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1.发明授权Formation of self-assembled monolayers of redox SAMs on silicon for molecular memory applications 失效在硅上形成用于分子记忆应用的氧化还原SAM的自组装单层公开(公告)号：US07348206B2
公开(公告)日：2008-03-25
申请号：US10040059
申请日：2001-10-26
申请人： David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey , Rajeeve Balkrishna Dabke , Zhiming Liu
发明人： David F. Bocian , Werner G. Kuhr , Jonathan S. Lindsey , Rajeeve Balkrishna Dabke , Zhiming Liu
IPC分类号： H01L51/40
CPC分类号： G11C13/0019 , B05D1/185 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/025 , H01L51/0075 , H01L51/0077 , H01L51/0595
摘要： This invention provides a new method of forming a self-assembling monolayer (SAM) of alcohol-terminated or thiol-terminated organic molecules (e.g. ferrocenes, porphyrins, etc.) on a silicon or other group IV element surface. The assembly is based on the formation of an E-O— or an E-S— bond where E is the group IV element (e.g. Si, Ge, etc.). The procedure has been successfully used on both P- and n-type group IV element surfaces. The assemblies are stable under ambient conditions and can be exposed to repeated electrochemical cycling.
摘要翻译： 本发明提供了一种在硅或其它IV族元素表面上形成醇封端或硫醇封端的有机分子（例如二茂铁，卟啉等）的自组装单层（SAM）的新方法。 该组合基于形成E-O-或E-S-键，其中E是IV族元素（例如Si，Ge等）。 该程序已经成功地用于P型和N型IV族元件表面。 组件在环境条件下是稳定的并且可以暴露于重复的电化学循环。
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公开(公告)号：US08231941B2
公开(公告)日：2012-07-31
申请号：US12265990
申请日：2008-11-06
CPC分类号： H01L51/0089 , B82Y10/00 , H01L51/0003 , H01L51/0595
摘要： This invention provides novel methods for the formation of redox-active polymers attached to surfaces. In certain embodiments, the methods involve providing redox-active molecules bearing at least a first reactive site or group and a second reactive site or group; and contacting the surface with the redox-active molecules where the contacting is under conditions that result in attachment of said redox-active molecules to said surface via the first reactive site or group and attachment of redox-active molecules via the second reactive site or group, to the redox-active molecules attached to the surface thereby forming a polymer attached to said surface where the polymers comprise at least two of said redox-active molecules.
摘要翻译： 本发明提供了形成附着于表面的氧化还原活性聚合物的新方法。 在某些实施方案中，所述方法包括提供至少具有第一反应位点或基团和第二反应位点或基团的氧化还原活性分子; 以及使所述表面与所述氧化还原活性分子接触，其中所述接触在导致所述氧化还原活性分子经由所述第一反应位点或基团连接到所述表面的条件下，并且经由所述第二反应性位点或基团连接氧化还原活性分子 附着于表面的氧化还原活性分子，从而形成连接到所述表面的聚合物，其中聚合物包含至少两种所述氧化还原活性分子。
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公开(公告)号：US20090121210A1
公开(公告)日：2009-05-14
申请号：US12050364
申请日：2008-03-18
CPC分类号： G11C13/0019 , B05D1/185 , B82Y10/00 , B82Y30/00 , B82Y40/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/025 , H01L51/0075 , H01L51/0077 , H01L51/0595
摘要： This invention provides a new method of forming a self-assembling monolayer (SAM) of alcohol-terminated or thiol-terminated organic molecules (e.g. ferrocenes, porphyrins, etc.) on a silicon or other group IV element surface. The assembly is based on the formation of an E-O— or an E-S— bond where E is the group IV element (e.g. Si, Ge, etc.). The procedure has been successfully used on both P- and n-type group IV element surfaces. The assemblies are stable under ambient conditions and can be exposed to repeated electrochemical cycling.
摘要翻译： 本发明提供了一种在硅或其它IV族元素表面上形成醇封端或硫醇封端的有机分子（例如二茂铁，卟啉等）的自组装单层（SAM）的新方法。 该组合基于形成E-O-或E-S-键，其中E是IV族元素（例如Si，Ge等）。 该程序已经成功地用于P型和N型IV族元件表面。 组件在环境条件下是稳定的并且可以暴露于重复的电化学循环。
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公开(公告)号：US08529996B2
公开(公告)日：2013-09-10
申请号：US11688194
申请日：2007-03-19
申请人： David F. Bocian , Jonathan S. Lindsey , Zhiming Liu , Amir A. Yasseri , Veena Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert S. Loewe
发明人： David F. Bocian , Jonathan S. Lindsey , Zhiming Liu , Amir A. Yasseri , Veena Misra , Qian Zhao , Qiliang Li , Shyam Surthi , Robert S. Loewe
IPC分类号： C23C16/00
CPC分类号： H01L51/0002 , B82Y10/00 , G11B9/14 , G11B9/149 , G11C13/0014 , G11C13/0016 , H01L51/0008 , H01L51/001 , H01L51/0026 , H01L51/0075 , H01L51/0077 , H01L51/0595 , H01L51/4213 , H01M4/60 , H01M14/005 , Y02E10/549
摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.
