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    MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING SELECTIVE AREA GROWTH
    2.
    发明申请
    MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING SELECTIVE AREA GROWTH 审中-公开
    单色白色和全彩色发光二极管使用选择区域增长

    公开(公告)号：US20100148147A1

    公开(公告)日：2010-06-17

    申请号：US12337580

    申请日：2008-12-17

    申请人： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson

    发明人： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson

    IPC分类号： H01L21/20 ,  H01L33/00

    CPC分类号： H01L33/08 ,  H01L33/24

    摘要： An embodiment is a method and apparatus for a white or full-color light-emitting diode. A first mask having a first pattern is applied over surface of an n-type layer. A first active region is grown selectively and including single or multiple quantum wells (QWs) of a first active color to cause a first wavelength shift in a first vicinity area around the first pattern. The first wavelength shift results in an emission of a first desired color according to the first pattern.

    摘要翻译： 一个实施例是用于白色或全彩色发光二极管的方法和装置。 具有第一图案的第一掩模施加在n型层的表面上。 选择性地生长第一有源区，并且包括第一有源颜色的单个或多个量子阱（QW），以在围绕第一图案的第一附近区域中引起第一波长偏移。 第一波长偏移导致根据第一图案的第一所需颜色的发射。

    MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING OPTICALLY PUMPED MULTIPLE QUANTUM WELLS
    3.
    发明申请
    MONOLITHIC WHITE AND FULL-COLOR LIGHT EMITTING DIODES USING OPTICALLY PUMPED MULTIPLE QUANTUM WELLS 有权
    单色白色和全彩色发光二极管使用光泵浦多个量子阱

    公开(公告)号：US20100148146A1

    公开(公告)日：2010-06-17

    申请号：US12337572

    申请日：2008-12-17

    申请人： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson

    发明人： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson

    IPC分类号： H01L33/00 ,  H01L21/02

    CPC分类号： H01L33/08

    摘要： An embodiment is a method and apparatus for a white or full-color light-emitting diode. First single or multiple quantum wells (QWs) at a first wavelength are formed at an active region between a p-type layer and an n-type layer of a light-emitting diode. Multiple passive quantum wells (QWs) are formed within the p-type layer or the n-type layer. The multiple passive QWs are optically pumped by the first or single multiple QWs to generate a desired color.

    摘要翻译： 一个实施例是用于白色或全彩色发光二极管的方法和装置。 在第一波长处的第一单个或多个量子阱（QW）形成在发光二极管的p型层和n型层之间的有源区。 在p型层或n型层内形成多个被动量子阱（QW）。 多个无源QW由第一或单个多个QW光学泵浦以产生期望的颜色。

    Method For Preparing Films And Devices Under High Nitrogen Chemical Potential
    4.
    发明申请
    Method For Preparing Films And Devices Under High Nitrogen Chemical Potential 审中-公开
    在高氮化学势下制备薄膜和器件的方法

    公开(公告)号：US20100006023A1

    公开(公告)日：2010-01-14

    申请号：US12171623

    申请日：2008-07-11

    申请人： David P. Bour ,  Peter Kiesel ,  Christopher L. Chua ,  Noble M. Johnson ,  Zhihong Yang ,  John E. Northrup

    发明人： David P. Bour ,  Peter Kiesel ,  Christopher L. Chua ,  Noble M. Johnson ,  Zhihong Yang ,  John E. Northrup

    IPC分类号： C30B23/02 ,  C30B35/00

    CPC分类号： C30B25/02 ,  C30B25/14 ,  C30B29/403

    摘要： Nitride semiconductor films, such as for use in solid state light emitting devices and electronic devices, are fabricated in an environment of relatively high nitrogen potential such that nitrogen vacancies in the growing film are reduced. A reactor design, and method for its use, provide high nitrogen precursor partial pressure, precracking of the precursor using a catalytic metal surface, prepyrolyzing the precursor, using catalytically-cracked molecular nitrogen as a nitrogen precursor, and/or exposing the surface to an ambient which is extremely rich in active nitrogen species. Improved efficiency for light emitting devices, particularly in the blue and green wavelengths and improve transport properties in nitride electronic devices, i.e., improved performance from nitride-based devices such as InGaAlN laser diodes, transistors, and light emitting diodes is thereby provided.

