公开(公告)号：US4141030A

公开(公告)日：1979-02-20

申请号：US751480

申请日：1976-12-16

申请人： Dieter Eisele ,  Klaus Weimann

发明人： Dieter Eisele ,  Klaus Weimann

IPC分类号： H01L23/34 ,  H01L21/52 ,  H01L23/051 ,  H01L23/36 ,  H01L23/48 ,  H01L23/42 ,  H01L23/44 ,  H01L23/46

CPC分类号： H01L23/051 ,  H01L23/36 ,  H01L24/72 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01082 ,  H01L2924/12036 ,  H01L2924/1301

摘要： A high-power semiconductor assembly of the disk-cell construction has an insulating housing and exhibits electrical and thermal pressure-contacting of the semiconductor chip. At least two zones of different conduction types are provided within the chip and the same is clamped, in an essentially doubly symmetrical arrangement with respect to the mid-plane of the chip and the central axis perpendicular thereto, with the interposition of pressure plates, heat-conducting paste, and electrodes, particularly cup-shaped electrodes with their open sides disposed away from the main surfaces of the semiconductor chip, and between two terminal electrodes serving as heat sinks.

摘要翻译： 盘式电池结构的大功率半导体组件具有绝缘壳体并且表现出半导体芯片的电压和热压接触。 至少两个不同导电类型的区域设置在芯片内，并且相对于芯片的中间平面和与其垂直的中心轴线以相当于双重对称的方式被夹紧，并且插入压力板，加热 导电膏和电极，特别是其开口侧远离半导体芯片的主表面以及用作散热器的两个端子电极之间的杯形电极。

公开(公告)号：US4426659A

公开(公告)日：1984-01-17

申请号：US252208

申请日：1981-04-08

申请人： Patrick de Bruyne ,  Andre Jaecklin ,  Dieter Eisele

发明人： Patrick de Bruyne ,  Andre Jaecklin ,  Dieter Eisele

IPC分类号： H01L23/04 ,  H01L23/051 ,  H01L23/16 ,  H01L23/60 ,  H01L23/02

CPC分类号： H01L23/60 ,  H01L23/051 ,  H01L23/16 ,  H01L2924/0002

摘要： A housing for high-power semiconductor components is disclosed. The housing consists of an insulator which forms the lateral boundary of the housing, a high-power semiconductor component which is bounded on either side by intermediate disks formed of tungsten or molybdenum, and outer disks formed of copper. The insulator and outer disks are connected by connecting members which may be coated with a protective layer and which surround a protective ring made of a high temperature material such as a ceramic or temperature resistant plastic. The tungsten or molybdenum intermediate disks have a higher total specific energy absorption capacity than does copper.

摘要翻译： 公开了一种用于大功率半导体部件的壳体。 壳体由形成壳体的侧边界的绝缘体，由钨或钼形成的中间盘在任一侧限定的高功率半导体部件和由铜形成的外部圆盘构成。 绝缘体和外盘通过连接构件连接，连接构件可以涂覆有保护层，并且围绕着由诸如陶瓷或耐温塑料的高温材料制成的保护环。 钨或钼中间盘具有比铜更高的总比能吸收能力。

公开(公告)号：US4302767A

公开(公告)日：1981-11-24

申请号：US73522

申请日：1979-09-07

申请人： Dieter Eisele

发明人： Dieter Eisele

IPC分类号： H01L21/52 ,  H01L23/04 ,  H01L23/051 ,  H01L23/48 ,  H01L23/42 ,  H01L23/44 ,  H01L23/46

CPC分类号： H01L23/051 ,  H01L24/72 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01076 ,  H01L2924/01082 ,  H01L2924/12043 ,  H01L2924/13033

摘要： Controlled power semiconductor component, having a disc-shaped silicon body with a surface on each side thereof, two insulated ductile electrodes each having surfaces on each side thereof, one of the surfaces of each of the ductile electrodes being in pressure contact with one of the surfaces of the silicon body, two pressure-contact discs each having an edge, and a surface on one side thereof in pressure contact with the other of the surfaces of the ductile electrodes, at least one control electrode connection disposed at a respective ductile electrode and contact disc on one of the sides of the silicon body, a bipartite annular cage divided along its diameter and having two polygonal recesses formed therein forming polygonal surfaces on the cage, and two inner flanges integral with the cage and bordering the recesses the flanges being disposed one above the other in axial direction of the silicon body, the polygonal surfaces on the cage formed by the recesses being tensionally connected to the edges of the contact discs.

