 硬掩模被删除。 衬底被蚀刻。 重复多次形成硬掩模,去除侧壁层,修整有机掩模和蚀刻基板。

    METHOD FOR FORMING STAIR-STEP STRUCTURES
    3.
    发明申请
    METHOD FOR FORMING STAIR-STEP STRUCTURES 有权
    形成平台结构的方法

    公开(公告)号:US20120149203A1

    公开(公告)日:2012-06-14

    申请号:US13186255

    申请日:2011-07-19

    IPC分类号: H01L21/311 H01L21/3065

    摘要: A method for forming a stair-step structure in a substrate is provided. An organic mask is formed over the substrate. A hardmask with a top layer and sidewall layer is formed over the organic mask. The sidewall layer of the hard mask is removed while leaving the top layer of the hardmask. The organic mask is trimmed. The hardmask is removed. The substrate is etched. The forming the hardmask, removing the sidewall layer, trimming the organic mask, and etching the substrate are repeated a plurality of times.

    摘要翻译: 提供了一种在基板中形成台阶结构的方法。 在衬底上形成有机掩模。 在有机掩模上形成具有顶层和侧壁层的硬掩模。 去除硬掩模的侧壁层,同时留下硬掩模的顶层。 有机面罩被修剪。 硬掩模被删除。 衬底被蚀刻。 重复多次形成硬掩模,去除侧壁层,修整有机掩模和蚀刻基板。

    Selective etching method and apparatus
    5.
    发明申请
    Selective etching method and apparatus 审中-公开
    选择性蚀刻方法和设备

    公开(公告)号:US20080124937A1

    公开(公告)日:2008-05-29

    申请号:US11506173

    申请日:2006-08-16

    申请人: Songlin Xu Ce Qin

    发明人: Songlin Xu Ce Qin

    IPC分类号: H01L21/3065

    CPC分类号: H01L21/31116

    摘要: A dry etching method and apparatus are described. A workpiece supports silicon nitride and silicon dioxide. The workpiece is exposed to a plasma containing at least one of sulfur hexafluoride and nitrogen trifluoride and ammonia to selectively remove the silicon nitride in relation to the silicon dioxide. In one feature, the plasma contains sulfur hexafluoride and ammonia. In another feature, the plasma contains nitrogen trifluoride and ammonia.

    摘要翻译: 描述了一种干蚀刻方法和装置。 工件支撑氮化硅和二氧化硅。 将工件暴露于含有六氟化硫和三氟化氮和氨中的至少一种的等离子体,以相对于二氧化硅选择性地除去氮化硅。 在一个特征中,等离子体含有六氟化硫和氨。 在另一特征中,等离子体含有三氟化氮和氨。

    Multi-workpiece processing chamber
    6.
    发明授权
    Multi-workpiece processing chamber 有权
    多工件处理室

    公开(公告)号:US08066815B2

    公开(公告)日:2011-11-29

    申请号:US11839527

    申请日:2007-08-15

    IPC分类号: C23C16/00 C23F1/00 H01L21/306

    CPC分类号: H01L21/6719

    摘要: A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

    摘要翻译: 多工件室包括至少两个处理站,用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分,这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造,其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置,用于建立过程相关产品的修改的交换特征。

    Multi-workpiece processing chamber
    7.
    发明授权
    Multi-workpiece processing chamber 有权
    多工件处理室

    公开(公告)号:US07276122B2

    公开(公告)日:2007-10-02

    申请号:US10828614

    申请日:2004-04-21

    IPC分类号: C23C16/00 C23F1/00 H01L21/306

    CPC分类号: H01L21/6719

    摘要: A multi-workpiece chamber includes at least two processing stations, for exposing workpieces to a treatment process. A partition cooperates with the chamber such that the partition is disengagably removable from the chamber and re-engagable with the chamber for selectively dividing the processing stations. The partition is configured to provide for non-line-of-sight travel of certain ones of the process related products between the processing stations. An exhaust arrangement divides exhaust flow into at least two approximately equal exhaust flow portions that leave the multi-workpiece chamber in a way which enhances uniformity of the treatment process for the stations. A partition configuration is described including a partition portion between the stations and a baffle portion extending into an exhaust arrangement. A modified partition arrangement is provided for use in establishing a modified exchange characteristic of the process related products.

    摘要翻译: 多工件室包括至少两个处理站,用于将工件暴露于处理过程。 分隔件与腔室配合使得分隔件可离开地从腔室移除并与腔室重新接合以选择性地分割处理站。 分区被配置为提供处理站之间的某些处理相关产品的非视距行进。 排气装置将废气流分成至少两个大致相等的排气流部分,这些排气流部分以提高站的处理过程的均匀性的方式离开多工件室。 描述了分隔构造,其包括站之间的分隔部分和延伸到排气装置中的挡板部分。 提供了一种改进的分区布置,用于建立过程相关产品的修改的交换特征。