公开(公告)号：US20080257254A1

公开(公告)日：2008-10-23

申请号：US11736390

申请日：2007-04-17

申请人： Dieter Linke ,  Matthias Heuer ,  Fritz Kirscht ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

发明人： Dieter Linke ,  Matthias Heuer ,  Fritz Kirscht ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

IPC分类号： C30B15/20

CPC分类号： C30B11/002 ,  C01B33/037 ,  C30B11/003 ,  C30B28/06 ,  C30B29/06 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1008

摘要： Techniques for the formation of a large grain, multi-crystalline semiconductor ingot and include forming a silicon melt in a crucible, the crucible capable of locally controlling thermal gradients within the silicon melt. The local control of thermal gradients preferentially forms silicon crystals in predetermined regions within the silicon melt by locally reducing temperatures is the predetermined regions. The method and system control the rate at which the silicon crystals form using local control of thermal gradients for inducing the silicon crystals to obtain preferentially maximal sizes and, thereby, reducing the number of grains for a given volume. The process continues the thermal gradient control and the rate control step to form a multicrystalline silicon ingot having reduced numbers of grains for a given volume of the silicon ingot.

摘要翻译： 用于形成大晶粒多晶半导体锭的技术包括在坩埚中形成硅熔体，所述坩埚能够局部地控制硅熔体内的热梯度。 热梯度的局部控制优先在硅熔体内的预定区域中形成硅晶体，其中局部还原温度是预定区域。 该方法和系统通过局部控制热梯度来控制硅晶体的形成速率，以诱导硅晶体优先获得最大尺寸，从而减少给定体积的晶粒数。 该过程继续进行热梯度控制和速率控制步骤以形成对于给定体积的硅锭具有减少的晶粒数量的多晶硅锭。

公开(公告)号：US20110211995A1

公开(公告)日：2011-09-01

申请号：US13034956

申请日：2011-02-25

申请人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

发明人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

IPC分类号： B06B1/00 ,  B01L7/00 ,  B01D12/00

CPC分类号： H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1024

摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.

摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。

公开(公告)号：US07955433B2

公开(公告)日：2011-06-07

申请号：US11828734

申请日：2007-07-26

申请人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

发明人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

IPC分类号： C01B33/02 ,  C01B33/037 ,  C30B15/10 ,  C30B15/12

CPC分类号： H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1024

摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.

摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。

公开(公告)号：US20090028773A1

公开(公告)日：2009-01-29

申请号：US11828734

申请日：2007-07-26

申请人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

发明人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

IPC分类号： C01B33/037 ,  B01J19/02

CPC分类号： H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1024

摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.

摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。

公开(公告)号：US08882912B2

公开(公告)日：2014-11-11

申请号：US13034956

申请日：2011-02-25

申请人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

发明人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

IPC分类号： C30B11/00 ,  H01L31/18

CPC分类号： H01L31/1804 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T117/1024

摘要： Techniques for the formation of a silicon ingot using a low-grade silicon feedstock include forming within a crucible device a molten silicon from a low-grade silicon feedstock and performing a directional solidification of the molten silicon to form a silicon ingot within the crucible device. The directional solidification forms a generally solidified quantity of silicon and a generally molten quantity of silicon. The method and system include removing from the crucible device at least a portion of the generally molten quantity of silicon while retaining within the crucible device the generally solidified quantity of silicon. Controlling the directional solidification of the generally solidified quantity of silicon, while removing the more contaminated molten silicon, results in a silicon ingot possessing a generally higher grade of silicon than the low-grade silicon feedstock.

摘要翻译： 使用低等级硅原料形成硅锭的技术包括在坩埚装置内形成来自低品位硅原料的熔融硅，并执行熔融硅的定向凝固，以在坩埚装置内形成硅锭。 定向凝固形成通常固化的硅和一般熔融量的硅。 该方法和系统包括从坩埚装置移除至少一部分一般熔融的硅，同时在坩埚装置内保持大致固化的硅量。 控制一般凝固量的硅的定向凝固，同时去除更多污染的熔融硅，导致硅锭具有比低等级硅原料更高级别的硅。

公开(公告)号：US20080197454A1

公开(公告)日：2008-08-21

申请号：US11676095

申请日：2007-02-16

申请人： Jean Patrice Rakotoniana ,  Matthias Heuer ,  Fritz Kirscht ,  Dieter Linke ,  Kamel Ounadjela

发明人： Jean Patrice Rakotoniana ,  Matthias Heuer ,  Fritz Kirscht ,  Dieter Linke ,  Kamel Ounadjela

IPC分类号： H01L29/30 ,  H01L21/306 ,  H01L21/322

CPC分类号： H01L31/186 ,  H01L21/322 ,  H01L31/04 ,  Y02E10/50 ,  Y02P70/521

摘要： Techniques are here disclosed for a solar cell pre-processing. The method and system remove impurities from low-grade crystalline semiconductor wafers and include forming a low-grade semiconductor wafer having a substrate having high impurity content. The process and system damage at least one surface of the semiconductor wafer either in the semiconductor wafer forming step or in a separate step to form a region on the surface that includes a plurality of gettering centers. The gettering centers attract impurities from the substrate during subsequent processing. The subsequent processes include diffusing impurities from the substrate using a phosphorus gettering process that includes impregnating the surface with a phosphorus material for facilitating the formation of impurity clusters associated with the gettering centers. Then, the process and system remove from the a portion having the impregnated phosphorus material and the impurity clusters, thereby yielding a semiconductor wafer having a substrate having a generally reduced impurity content.