摘要翻译： 控制功率半导体部件具有在其每一侧上具有表面的圆盘状硅体，每个侧面具有表面的两个绝缘延性电极，每个延性电极的每个表面中的一个表面与 硅体的表面，每个具有边缘的两个压力接触盘和其一侧的表面与延性电极的另一个表面压力接触，设置在相应的延性电极处的至少一个控制电极连接和 接触盘，其沿着其直径分开并具有形成在其上的两个多边形凹部，形成在保持架上的多边形表面的两部分环形笼，以及两个与保持架成一体的内凸缘，与设置的凸缘接合。 在硅体的轴向上彼此之间，由凹部形成的保持架上的多边形表面是紧密连接的 接触到接触盘的边缘。

公开(公告)号：US4383355A

公开(公告)日：1983-05-17

申请号：US198101

申请日：1980-02-21

申请人： Dieter Eisele

发明人： Dieter Eisele

IPC分类号： H01L23/04 ,  H01L21/50 ,  H01L23/051 ,  H01L23/10 ,  H01L23/48 ,  H01L21/52

CPC分类号： H01L24/72 ,  H01L21/50 ,  H01L23/051 ,  H01L23/10 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/12036 ,  H01L2924/3025 ,  Y10T29/49169

摘要： The invention concerns a method for the construction of a sealed disc cell housing for a disc shaped semiconductor body (1), which consists, essentially, of a hollow-cylindrical insulation housing (9) and two pressure contact bodies (4). The latter are provided with seal rings (12) comprising tubing sections of a plastic material which has been treated by electron irradiation and is expandable by heating. The contact bodies (4) are inserted into the insulation housing (9) and the seal ring (12) heated, whereby the wall thickness of the tubing sections (12) increases seal the gap between the pressure contact bodies (4) and the insulation housing (9).

摘要翻译： PCT No.PCT / CH79 / 00070 Sec。 371日期1980年2月21日 102（e）日期1980年2月21日PCT提交日期为1979年5月18日PCT公布。 出版物WO80 / 00640 日本1984年4月3日。本发明涉及一种用于构造用于盘状半导体主体（1）的密封盘式电池壳体的方法，其基本上由中空圆柱形绝缘壳体（9）和两个压力接触 尸体（4）。 后者设置有密封环（12），其包括已经通过电子辐射处理并且可通过加热而膨胀的塑料材料的管段。 接触体（4）被插入到绝缘壳体（9）中并且密封环（12）被加热，由此管部分（12）的壁厚增加了压力接触体（4）和绝缘体 住房（9）。

公开(公告)号：US4254590A

公开(公告)日：1981-03-10

申请号：US73791

申请日：1979-09-10

申请人： Dieter Eisele ,  Jurgen Pape ,  Armin Hochhut

发明人： Dieter Eisele ,  Jurgen Pape ,  Armin Hochhut

IPC分类号： B24B13/00 ,  H01L21/302 ,  H01L21/304 ,  B24B1/00

CPC分类号： B24B13/0043 ,  H01L21/302 ,  H01L21/304

摘要： A method for the production of a disk-shaped silicon semiconductor component with at least two adjoining zones of opposite type conductivity and different doping strengths using a lapping disk which includes the steps of positioning and semi-conductor component adjacent the lapping disk, subjecting the semiconductor disk to a suction pressure on its side opposite the lapping disk so as to be bowed up from an initial lapping plane with a radius of curvature corresponding to a desired angle, lapping the semiconductor disk with the rotating lapping disk and beveling off the bounding surface of the semiconductor disk opposite the plane of a pn-junction separating the two zones.

摘要翻译： 一种使用研磨盘生产具有相反导电性和不同掺杂强度的至少两个邻接区域的盘形硅半导体部件的方法，该研磨盘包括邻近研磨盘的定位和半导体部件的步骤，使半导体 盘到与研磨盘相对的一侧的吸入压力，以便从初始的研磨平面向上弯曲，其曲率半径对应于所需的角度，用旋转的研磨盘研磨半导体盘并使斜面从 半导体盘与分离两个区的pn结的平面相对。