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    MICROFLUIDIC FILTRATION UNIT, DEVICE AND METHODS THEREOF
    2.
    发明申请
    MICROFLUIDIC FILTRATION UNIT, DEVICE AND METHODS THEREOF 审中-公开
    微流体过滤装置，装置及其方法

    公开(公告)号：US20100288689A1

    公开(公告)日：2010-11-18

    申请号：US12438505

    申请日：2006-08-22

    申请人： Liang Zhu ,  Wen-Tso Liu ,  Hanhua Feng ,  Hong Miao Ji ,  William Cheng Yong Teo ,  Ramana Murthy Badam

    发明人： Liang Zhu ,  Wen-Tso Liu ,  Hanhua Feng ,  Hong Miao Ji ,  William Cheng Yong Teo ,  Ramana Murthy Badam

    IPC分类号： B81B1/00 ,  B01D29/03 ,  B01D29/50

    CPC分类号： B01D61/147 ,  B01L3/5027 ,  G01N1/4077

    摘要： A microfluidic filtration unit for trapping particles of a predetermined nominal size present in a fluid is provided. The unit comprises a fluid chamber connected to an inlet for introducing the fluid to be filtered and an outlet for discharging filtered fluid, a filtration barrier arranged within the fluid chamber, said filtration barrier comprising a plurality of pillars arranged substantially perpendicular to the path of fluid flow when fluid is introduced into the fluid chamber, said pillars being aligned to form at least one row extending across said path of fluid flow, wherein each of said at least one row of pillars in the filtration barrier comprises at least one fine filtration section comprising a group of pillars that are spaced apart to prevent particles to be filtered from the fluid from moving between adjacent pillars, and at least one coarse filtration section comprising a group of pillars that are spaced apart to permit the movement of particles between adjacent pillars.

    摘要翻译： 提供了用于捕获存在于流体中的预定公称尺寸的微粒的微流体过滤单元。 该单元包括连接到入口的流体室，用于引入要过滤的流体和用于排出过滤流体的出口，布置在流体室内的过滤阻挡层，所述过滤屏障包括基本上垂直于流体路径布置的多个柱 当流体被引入到流体室中时，所述柱被对准以形成跨越所述流体流动路径延伸的至少一排，其中所述过滤阻挡层中的所述至少一排柱中的每一个包括至少一个精细过滤部分，其包括 间隔开的一组支柱，以防止颗粒从流体中过滤，以在相邻的柱之间移动;以及至少一个粗过滤部分，其包括间隔开的一组支柱，以允许颗粒在相邻支柱之间移动。

    Distributed joint admission control and dynamic resource allocation in stream processing networks
    3.
    发明授权
    Distributed joint admission control and dynamic resource allocation in stream processing networks 失效

    公开(公告)号：US07889651B2

    公开(公告)日：2011-02-15

    申请号：US11758706

    申请日：2007-06-06

    申请人： Hanhua Feng ,  Zhen Liu ,  Honghui Xia ,  Li Zhang

    发明人： Hanhua Feng ,  Zhen Liu ,  Honghui Xia ,  Li Zhang

    IPC分类号： G01R31/08

    CPC分类号： G06F9/5066 ,  G06F9/5038

    摘要： Methods and apparatus operating in a stream processing network perform load shedding and dynamic resource allocation so as to meet a pre-determined utility criterion. Load shedding is envisioned as an admission control problem encompassing source nodes admitting workflows into the stream processing network. A primal-dual approach is used to decompose the admission control and resource allocation problems. The admission control operates as a push-and-pull process with sources pushing workflows into the stream processing network and sinks pulling processed workflows from the network. A virtual queue is maintained at each node to account for both queue backlogs and credits from sinks. Nodes of the stream processing network maintain shadow prices for each of the workflows and share congestion information with neighbor nodes. At each node, resources are devoted to the workflow with the maximum product of downstream pressure and processing rate, where the downstream pressure is defined as the backlog difference between neighbor nodes. The primal-dual controller iteratively adjusts the admission rates and resource allocation using local congestion feedback. The iterative controlling procedure further uses an interior-point method to improve the speed of convergence towards optimal admission and allocation decisions.

