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    Immersion lithography
    1.
    发明申请
    Immersion lithography 失效
    浸没光刻

    公开(公告)号：US20090170041A1

    公开(公告)日：2009-07-02

    申请号：US12318033

    申请日：2008-12-19

    申请人： Dirk De Vries ,  Richard Moerman ,  Cedric Desire Grouwstra ,  Michel Franciscus Johannes Van Rooy

    发明人： Dirk De Vries ,  Richard Moerman ,  Cedric Desire Grouwstra ,  Michel Franciscus Johannes Van Rooy

    IPC分类号： G03F7/20 ,  G03B27/52

    CPC分类号： G03F7/70916 ,  G03F7/70341 ,  G03F7/70608

    摘要： A method of obtaining information related to a defect present in the irradiation of a substrate coated with a layer of radiation sensitive material using immersion lithography is disclosed. The method includes irradiating an area of the radiation sensitive material with a non-patterned radiation beam, the area being irradiated with a dose which is sufficient for the radiation sensitive material to be substantially removed during subsequent development of the radiation sensitive material if the radiation sensitive material is a positive radiation sensitive material, or with a dose which is sufficient for the radiation sensitive material to be substantially insoluble during subsequent development of the radiation sensitive material if the radiation sensitive material is a negative radiation sensitive material. The method further includes developing the radiation sensitive material and obtaining information at least indicative of the topography of radiation sensitive material remaining on the substrate after the radiation sensitive material has been developed in order to obtain information related to the defect.

    摘要翻译： 公开了一种使用浸没式光刻法获得与涂覆有辐射敏感材料层的基板的照射中存在的缺陷有关的信息的方法。 该方法包括用未图案化的辐射束照射辐射敏感材料的区域，如果辐射敏感材料的辐射敏感材料的后续显影期间，该辐射敏感材料的辐射敏感材料的辐射敏感材料的辐照敏感材料的辐射敏感材料的辐射敏感材料 材料是正的辐射敏感材料，或者如果辐射敏感材料是负辐射敏感材料，则辐射敏感材料在辐射敏感材料的后续显影期间足以使辐射敏感材料基本上不溶的剂量。 该方法还包括开发辐射敏感材料并获得至少指示辐射敏感材料已被开发之后剩余在基底上的辐射敏感材料的形貌的信息，以获得与该缺陷有关的信息。

    Immersion lithography
    2.
    发明授权
    Immersion lithography 失效
    浸没光刻

    公开(公告)号：US08129097B2

    公开(公告)日：2012-03-06

    申请号：US12318033

    申请日：2008-12-19

    申请人： Dirk De Vries ,  Richard Moerman ,  Cédric Désiré Grouwstra ,  Michel Franciscus Johannes Van Rooy

    发明人： Dirk De Vries ,  Richard Moerman ,  Cédric Désiré Grouwstra ,  Michel Franciscus Johannes Van Rooy

    IPC分类号： G03F7/26

    CPC分类号： G03F7/70916 ,  G03F7/70341 ,  G03F7/70608

    摘要： A method of obtaining information related to a defect present in the irradiation of a substrate coated with a layer of radiation sensitive material using immersion lithography is disclosed. The method includes irradiating an area of the radiation sensitive material with a non-patterned radiation beam, the area being irradiated with a dose which is sufficient for the radiation sensitive material to be substantially removed during subsequent development of the radiation sensitive material if the radiation sensitive material is a positive radiation sensitive material, or with a dose which is sufficient for the radiation sensitive material to be substantially insoluble during subsequent development of the radiation sensitive material if the radiation sensitive material is a negative radiation sensitive material. The method further includes developing the radiation sensitive material and obtaining information at least indicative of the topography of radiation sensitive material remaining on the substrate after the radiation sensitive material has been developed in order to obtain information related to the defect.

    摘要翻译： 公开了一种使用浸没式光刻法获得与涂覆有辐射敏感材料层的基板的照射中存在的缺陷有关的信息的方法。 该方法包括用未图案化的辐射束照射辐射敏感材料的区域，如果辐射敏感材料的辐射敏感材料的后续显影期间，该辐射敏感材料的辐射敏感材料的辐射敏感材料的辐照敏感材料的辐射敏感材料的辐照敏感材料 材料是正的辐射敏感材料，或者如果辐射敏感材料是负辐射敏感材料，则辐射敏感材料在辐射敏感材料的后续显影期间足以使辐射敏感材料基本上不溶的剂量。 该方法还包括开发辐射敏感材料并获得至少指示辐射敏感材料已被开发之后剩余在基底上的辐射敏感材料的形貌的信息，以获得与该缺陷有关的信息。

    Producing a Marker Pattern and Measurement of an Exposure-Related Property of an Exposure Apparatus
    3.
    发明申请
    Producing a Marker Pattern and Measurement of an Exposure-Related Property of an Exposure Apparatus 审中-公开
    产生曝光装置的曝光相关性质的标记图案和测量

    公开(公告)号：US20100328636A1

    公开(公告)日：2010-12-30

    申请号：US12817315

    申请日：2010-06-17

    申请人： Johannes Anna Quaedackers ,  Paul Christiaan Hinnen ,  Eddy Cornelis Antonius Van Der Heijden ,  Michel Franciscus Johannes Van Rooy ,  Christian Marinus Leewis

    发明人： Johannes Anna Quaedackers ,  Paul Christiaan Hinnen ,  Eddy Cornelis Antonius Van Der Heijden ,  Michel Franciscus Johannes Van Rooy ,  Christian Marinus Leewis

    IPC分类号： G03B27/42 ,  G01N21/47

    CPC分类号： G03F7/70641 ,  G03F7/70625 ,  G03F7/70683

    摘要： In order to determine whether an exposure apparatus is projecting patterns correctly, a marker pattern is used on a mask for printing a specific marker structure onto a substrate. This marker is then measured by an inspection apparatus to determine whether there are errors in exposure-related properties such as focus and dose. The projection of the marker pattern is modified so as to accentuate the production of side lobe-induced features of the marker structure relative to the production of side lobe-inducted features of the product structure. The form of the marker structure is more responsive to exposure variation than the form of the product structure to exposure variation. The marker pattern includes both primary features and secondary features that augment the side lobe arising from the primary feature to print side lobe-induced features on either side of a primary marker structure. Alternatively, the marker pattern is modified by having a different attenuation factor with respect to the product pattern. Alternatively, the marker pattern is modified by providing a marker dose different from the product dose.

    摘要翻译： 为了确定曝光装置是否正确地投影图案，在掩模上使用标记图案将特定的标记结构印刷到基板上。 然后通过检查装置测量该标记物，以确定曝光相关性质如焦点和剂量是否存在错误。 修改标记图案的投影，以便相对于产品结构的旁瓣诱​​导特征的产生来强调标记结构的旁瓣诱​​导特征的产生。 标记结构的形式比曝光变化对产品结构的形式更敏感。 标记图案包括主要特征和次要特征，其增加从主要特征产生的旁瓣以在主标记结构的任一侧上印刷侧叶引起的特征。 或者，通过相对于产品图案具有不同的衰减系数来修改标记图案。 或者，通过提供与产品剂量不同的标记剂量来修饰标记图案。