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1.GRADED HIGH GERMANIUM COMPOUND FILMS FOR STRAINED SEMICONDUCTOR DEVICES 审中-公开
Title translation: 用于应变半导体器件的分级高锗化合物膜公开(公告)号:US20120032265A1
公开(公告)日:2012-02-09
申请号:US13020945
申请日:2011-02-04
Applicant: Danielle Simonelli , Anand Murthy
Inventor: Danielle Simonelli , Anand Murthy
IPC: H01L29/772
CPC classification number: H01L21/0245 , H01L21/02381 , H01L21/0251 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/517 , H01L29/66636 , H01L29/66795 , H01L29/7834 , H01L29/7848 , H01L29/785
Abstract: Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.
Abstract translation: 本文通常描述用于提供渐变的高锗化合物区域的装置和方法的实施例。 可以描述和要求保护其他实施例。
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2.Graded high germanium compound films for strained semiconductor devices 有权
Title translation: 用于应变半导体器件的分级高锗化合物膜公开(公告)号:US20100148217A1
公开(公告)日:2010-06-17
申请号:US12316510
申请日:2008-12-11
Applicant: Danielle Simonelli , Anand Murthy
Inventor: Danielle Simonelli , Anand Murthy
IPC: H01L29/78 , H01L21/20 , H01L21/336
CPC classification number: H01L21/0245 , H01L21/02381 , H01L21/0251 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/517 , H01L29/66636 , H01L29/66795 , H01L29/7834 , H01L29/7848 , H01L29/785
Abstract: Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.
Abstract translation: 本文通常描述用于提供渐变的高锗化合物区域的装置和方法的实施例。 可以描述和要求保护其他实施例。
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3.Graded high germanium compound films for strained semiconductor devices 有权
Title translation: 用于应变半导体器件的分级高锗化合物膜公开(公告)号:US07902009B2
公开(公告)日:2011-03-08
申请号:US12316510
申请日:2008-12-11
Applicant: Danielle Simonelli , Anand Murthy
Inventor: Danielle Simonelli , Anand Murthy
IPC: H01L21/00
CPC classification number: H01L21/0245 , H01L21/02381 , H01L21/0251 , H01L21/02532 , H01L21/02579 , H01L21/0262 , H01L21/02636 , H01L29/517 , H01L29/66636 , H01L29/66795 , H01L29/7834 , H01L29/7848 , H01L29/785
Abstract: Embodiments of an apparatus and methods for providing a graded high germanium compound region are generally described herein. Other embodiments may be described and claimed.
Abstract translation: 本文通常描述用于提供渐变的高锗化合物区域的装置和方法的实施例。 可以描述和要求保护其他实施例。
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