Method of forming an ink supply channel
    3.
    发明授权
    Method of forming an ink supply channel 有权
    形成供墨通道的方法

    公开(公告)号:US07837887B2

    公开(公告)日:2010-11-23

    申请号:US12542659

    申请日:2009-08-17

    IPC分类号: G11B5/127

    摘要: A method of forming an ink supply channel for an inkjet printhead comprises the steps of: (i) providing a wafer having a frontside and a backside; (ii) etching a plurality of frontside trenches into the frontside; (iii) filling each of the trenches with a photoresist plug; (iv) forming nozzle structures on the frontside using MEMS fabrication processes; (v) etching a backside trench from the backside, the backside trench meeting with one or more of the plugs; (vi) removing a portion of each photoresist plug via the backside trench by subjecting the backside to a biased oxygen plasma etch, thereby exposing sidewall features in the backside trench; (vii) modifying the exposed sidewall features; and (viii) removing the photoresist plugs to form the ink supply channel. The ink supply channel connects the backside to the frontside.

    摘要翻译: 一种形成用于喷墨打印头的供墨通道的方法包括以下步骤:(i)提供具有前侧和后侧的晶片; (ii)将多个前侧沟槽蚀刻到前侧; (iii)用光致抗蚀剂插塞填充每个沟槽; (iv)使用MEMS制造工艺在前侧形成喷嘴结构; (v)从背面蚀刻背面沟槽,所述背面沟槽与一个或多个所述插头相会合; (vi)通过使背面经受偏压的氧等离子体蚀刻,从而暴露背面沟槽中的侧壁特征,通过背侧沟槽去除每个光致抗蚀剂插塞的一部分; (vii)修改暴露的侧壁特征; 和(viii)去除光致抗蚀剂插头以形成供墨通道。 供墨通道将背面连接到前侧。

    METHOD OF ETCHING BACKSIDE INK SUPPLY CHANNELS FOR AN INKJET PRINTHEAD
    4.
    发明申请
    METHOD OF ETCHING BACKSIDE INK SUPPLY CHANNELS FOR AN INKJET PRINTHEAD 审中-公开
    用于喷墨打印机的背面墨水通道的方法

    公开(公告)号:US20110024389A1

    公开(公告)日:2011-02-03

    申请号:US12905078

    申请日:2010-10-15

    IPC分类号: C23F1/00

    摘要: A method of etching backside ink supply channels for an inkjet printhead. The method includes the steps of: (a) attaching a frontside of the printhead to a handle wafer; (b) etching the backside of the printhead using an anisotropic DRIE process to form a plurality of ink supply channels, the DRIE process including alternating etching and passivation steps, the passivation steps depositing a polymeric coating on sidewalls of the ink supply channels; and (c) removing the polymeric coating by etching the backside of the printhead in a biased plasma etching chamber using an O2 plasma. The chamber temperature is in the range of 90 to 180° C.

    摘要翻译: 一种蚀刻用于喷墨打印头的背面供墨通道的方法。 该方法包括以下步骤:(a)将打印头的前侧连接到手柄晶片; (b)使用各向异性DRIE工艺蚀刻打印头的背面以形成多个供墨通道,所述DRIE工艺包括交替的蚀刻和钝化步骤,所述钝化步骤在所述供墨通道的侧壁上沉积聚合物涂层; 和(c)通过使用O 2等离子体在偏压等离子体蚀刻室中蚀刻打印头的背面去除聚合物涂层。 室温度在90至180℃的范围内

    Method Of Forming An Ink Supply Channel
    7.
    发明申请
    Method Of Forming An Ink Supply Channel 有权
    形成供墨通道的方法

    公开(公告)号:US20090301999A1

    公开(公告)日:2009-12-10

    申请号:US12542659

    申请日:2009-08-17

    IPC分类号: G11B5/127

    摘要: A method of forming an ink supply channel for an inkjet printhead comprises the steps of: (i) providing a wafer having a frontside and a backside; (ii) etching a plurality of frontside trenches into the frontside; (iii) filling each of the trenches with a photoresist plug; (iv) forming nozzle structures on the frontside using MEMS fabrication processes; (v) etching a backside trench from the backside, the backside trench meeting with one or more of the plugs; (vi) removing a portion of each photoresist plug via the backside trench by subjecting the backside to a biased oxygen plasma etch, thereby exposing sidewall features in the backside trench; (vii) modifying the exposed sidewall features; and (viii) removing the photoresist plugs to form the ink supply channel. The ink supply channel connects the backside to the frontside.

    摘要翻译: 一种形成用于喷墨打印头的供墨通道的方法包括以下步骤:(i)提供具有前侧和后侧的晶片; (ii)将多个前侧沟槽蚀刻到前侧; (iii)用光致抗蚀剂插塞填充每个沟槽; (iv)使用MEMS制造工艺在前侧形成喷嘴结构; (v)从背面蚀刻背面沟槽,所述背面沟槽与一个或多个所述插头相会合; (vi)通过使背面经受偏压的氧等离子体蚀刻,从而暴露背面沟槽中的侧壁特征,通过背侧沟槽去除每个光致抗蚀剂插塞的一部分; (vii)修改暴露的侧壁特征; 和(viii)去除光致抗蚀剂插头以形成供墨通道。 供墨通道将背面连接到前侧。

    Method of modifying an etched trench
    8.
    发明授权
    Method of modifying an etched trench 有权
    修改蚀刻沟槽的方法

    公开(公告)号:US07588693B2

    公开(公告)日:2009-09-15

    申请号:US11242916

    申请日:2005-10-05

    IPC分类号: C23F1/00 G01D15/00

    摘要: A process for facilitating modification of an etched trench is provided. The process comprises: (a) providing a wafer comprising an etched trench, the trench having a photoresist plug at its base; and (b) removing a portion of the photoresist by subjecting the wafer to a biased oxygen plasma etch. The process is particularly suitable for preparing a trench for subsequent argon ion milling. Printhead integrated circuits fabricated by a process according to the invention have improved ink channel surface profiles and/or surface properties.

    摘要翻译: 提供了一种便于修改蚀刻沟槽的工艺。 该方法包括:(a)提供包括蚀刻沟槽的晶片,所述沟槽在其底部具有光致抗蚀剂插塞; 和(b)通过对晶片进行偏压氧等离子体蚀刻来去除一部分光致抗蚀剂。 该方法特别适用于制备后续氩离子研磨的沟槽。 通过根据本发明的方法制造的印刷头集成电路具有改进的油墨通道表面轮廓和/或表面性质。