    High performance silicon condenser microphone with perforated single crystal silicon backplate
    4.
    发明授权
    High performance silicon condenser microphone with perforated single crystal silicon backplate 失效
    高性能硅电容式麦克风，带有单孔硅衬底

    公开(公告)号：US06667189B1

    公开(公告)日：2003-12-23

    申请号：US10243906

    申请日：2002-09-13

    申请人： Zhe Wang ,  Qingxin Zhang ,  Hanhua Feng

    发明人： Zhe Wang ,  Qingxin Zhang ,  Hanhua Feng

    IPC分类号： H01L2100

    CPC分类号： H04R19/005 ,  Y10T29/49005

    摘要： A silicon condenser microphone is described. The silicon condenser microphone of the present invention comprises a perforated backplate comprising a portion of a single crystal silicon substrate, a support structure formed on the single crystal silicon substrate, and a floating silicon diaphragm supported at its edge by the support structure and lying parallel to the perforated backplate and separated from the perforated backplate by an air gap.

    摘要翻译： 描述了硅电容麦克风。 本发明的硅电容麦克风包括一个多孔背板，它包括单晶硅衬底的一部分，形成在单晶硅衬底上的一个支撑结构，以及一个浮动硅隔膜，其支撑结构在其边缘平行于 穿孔背板并通过气隙与多孔背板隔开。

    PULL DATA TRANSFER METHOD IN REQUEST-RESPONSE MODELS
    5.
    发明申请
    PULL DATA TRANSFER METHOD IN REQUEST-RESPONSE MODELS 有权
    请求响应模型中的数据传输方法

    公开(公告)号：US20140067908A1

    公开(公告)日：2014-03-06

    申请号：US13469423

    申请日：2012-05-11

    申请人： Hanhua Feng ,  Anton Viktorovich Riabov

    发明人： Hanhua Feng ,  Anton Viktorovich Riabov

    IPC分类号： H04L29/08

    CPC分类号： H04L67/26 ,  H04L45/20 ,  H04L45/28 ,  H04L67/325

    摘要： Systems, methods, and products for pull data transfer in a request-response model are provided herein. One aspect provides for generating output data utilizing at least one data generation station; and communicating via the at least one data generation station output data related to at least one data request received from at least one data requesting station responsive to at least one criterion, the at least one criterion comprising one of expiration of a time period or generation of a threshold amount of output data. Other embodiments and aspects are also described herein.

    摘要翻译： 本文提供了在请求 - 响应模型中拉数据传输的系统，方法和产品。 一方面提供了利用至少一个数据生成站产生输出数据的方法; 以及响应于至少一个标准，经由所述至少一个数据生成站输出与从至少一个数据请求站接收的至少一个数据请求相关的数据，所述至少一个标准包括一个时间段的到期或生成 输出数据的阈值量。 本文还描述了其它实施例和方面。

    Visualizing query results in stream processing systems
    6.
    发明授权
    Visualizing query results in stream processing systems 失效
    在流处理系统中可视化查询结果

    公开(公告)号：US08290939B2

    公开(公告)日：2012-10-16

    申请号：US12827419

    申请日：2010-06-30

    申请人： Eric Bouillet ,  Hanhua Feng ,  Anton V Riabov

    发明人： Eric Bouillet ,  Hanhua Feng ,  Anton V Riabov

    IPC分类号： G06F7/00

    CPC分类号： G06F17/30516

    摘要： In a method for visualizing query results in stream processing systems, a visualization service receives a query from a client to visualize data in a stream processing application. The query is sent from the visualization service to a query-able operator of the stream processing application. At the query-able operator, an operation is performed using history data in the query-able operator to produce a first result that satisfies the query and the first result is sent to the visualization service. At the query-able operator, another operation is performed using new data received by the query-able operator to produce a second result that satisfies the query and the second result is sent to the visualization service. The first and second results are output from the visualization service to the client.