摘要翻译： 这里公开了用于太阳能电池预处理的技术。 该方法和系统从低级晶体半导体晶片中除去杂质，并且包括形成具有杂质含量高的衬底的低等级半导体晶片。 该工艺和系统在半导体晶片形成步骤中或在单独的步骤中损坏半导体晶片的至少一个表面，以在表面上形成包括多个吸气中心的区域。 吸附中心在后续处理过程中从衬底吸引杂质。 随后的方法包括使用磷吸除方法从基底扩散杂质，该磷吸收方法包括用磷材料浸渍表面以便于形成与吸气中心相关的杂质簇。 然后，从具有浸渍的磷材料和杂质簇的部分去除工艺和系统，从而产生具有通常降低的杂质含量的衬底的半导体晶片。

公开(公告)号：US07651566B2

公开(公告)日：2010-01-26

申请号：US11769109

申请日：2007-06-27

申请人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

发明人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

IPC分类号： C30B15/00

CPC分类号： C30B29/06 ,  C30B11/006 ,  Y10T117/1024

摘要： Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides a predominantly p-type semiconductor for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of aluminum or/and gallium. The process further melts the silicon feedstock together with a predetermined amount of aluminum or/and gallium to form a molten silicon solution from which to perform directional solidification and, by virtue of adding aluminum or/and gallium, maintains the homogeneity the resistivity of the silicon ingot throughout the silicon ingot. In the case of feedstock silicon leading to low resistivity in respective ingots, typically below 0.4 Ωcm, a balanced amount of phosphorus can be optionally added to aluminum or/and gallium. Adding phosphorus becomes mandatory at very low resistivity, typically close to 0.2 Ωcm and slightly below.

摘要翻译： 用于控制从补偿的原料硅材料形成硅锭的电阻率的技术准备一个补偿的，升级的冶金硅原料以便熔化以形成硅熔体。 补偿的，升级的冶金硅原料提供了主要为p型半导体，其中该方法评估硼和磷的浓度并加入预定量的铝或/和镓。 该方法进一步将硅原料与预定量的铝或/和镓一起熔化以形成熔融硅溶液，从而进行定向凝固，并且通过加入铝或/和镓，保持硅的电阻率的均匀性 锭遍及整个硅锭。 在原料硅的情况下，导致相应晶锭的低电阻率，通常低于0.4欧米加，可以任选地将平衡量的磷加入到铝或/和镓中。 在非常低的电阻率下，添加磷是强制性的，通常接近0.2欧姆和稍低。

公开(公告)号：US20090026423A1

公开(公告)日：2009-01-29

申请号：US11769109

申请日：2007-06-27

申请人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

发明人： Fritz Kirscht ,  Vera Abrosimova ,  Matthias Heuer ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

IPC分类号： H01B1/22 ,  C30B9/00

CPC分类号： C30B29/06 ,  C30B11/006 ,  Y10T117/1024

摘要： Techniques for controlling resistivity in the formation of a silicon ingot from compensated feedstock silicon material prepares a compensated, upgraded metallurgical silicon feedstock for being melted to form a silicon melt. The compensated, upgraded metallurgical silicon feedstock provides a predominantly p-type semiconductor for which the process assesses the concentrations of boron and phosphorus and adds a predetermined amount of aluminum or/and gallium. The process further melts the silicon feedstock together with a predetermined amount of aluminum or/and gallium to form a molten silicon solution from which to perform directional solidification and, by virtue of adding aluminum or/and gallium, maintains the homogeneity the resistivity of the silicon ingot throughout the silicon ingot. In the case of feedstock silicon leading to low resistivity in respective ingots, typically below 0.4Ω cm, a balanced amount of phosphorus can be optionally added to aluminum or/and gallium. Adding phosphorus becomes mandatory at very low resistivity, typically close to 0.2Ω cm and slightly below.