    摘要翻译： 氮化物半导体膜，例如用于固态发光器件和电子器件的氮化物半导体膜，在氮势高的环境下制造，使得生长膜中的氮空位减少。 反应器设计及其使用方法提供高氮前体分压，使用催化金属表面预裂化前体，使用催化裂化的分子氮作为氮前体预先分解前体，和/或将表面暴露于 非常丰富的活性氮种类的环境。 因此，提供了发光器件的效率，特别是蓝色和绿色波长的效率，并提高了氮化物电子器件的传输性能，即从诸如InGaAlN激光二极管，晶体管和发光二极管的氮化物基器件的改进性能。

    Monolithic white and full-color light emitting diodes using optically pumped multiple quantum wells
    6.
    发明授权
    Monolithic white and full-color light emitting diodes using optically pumped multiple quantum wells 有权
    使用光泵浦多量子阱的单片白色和全色发光二极管

    公开(公告)号：US07851242B2

    公开(公告)日：2010-12-14

    申请号：US12337572

    申请日：2008-12-17

    申请人： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson

    发明人： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson

    IPC分类号： H01L21/00

    CPC分类号： H01L33/08

    摘要： An embodiment is a method and apparatus for a white or full-color light-emitting diode. First single or multiple quantum wells (QWs) at a first wavelength are formed at an active region between a p-type layer and an n-type layer of a light-emitting diode. Multiple passive quantum wells (QWs) are formed within the p-type layer or the n-type layer. The multiple passive QWs are optically pumped by the first or single multiple QWs to generate a desired color.

    摘要翻译： 一个实施例是用于白色或全彩色发光二极管的方法和装置。 在第一波长处的第一单个或多个量子阱（QW）形成在发光二极管的p型层和n型层之间的有源区。 在p型层或n型层内形成多个被动量子阱（QW）。 多个无源QW由第一或单个多个QW光学泵浦以产生期望的颜色。

    Laser diode with high indium active layer and lattice matched cladding layer
    9.
    发明授权
    Laser diode with high indium active layer and lattice matched cladding layer 有权
    具有高铟活性层和晶格匹配包层的激光二极管

    公开(公告)号：US08000366B2

    公开(公告)日：2011-08-16

    申请号：US12276173

    申请日：2008-11-21

    申请人： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson ,  Zhihong Yang

    发明人： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson ,  Zhihong Yang

    IPC分类号： H01S5/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/2013 ,  H01S5/3216

    摘要： A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and/or a short period superlattice structures of, for example, a plurality of alternating layer pairs of aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and gallium indium nitride in the ratio of GasIn1-sN, providing a multi-quantum barrier (MQB) effect. Lattice matching of the cladding layer(s) and active layer reduce or eliminate strain, and the materials chosen for the cladding layers optimizes optical and carrier confinement. Alternatively, the lattice parameters may be selected to provide strain balanced MQBs, e.g., where the barrier layers are tensile-strained and the well layers compressed.

    摘要翻译： 具有高铟含量的半导体激光二极管设置有格子匹配包层。 包覆层中的一个或两个可以包括Al x Ga 1-x-y In y N的比例的/或比如多个交替层叠的铝镓铟镓的短周期超晶格结构的块状铝镓氮化铟， 的Al x Ga 1-x-y In y N和氮化镓铟，其比例为GasIn1-sN，提供多量子势垒（MQB）效应。 包覆层和有源层的晶格匹配减少或消除应变，为包层选择的材料优化光学和载流子限制。 或者，可以选择晶格参数以提供应变平衡的MQB，例如，其中阻挡层是拉伸应变的，并且阱层被压缩。

    Laser Diode With High Indium Active Layer And Lattice Matched Cladding Layer
    10.
    发明申请
    Laser Diode With High Indium Active Layer And Lattice Matched Cladding Layer 有权
    具有高铟活性层和晶格匹配包层的激光二极管

    公开(公告)号：US20100127236A1

    公开(公告)日：2010-05-27

    申请号：US12276173

    申请日：2008-11-21

    申请人： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson ,  Zhihong Yang

    发明人： David P. Bour ,  Christopher L. Chua ,  Noble M. Johnson ,  Zhihong Yang

    IPC分类号： H01L31/00 ,  H01L33/00

    CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0213 ,  H01S5/2013 ,  H01S5/3216

    摘要： A semiconductor laser diode with a high indium content is provided with a lattice matched cladding layer or layers. One or both of the cladding layers may comprise bulk aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and/or a short period superlattice structures of, for example, a plurality of alternating layer pairs of aluminum gallium indium nitride in the ratio of AlxGa1-x-yInyN and gallium indium nitride in the ratio of GasIn1-sN, providing a multi-quantum barrier (MQB) effect. Lattice matching of the cladding layer(s) and active layer reduce or eliminate strain, and the materials chosen for the cladding layers optimizes optical and carrier confinement. Alternatively, the lattice parameters may be selected to provide strain balanced MQBs, e.g., where the barrier layers are tensile-strained and the well layers compressed.

    摘要翻译： 具有高铟含量的半导体激光二极管设置有格子匹配包层。 包覆层中的一个或两个可以包括Al x Ga 1-x-y In y N的比例的/或比如多个交替层叠的铝镓铟镓的短周期超晶格结构的块状铝镓氮化铟， 的Al x Ga 1-x-y In y N和氮化镓铟，其比例为GasIn1-sN，提供多量子势垒（MQB）效应。 包覆层和有源层的晶格匹配减少或消除应变，为包层选择的材料优化光学和载流子限制。 或者，可以选择晶格参数以提供应变平衡的MQB，例如，其中阻挡层是拉伸应变的，并且阱层被压缩。