摘要翻译： 本发明提供了一种将分子连接到半导体表面，特别是硅的新方法。 以前已经显示出包括但不限于卟啉和二茂铁的分子是用于基于分子的信息存储的有吸引力的候选物。 新的附件程序简单，可以在短时间内完成，需要最少量的材料，与不同的分子官能团相容，并在某些情况下提供前所未有的附着图案。 这些特征大大增强了分子材料与创建混合分子/半导体信息存储设备所需的处理步骤的集成。
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公开(公告)号：US20100330284A1
公开(公告)日：2010-12-30
申请号：US12265990
申请日：2008-11-06
IPC分类号： B05D3/10
CPC分类号： H01L51/0089 , B82Y10/00 , H01L51/0003 , H01L51/0595
摘要： This invention provides novel methods for the formation of redox-active polymers attached to surfaces. In certain embodiments, the methods involve providing redox-active molecules bearing at least a first reactive site or group and a second reactive site or group; and contacting the surface with the redox-active molecules where the contacting is under conditions that result in attachment of said redox-active molecules to said surface via the first reactive site or group and attachment of redox-active molecules via the second reactive site or group, to the redox-active molecules attached to the surface thereby forming a polymer attached to said surface where the polymers comprise at least two of said redox-active molecules.
摘要翻译： 本发明提供了形成附着于表面的氧化还原活性聚合物的新方法。 在某些实施方案中，所述方法包括提供至少具有第一反应位点或基团和第二反应位点或基团的氧化还原活性分子; 以及使所述表面与所述氧化还原活性分子接触，其中所述接触在导致所述氧化还原活性分子经由所述第一反应位点或基团连接到所述表面的条件下，并且经由所述第二反应性位点或基团连接氧化还原活性分子 附着于表面的氧化还原活性分子，从而形成连接到所述表面的聚合物，其中聚合物包含至少两种所述氧化还原活性分子。
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公开(公告)号：US07452572B1
公开(公告)日：2008-11-18
申请号：US10800147
申请日：2004-03-11
CPC分类号： H01L51/0089 , B82Y10/00 , H01L51/0003 , H01L51/0595
摘要： This invention provides novel methods for the formation of redox-active polymers attached to surfaces. In certain embodiments, the methods involve providing redox-active molecules bearing at least a first reactive site or group and a second reactive site or group; and contacting the surface with the redox-active molecules where the contacting is under conditions that result in attachment of said redox-active molecules to said surface via the first reactive site or group and attachment of redox-active molecules via the second reactive site or group, to the redox-active molecules attached to the surface thereby forming a polymer attached to said surface where the polymers comprise at least two of said redox-active molecules.
摘要翻译： 本发明提供了形成附着于表面的氧化还原活性聚合物的新方法。 在某些实施方案中，所述方法包括提供至少具有第一反应位点或基团和第二反应位点或基团的氧化还原活性分子; 以及使所述表面与所述氧化还原活性分子接触，其中所述接触在导致所述氧化还原活性分子经由所述第一反应位点或基团连接到所述表面的条件下，并且经由所述第二反应性位点或基团连接氧化还原活性分子 附着于表面的氧化还原活性分子，从而形成连接到所述表面的聚合物，其中聚合物包含至少两种所述氧化还原活性分子。
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公开(公告)号：US20080280047A1
公开(公告)日：2008-11-13
申请号：US10800147
申请日：2004-03-11
CPC分类号： H01L51/0089 , B82Y10/00 , H01L51/0003 , H01L51/0595
摘要： This invention provides novel methods for the formation of redox-active polymers attached to surfaces. In certain embodiments, the methods involve providing redox-active molecules bearing at least a first reactive site or group and a second reactive site or group; and contacting the surface with the redox-active molecules where the contacting is under conditions that result in attachment of said redox-active molecules to said surface via the first reactive site or group and attachment of redox-active molecules via the second reactive site or group, to the redox-active molecules attached to the surface thereby forming a polymer attached to said surface where the polymers comprise at least two of said redox-active molecules.