摘要翻译： 用于控制从补偿的原料硅材料形成硅锭中的电阻率的技术准备补偿的升级冶金硅原料以便熔化以形成硅熔体。 补偿的，升级的冶金硅原料提供了主要为p型半导体，其中该方法评估硼和磷的浓度并加入预定量的铝或/和镓。 该方法进一步将硅原料与预定量的铝或/和镓一起熔化以形成熔融硅溶液，从而进行定向凝固，并且通过加入铝或/和镓，保持硅的电阻率的均匀性 锭遍及整个硅锭。 在原料硅导致相应晶锭低电阻率的情况下，通常低于0.4Omcm，可以任选地将平衡量的磷加入到铝或/和镓中。 在非常低的电阻率下，添加磷是强制性的，通常接近0.2OΩcm并略低于磷。

公开(公告)号：US20080178793A1

公开(公告)日：2008-07-31

申请号：US11700391

申请日：2007-01-31

申请人： Matthias Heuer ,  Fritz Kirscht ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

发明人： Matthias Heuer ,  Fritz Kirscht ,  Dieter Linke ,  Jean Patrice Rakotoniana ,  Kamel Ounadjela

IPC分类号： C30B9/04

CPC分类号： C30B29/06 ,  C30B11/04 ,  C30B11/14 ,  Y10T117/1092

摘要： Techniques for the formation of a higher purity semiconductor ingot using a low purity semiconductor feedstock include associating within a crucible a low-grade silicon feedstock, which crucible forms a process environment of said molten silicon. The process associates with the low-grade silicon feedstock, a quantity of the at least one metal and includes forming within the crucible a molten solution (e.g., a binary or ternary solution) of molten silicon and the metal at a temperature below the melting temperature of said low-grade silicon feedstock. A silicon seed crystal associates with the molten solution within the crucible for inducing directional silicon crystallization. The process further forms a silicon ingot from a portion of the molten solution in association with the silicon seed. The silicon ingot includes at least one silicon crystalline formation grown in the induced directional silicon crystallization process. The resulting silicon ingot has a silicon purity substantially exceeding the silicon purity of said low grade silicon feedstock.

摘要翻译： 使用低纯度半导体原料形成较高纯度半导体锭的技术包括在坩埚内将低级硅原料缔合，该坩埚形成所述熔融硅的工艺环境。 该方法与低级硅原料相关联，一定量的至少一种金属，并且包括在坩埚内形成熔融硅和金属在低于熔融温度的温度下的熔融溶液（例如二元或三元溶液） 的低级硅原料。 硅晶体与坩埚内的熔融溶液缔合，用于诱导定向硅结晶。 该方法进一步从与硅晶种相关联的熔融溶液的一部分形成硅锭。 硅锭包括在诱导的定向硅结晶过程中生长的至少一个硅晶形。 所得硅锭的硅纯度基本上超过所述低等级硅原料的硅纯度。

公开(公告)号：US20110309478A1

公开(公告)日：2011-12-22

申请号：US13218632

申请日：2011-08-26

申请人： Fritz Kirscht ,  Kamel Ounadjela ,  Jean Patrice Rakotoniana ,  Dieter Linke

发明人： Fritz Kirscht ,  Kamel Ounadjela ,  Jean Patrice Rakotoniana ,  Dieter Linke

IPC分类号： H01L29/30 ,  H01L21/306

CPC分类号： H01L31/18 ,  H01L21/304 ,  H01L21/3221 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521 ,  Y10T83/04 ,  Y10T83/0453

摘要： Techniques are here disclosed for a solar cell pre-processing method and system for annealing and gettering a solar cell semiconductor wafer having an undesirably high dispersion of transition metals, impurities and other defects. The process forms a surface contaminant layer on the solar cell semiconductor (e.g., silicon) wafer. A surface of the semiconductor wafer receives and holds impurities, as does the surface contaminant layer. The lower-quality semiconductor wafer includes dispersed defects that in an annealing process getter from the semiconductor bulk to form impurity cluster toward the surface contaminant layer. The impurity clusters form within the surface contaminant layer while increasing the purity level in wafer regions from which the dispersed defects gettered. Cooling follows annealing for retaining the impurity clusters and, thereby, maintaining the increased purity level of the semiconductor wafer in regions from which the impurities gettered. Multicrystalline semiconductor wafers having grain boundaries with impurities may also undergo the annealing and gettering of dispersed defects to the grain boundaries, further increasing the semiconductor substrate purity levels.

摘要翻译： 这里公开了用于退火和吸收太阳能电池半导体晶片的太阳能电池预处理方法和系统的技术，所述太阳能电池半导体晶片具有不期望的高过渡金属，杂质和其它缺陷的分散。 该工艺在太阳能电池半导体（例如硅）晶片上形成表面污染物层。 半导体晶片的表面与表面污染物层一样接收和保持杂质。 较低质量的半导体晶片包括在退火工艺中从半导体体积吸收而形成杂质簇朝向表面污染物层的分散缺陷。 杂质簇形成在表面污染物层内，同时增加晶片区域中的纯度水平，分散的缺陷从该区域中得到。 通过冷却进行退火以保留杂质簇，从而在杂质吸收的区域保持半导体晶片的增加的纯度水平。 具有杂质晶界的多晶半导体晶片也可以经历退火和吸收分散的缺陷到晶界，进一步提高半导体衬底纯度水平。