公开(公告)号：US5049978A

公开(公告)日：1991-09-17

申请号：US579652

申请日：1990-09-10

申请人： David A. Bates ,  Ronald B. Browne ,  David P. Smith

发明人： David A. Bates ,  Ronald B. Browne ,  David P. Smith

IPC分类号： H01L23/10 ,  H01L23/14 ,  H01L23/498 ,  H01L23/538 ,  H01L23/58 ,  H01L25/16

CPC分类号： H01L23/49872 ,  H01L23/10 ,  H01L23/147 ,  H01L23/5384 ,  H01L23/585 ,  H01L23/66 ,  H01L24/24 ,  H01L24/82 ,  H01L25/16 ,  H01L2223/6683 ,  H01L2224/24225 ,  H01L2224/24227 ,  H01L2224/32225 ,  H01L2224/73267 ,  H01L2224/82039 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/1423 ,  H01L2924/15153 ,  H01L2924/15165 ,  H01L2924/16152 ,  H01L2924/3011

摘要： A conductively enclosed hybrid integrated circuit assembly for use with microwave and millimeter wave signals is disclosed. The enclosure utilizes a silicon substrate into which recesses are formed by conventional silicon etching processes to support individual MMIC chips with their surfaces flush with the unetched substrate surfaces. The assembly is covered with a thin solid dielectric layer, perforated over points of connection and followed by a metallization to provide point-to-point connections. The arrangement provides one or more levels of patterned metallizations with additional levels being provided either by additional dielectric layers or by forming the silicon substrate from three or more laminar elements and providing a patterned metallization on the surface of an intermediate element. Efficiency in signal grounding and in rf transmission line paths is assured by surface metallizations and the provision of low impedance paths through the substrate. Fully hermetic seals are provided using conventional silicon processing. Input/Output connections may be either electrical or optical.

摘要翻译： 公开了一种与微波和毫米波信号一起使用的导电封闭式混合集成电路组件。 外壳利用硅衬底，通过常规硅蚀刻工艺形成凹槽，以支撑各个MMIC芯片，其表面与未蚀刻的衬底表面齐平。 组件被薄的固体介电层覆盖，穿过连接点，随后进行金属化以提供点对点连接。 该布置提供一个或多个图案化金属化层，其中附加层可以由附加的介电层提供，或通过从三个或更多个层状元件形成硅衬底，并在中间元件的表面上提供图案化的金属化。 通过表面金属化和通过衬底的低阻抗路径提供信号接地和射频传输线路径的效率。 使用常规的硅加工提供完全密封的密封。 输入/输出连接可以是电的或光学的。