摘要翻译： 本发明提供了形成附着于表面的氧化还原活性聚合物的新方法。 在某些实施方案中，所述方法包括提供至少具有第一反应位点或基团和第二反应位点或基团的氧化还原活性分子; 以及使所述表面与所述氧化还原活性分子接触，其中所述接触在导致所述氧化还原活性分子经由所述第一反应位点或基团连接到所述表面的条件下，并且经由所述第二反应性位点或基团连接氧化还原活性分子 附着于表面的氧化还原活性分子，从而形成连接到所述表面的聚合物，其中聚合物包含至少两种所述氧化还原活性分子。
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公开(公告)号：US06943054B2
公开(公告)日：2005-09-13
申请号：US10628868
申请日：2003-07-28
CPC分类号： H01M4/60 , B82Y10/00 , G11C13/0014 , G11C13/0016 , H01L51/0002 , H01L51/0003 , H01L51/0008 , H01L51/0026 , H01L51/0075 , H01L51/0077 , H01L51/0595 , H01L51/4213 , H01M14/005 , Y02E10/549
摘要： This invention provides a new procedure for attaching molecules to semiconductor surfaces, in particular silicon. The molecules, which include, but are not limited to porphyrins and ferrocenes, have been previously shown to be attractive candidates for molecular-based information storage. The new attachment procedure is simple, can be completed in short times, requires minimal amounts of material, is compatible with diverse molecular functional groups, and in some instances affords unprecedented attachment motifs. These features greatly enhance the integration of the molecular materials into the processing steps that are needed to create hybrid molecular/semiconductor information storage devices.
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9.发明授权Multistate triple-decker dyads in three distinct architectures for information storage applications 失效用于信息存储应用的三种不同架构中的多层三层二层公开(公告)号：US06728129B2
公开(公告)日：2004-04-27
申请号：US10079938
申请日：2002-02-19
IPC分类号： G11C1100
CPC分类号： G11C13/0014 , B82Y10/00 , G11B9/14 , G11B9/149 , G11C11/34 , G11C11/5664 , G11C13/0009 , G11C13/025 , G11C2213/77
摘要： This invention provides novel high density memory devices that are electrically addressable permitting effective reading and writing, that provide a high memory density (e.g., 1015 bits/cm3), that provide a high degree of fault tolerance, and that are amenable to efficient chemical synthesis and chip fabrication. The devices are intrinsically latchable, defect tolerant, and support destructive or non-destructive read cycles. In a preferred embodiment, the device comprises a fixed electrode electrically coupled to a storage medium having a multiplicity of different and distinguishable oxidation states wherein data is stored in said oxidation states by the addition or withdrawal of one or more electrons from said storage medium via the electrically coupled electrode. The storage medium typically comprises a storage molecule that is a triple-decker sandwich heterodimer. Such dimers can provide 8 or more oxidation states and permit the storage of at least 3 bits per molecule.
摘要翻译： 本发明提供了可提供高存储密度（例如，10,15bit / cm 3）的电位置可允许有效读/写的新型高密度存储器件，其提供高度的容错能力，并且 适合有效的化学合成和芯片制造。 器件本质上可锁定，缺陷容忍，并支持破坏性或非破坏性的读取周期。 在优选实施例中，该器件包括电耦合到存储介质的固定电极，该存储介质具有多种不同且可区分的氧化态，其中通过经由该存储介质从所述存储介质中添加或撤出一个或多个电子而将数据存储在所述氧化态中 电耦合电极。 存储介质通常包含作为三层三明治夹心异二聚体的储存分子。 这种二聚体可以提供8个或更多个氧化态，并允许每分子存储至少3位。
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10.发明授权公开(公告)号：US06674121B2
公开(公告)日：2004-01-06
申请号：US10017999
申请日：2001-12-14
IPC分类号： H01L29792
CPC分类号： H01L27/283 , B82Y10/00 , G11C11/5664 , G11C13/0009 , G11C13/0014 , G11C13/0016 , G11C2213/53 , H01L51/052 , H01L51/0529 , Y10S977/721 , Y10S977/887 , Y10S977/937
摘要： A method and/or system and/or apparatus for a molecular-based FET device (an m-FET) uses charge storing molecules between a gate and channel of an FET-type transistor. Further embodiments describe fabrication methods for using combinations of standard practices in lithography and synthetic chemistry and novel elements.
摘要翻译： 用于基于分子的FET器件（m-FET）的方法和/或系统和/或设备在FET型晶体管的栅极和沟道之间使用电荷存储分子。 另外的实施例描述了使用光刻和合成化学中的标准实践的组合以及新颖元件的制造方法。
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