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1.发明申请SINGLE-ELECTRON DETECTION METHOD AND APPARATUS FOR SOLID-STATE INTENSITY IMAGE SENSORS 有权用于固态强度图像传感器的单电子检测方法和装置公开(公告)号：US20110233386A1
公开(公告)日：2011-09-29
申请号：US12730037
申请日：2010-03-23
申请人： David C. Shaver , Bernard B. Kosicki , Robert K. Reich , Dennis D. Rathman , Daniel R. Schuette , Brian F. Aull
发明人： David C. Shaver , Bernard B. Kosicki , Robert K. Reich , Dennis D. Rathman , Daniel R. Schuette , Brian F. Aull
IPC分类号： H01L27/148 , H01L31/18 , H01L31/107
CPC分类号： H04N5/378 , H01L31/107 , H01L31/18 , H04N5/355 , H04N5/357 , H04N5/37213
摘要： Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.
摘要翻译： 本发明的实施例包括具有电荷耦合器件（CCD）寄存器的电子计数器，其被配置为将电子转移到可操作地耦合到CCD寄存器的输出的盖革模式雪崩二极管（GM-AD）阵列。 在高电荷电平下，非破坏性放大器检测CCD寄存器输出端的电荷，以提供电荷的模拟指示。 在低电荷水平下，无噪声的电荷分离器或仪表将电荷分成单电子分组，每个分组由GM-AD检测，提供数字输出，指示电子是否存在。 示例电子计数器特别适用于计数由大格式高速成像阵列产生的光电子，因为它们以高动态范围和高灵敏度运行。 因此，它们可以用于在各种各样的光照范围内拍摄场景。
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2.发明授权Single-electron detection method and apparatus for solid-state intensity image sensors with a charge-metering device 有权具有电荷计量装置的固态强度图像传感器的单电子检测方法和装置公开(公告)号：US08324554B2
公开(公告)日：2012-12-04
申请号：US12730037
申请日：2010-03-23
申请人： David C. Shaver , Bernard B. Kosicki , Robert K. Reich , Dennis D Rathman , Daniel R. Schuette , Brian F. Aull
发明人： David C. Shaver , Bernard B. Kosicki , Robert K. Reich , Dennis D Rathman , Daniel R. Schuette , Brian F. Aull
IPC分类号： H01L31/00
CPC分类号： H04N5/378 , H01L31/107 , H01L31/18 , H04N5/355 , H04N5/357 , H04N5/37213
摘要： Embodiments of the present invention include an electron counter with a charge-coupled device (CCD) register configured to transfer electrons to a Geiger-mode avalanche diode (GM-AD) array operably coupled to the output of the CCD register. At high charge levels, a nondestructive amplifier senses the charge at the CCD register output to provide an analog indication of the charge. At low charge levels, noiseless charge splitters or meters divide the charge into single-electron packets, each of which is detected by a GM-AD that provides a digital output indicating whether an electron is present. Example electron counters are particularly well suited for counting photoelectrons generated by large-format, high-speed imaging arrays because they operate with high dynamic range and high sensitivity. As a result, they can be used to image scenes over a wide range of light levels.
摘要翻译： 本发明的实施例包括具有电荷耦合器件（CCD）寄存器的电子计数器，其被配置为将电子转移到可操作地耦合到CCD寄存器的输出的盖革模式雪崩二极管（GM-AD）阵列。 在高电荷电平下，非破坏性放大器检测CCD寄存器输出端的电荷，以提供电荷的模拟指示。 在低电荷水平下，无噪声的电荷分离器或仪表将电荷分成单电子分组，每个分组由GM-AD检测，提供数字输出，指示电子是否存在。 示例电子计数器特别适用于计数由大格式高速成像阵列产生的光电子，因为它们具有高动态范围和高灵敏度。 因此，它们可以用于在各种各样的光照范围内拍摄场景。
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公开(公告)号：US20110235771A1
公开(公告)日：2011-09-29
申请号：US12730048
申请日：2010-03-23
CPC分类号： H04N5/37455 , H04N5/355
摘要： Embodiments of the present invention include complementary metal-oxide-semiconductor (CMOS) readout architectures for photon-counting arrays with a photon-counting detector, a digital counter, and an overflow bit in each of the sensing elements in the array. Typically, the photon-counting detector is a Geiger-mode avalanche photodiode (APD) that emits brief pulses every time it detects a photon. The pulse increments the digital counters, which, in turn, sets the overflow bit once it reaches a given count. A rolling readout system operably coupled to each sensing element polls the overflow bit, and, if the overflow bit is high, initiates a data transfer from the overflow bit to a frame store. Compared to other photo-counting imagers, photon-counting imagers with counters and overflow bits operate with decreased transfer bandwidth, high dynamic range, and fine spatial resolution.
摘要翻译： 本发明的实施例包括用于具有光子计数检测器的光子计数阵列的互补金属氧化物半导体（CMOS）读出结构，阵列中每个感测元件中的数字计数器和溢出位。 通常，光子计数检测器是Geiger模式雪崩光电二极管（APD），每次检测到光子时都会发出短脉冲。 脉冲递增数字计数器，一旦它达到给定的计数，这又会设置溢出位。 可操作地耦合到每个感测元件的滚动读出系统轮询溢出位，并且如果溢出位为高，则启动从溢出位到帧存储的数据传送。 与其他光计数成像仪相比，具有计数器和溢出位的光子计数成像器可以减少传输带宽，高动态范围和精细的空间分辨率。
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公开(公告)号：US08426797B2
公开(公告)日：2013-04-23
申请号：US12730048
申请日：2010-03-23
IPC分类号： H03K21/40
CPC分类号： H04N5/37455 , H04N5/355
摘要： Embodiments of the present invention include complementary metal-oxide-semiconductor (CMOS) readout architectures for photon-counting arrays with a photon-counting detector, a digital counter, and an overflow bit in each of the sensing elements in the array. Typically, the photon-counting detector is a Geiger-mode avalanche photodiode (APD) that emits brief pulses every time it detects a photon. The pulse increments the digital counters, which, in turn, sets the overflow bit once it reaches a given count. A rolling readout system operably coupled to each sensing element polls the overflow bit, and, if the overflow bit is high, initiates a data transfer from the overflow bit to a frame store. Compared to other photo-counting imagers, photon-counting imagers with counters and overflow bits operate with decreased transfer bandwidth, high dynamic range, and fine spatial resolution.
摘要翻译： 本发明的实施例包括用于具有光子计数检测器的光子计数阵列的互补金属氧化物半导体（CMOS）读出结构，阵列中每个感测元件中的数字计数器和溢出位。 通常，光子计数检测器是Geiger模式雪崩光电二极管（APD），每次检测到光子时都会发出短脉冲。 脉冲递增数字计数器，一旦它达到给定的计数，这又会设置溢出位。 可操作地耦合到每个感测元件的滚动读出系统轮询溢出位，并且如果溢出位为高，则启动从溢出位到帧存储的数据传送。 与其他光计数成像仪相比，具有计数器和溢出位的光子计数成像器可以减少传输带宽，高动态范围和精细的空间分辨率。
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