    摘要翻译： 在用于在流处理系统中可视化查询结果的方法中，可视化服务从客户端接收查询以在流处理应用中可视化数据。 查询从可视化服务发送到流处理应用程序的可查询操作员。 在可查询操作员处，使用可查询操作符中的历史数据执行操作，以产生满足查询的第一个结果，并将第一个结果发送给可视化服务。 在可查询操作员处，使用由可查询操作者接收的新数据执行另一操作，以产生满足查询的第二结果，并将第二结果发送给可视化服务。 第一和第二个结果从可视化服务输出到客户端。

    Method of making an integrated circuit inductor wherein a plurality of apertures are formed beneath an inductive loop
    7.
    发明授权
    Method of making an integrated circuit inductor wherein a plurality of apertures are formed beneath an inductive loop 失效
    制造集成电路电感器的方法，其中在感应环下形成多个孔

    公开(公告)号：US06908825B2

    公开(公告)日：2005-06-21

    申请号：US10298418

    申请日：2002-11-14

    申请人： Shuming Xu ,  Hanhua Feng ,  Pang Dow Foo ,  Bai Xu ,  Uppili Sridhar

    发明人： Shuming Xu ,  Hanhua Feng ,  Pang Dow Foo ,  Bai Xu ,  Uppili Sridhar

    IPC分类号： H01F17/00 ,  H01L21/02 ,  H01L27/08 ,  H01L21/764

    CPC分类号： H01L28/10 ,  H01F17/0006 ,  H01L27/08

    摘要： The invention relates to a method of making an integrated circuit inductor that comprises a silicon substrate and an oxide layer on the silicon substrate. In one aspect, the method comprises depositing an inductive loop on the oxide layer, and making a plurality of apertures in the oxide layer beneath the inductive loop. The method also comprises providing a plurality of bridges adjacent the apertures and provided by portions of the oxide layer between an inner region within the inductive loop and an outer region of the oxide layer without the inductive loop, the inductive loop being supported on the bridges. The method comprises forming a trench in the silicon substrate beneath the bridges, to provide an air gap between the inductive loop and the silicon substrate.

    摘要翻译： 本发明涉及一种制造集成电路电感器的方法，该集成电路电感器包括硅衬底和硅衬底上的氧化物层。 在一个方面，该方法包括在氧化物层上沉积感应回路，以及在感应回路下面的氧化物层中形成多个孔。 该方法还包括提供邻近孔的多个桥，并且由感应环内的内部区域和氧化物层的外部区域之间的氧化物层的部分提供，而没有感应环路，感应环路被支撑在桥上。 该方法包括在桥下方的硅衬底中形成沟槽，以在感应环路和硅衬底之间提供气隙。

    RF LDMOS on partial SOI substrate
    8.
    发明授权
    RF LDMOS on partial SOI substrate 失效

    公开(公告)号：US06667516B2

    公开(公告)日：2003-12-23

    申请号：US10186528

    申请日：2002-07-01

    申请人： Shuming Xu ,  Hanhua Feng ,  Pang-Dow Foo

    发明人： Shuming Xu ,  Hanhua Feng ,  Pang-Dow Foo

    IPC分类号： H01L2994

    CPC分类号： H01L29/66659 ,  H01L29/0653 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/66636 ,  H01L29/7835 ,  Y10S438/923

    摘要： In the prior art LDMOSFET devices capable of handling high power have been made by locating the source contact on the bottom surface of the device, allowing for good heat sinking, with connection to the source region being made through a sinker. However, this structure has poor high frequency characteristics. Also in the prior art, good high frequency performance has been achieved by introducing a dielectric layer immediately below the source/drain regions (SOI) but this structure has poor power handling capabilities. The present invention achieves both good high frequency behavior as well as good power capability in the same device. Instead of inserting a dielectric layer over the entire cross-section of the device, the dielectric layer is limited to being below the heavily doped section of the drain with a small amount of overlap into the lightly doped section. The structure is described in detail together with a process for manufacturing it.

