BENT LAYERED STRUCTURE AND METHODS RELATING THERETO
    1.
    发明申请
    BENT LAYERED STRUCTURE AND METHODS RELATING THERETO 审中-公开
    BENT层状结构与方法相关

    公开(公告)号:US20130194814A1

    公开(公告)日:2013-08-01

    申请号:US13362171

    申请日:2012-01-31

    IPC分类号: F21V21/00 B32B3/04

    摘要: A bent layered structure is disclosed having a top conductive layer and a dielectric layer. The dielectric layer is a polyimide derived from at least 70 mole percent aromatic dianhydride based upon total dianhydride content of the polyimide and at least 70 mole percent aromatic diamine based upon total diamine content of the polyimide. The bent layered structure has a radius of at least 2 mm and a bend angle of at least 45 degrees at least once along a longitudinal or at least once parallel to the longitudinal axis or both and maintains a 150 to 350 V/micron breakdown voltage.

    摘要翻译: 公开了具有顶部导电层和电介质层的弯曲分层结构。 介电层是基于聚酰亚胺的总二氢化物含量至少70摩尔%的芳族二酐衍生的聚酰亚胺和基于聚酰亚胺的总二胺含量的至少70摩尔%芳族二胺。 弯曲的分层结构具有至少2mm的半径和至少45度的弯曲角,沿纵向或至少一次平行于纵向轴线或两者均至少一次,并且保持150至350V /微米的击穿电压。