    Integrated circuit inductor
    9.
    发明授权
    Integrated circuit inductor 失效
    集成电路电感

    公开(公告)号：US06495903B2

    公开(公告)日：2002-12-17

    申请号：US09737439

    申请日：2000-12-13

    申请人： Shuming Xu ,  Hanhua Feng ,  Pang Dow Foo ,  Bai Xu ,  Uppili Sridhar

    发明人： Shuming Xu ,  Hanhua Feng ,  Pang Dow Foo ,  Bai Xu ,  Uppili Sridhar

    IPC分类号： H01L2900

    CPC分类号： H01L28/10 ,  H01F17/0006 ,  H01L27/08

    摘要： An inductor has a spiral aluminum track deposited on an oxide layer over a silicon substrate. The substrate is etched away to form a trench, which extends around beneath the track and provides an air gap having a low dielectric constant. The oxide layer has an inner region within the track, an outer region outside the track and a bridging region extending between the other regions. The bridging region is comprised of intact bridges and gaps therebetween, which are open to the trench and through which an etchant has access to the silicon substrate to form the trench by etching.

    摘要翻译： 电感器具有沉积在硅衬底上的氧化物层上的螺旋状铝轨道。 将衬底蚀刻掉以形成沟槽，该沟槽在轨道下方延伸并提供具有低介电常数的气隙。 氧化物层具有轨道内的内部区域，轨道外部的外部区域和在其它区域之间延伸的桥接区域。 桥接区域由完整的桥和它们之间的间隙组成，它们对沟槽开放，蚀刻剂可以通过该沟槽进入硅衬底以通过蚀刻形成沟槽。

    RF LDMOS on partial SOI substrate
    10.
    发明授权
    RF LDMOS on partial SOI substrate 失效
    RF LDMOS在部分SOI衬底上

    公开(公告)号：US06461902B1

    公开(公告)日：2002-10-08

    申请号：US09618263

    申请日：2000-07-18

    申请人： Shuming Xu ,  Hanhua Feng ,  Pang-Dow Foo

    发明人： Shuming Xu ,  Hanhua Feng ,  Pang-Dow Foo

    IPC分类号： H01L2100

    CPC分类号： H01L29/66659 ,  H01L29/0653 ,  H01L29/4175 ,  H01L29/41766 ,  H01L29/66636 ,  H01L29/7835 ,  Y10S438/923

    摘要： In the prior art LDMOSFET devices capable of handling high power have been made by locating the source contact on the bottom surface of the device, allowing for good heat sinking, with connection to the source region being made through a sinker. However, this structure has poor high frequency characteristics. Also in the prior art, good high frequency performance has been achieved by introducing a dielectric layer immediately below the source/drain regions (SOI) but this structure has poor handling capabilities. The present invention achieves both good high frequency behavior as well as good power capability in the same device. Instead of inserting a dielectric layer over the entire cross-section of the device, the dielectric layer is limited to being below the heavily doped section of the drain with a small amount of overlap into the lightly doped section. The structure is described in detail together with a process for manufacturing it.

    摘要翻译： 在现有技术中，能够处理高功率的LDMOSFET器件已经通过将源极接触定位在器件的底表面上，通过连接到源极区域通过沉降片而实现良好的散热。 然而，该结构具有差的高频特性。 同样在现有技术中，通过在源极/漏极区域（SOI）之下引入介电层已经实现了良好的高频性能，但是该结构具有差的处理能力。 本发明在同一设备中实现了良好的高频行为以及良好的功率能力。 代替在器件的整个横截面上插入电介质层，电介质层被限制在漏极的重掺杂部分之下，在轻掺杂部分中具有少量的重叠。 详细描述该结构及其制造方法。