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    Producing a Marker Pattern and Measurement of an Exposure-Related Property of an Exposure Apparatus
    1.
    发明申请
    Producing a Marker Pattern and Measurement of an Exposure-Related Property of an Exposure Apparatus 审中-公开
    产生曝光装置的曝光相关性质的标记图案和测量

    公开(公告)号：US20100328636A1

    公开(公告)日：2010-12-30

    申请号：US12817315

    申请日：2010-06-17

    申请人： Johannes Anna Quaedackers ,  Paul Christiaan Hinnen ,  Eddy Cornelis Antonius Van Der Heijden ,  Michel Franciscus Johannes Van Rooy ,  Christian Marinus Leewis

    发明人： Johannes Anna Quaedackers ,  Paul Christiaan Hinnen ,  Eddy Cornelis Antonius Van Der Heijden ,  Michel Franciscus Johannes Van Rooy ,  Christian Marinus Leewis

    IPC分类号： G03B27/42 ,  G01N21/47

    CPC分类号： G03F7/70641 ,  G03F7/70625 ,  G03F7/70683

    摘要： In order to determine whether an exposure apparatus is projecting patterns correctly, a marker pattern is used on a mask for printing a specific marker structure onto a substrate. This marker is then measured by an inspection apparatus to determine whether there are errors in exposure-related properties such as focus and dose. The projection of the marker pattern is modified so as to accentuate the production of side lobe-induced features of the marker structure relative to the production of side lobe-inducted features of the product structure. The form of the marker structure is more responsive to exposure variation than the form of the product structure to exposure variation. The marker pattern includes both primary features and secondary features that augment the side lobe arising from the primary feature to print side lobe-induced features on either side of a primary marker structure. Alternatively, the marker pattern is modified by having a different attenuation factor with respect to the product pattern. Alternatively, the marker pattern is modified by providing a marker dose different from the product dose.

    摘要翻译： 为了确定曝光装置是否正确地投影图案，在掩模上使用标记图案将特定的标记结构印刷到基板上。 然后通过检查装置测量该标记物，以确定曝光相关性质如焦点和剂量是否存在错误。 修改标记图案的投影，以便相对于产品结构的旁瓣诱​​导特征的产生来强调标记结构的旁瓣诱​​导特征的产生。 标记结构的形式比曝光变化对产品结构的形式更敏感。 标记图案包括主要特征和次要特征，其增加从主要特征产生的旁瓣以在主标记结构的任一侧上印刷侧叶引起的特征。 或者，通过相对于产品图案具有不同的衰减系数来修改标记图案。 或者，通过提供与产品剂量不同的标记剂量来修饰标记图案。

    Lithographic focus and dose measurement using a 2-D target
    4.
    发明授权
    Lithographic focus and dose measurement using a 2-D target 有权
    使用2-D目标的平版照相重点和剂量测量

    公开(公告)号：US08891061B2

    公开(公告)日：2014-11-18

    申请号：US13062861

    申请日：2009-10-02

    申请人： Christian Marinus Leewis ,  Hugo Augustinus Joseph Cramer ,  Marcus Adrianus Van De Kerkhof ,  Johannes Anna Quaedackers ,  Christine Corinne Mattheus

    发明人： Christian Marinus Leewis ,  Hugo Augustinus Joseph Cramer ,  Marcus Adrianus Van De Kerkhof ,  Johannes Anna Quaedackers ,  Christine Corinne Mattheus

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70641 ,  G03F1/38 ,  G03F7/706 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70675 ,  G03F7/70683

    摘要： In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

    摘要翻译： 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何性质（例如间距）在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构构成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。

    Method and apparatus for overlay measurement
    6.
    发明授权
    Method and apparatus for overlay measurement 有权
    覆盖测量方法和装置

    公开(公告)号：US08982328B2

    公开(公告)日：2015-03-17

    申请号：US12906960

    申请日：2010-10-18

    申请人： Henricus Johannes Lambertus Megens ,  Johannes Anna Quaedackers ,  Christian Marinus Leewis ,  Peter Clement Paul Vanoppen

    发明人： Henricus Johannes Lambertus Megens ,  Johannes Anna Quaedackers ,  Christian Marinus Leewis ,  Peter Clement Paul Vanoppen

    IPC分类号： G03F7/20

    CPC分类号： G03F7/70466 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633

    摘要： A method of measurement of at-resolution overlay offset may be implemented in a scatterometer. At least three targets are provided on a wafer, each target comprising a first marker grating and a second interleaved marker grating and each target having a different overlay bias between its first and second marker. The first and second markers are provided by subsequent lithography steps in a double patterning lithographic process. The targets are measured with a scatterometer and for each target a measured CD of at least one of the markers is determined using reconstruction. The CD of the first marker may be fixed in the reconstruction. The measured CDs and at least one of the overlay biases is used to determine an overlay result corresponding to a minimum measured CD. The overlay result may be determined by fitting a function such as a parabola to the measured CDs and the overlay biases and determining the overlay at the minimum of the fitted function.

    摘要翻译： 分辨率覆盖偏移的测量方法可以在散射仪中实现。 在晶片上提供至少三个靶，每个靶包括第一标记光栅和第二交错标记光栅，并且每个靶在其第一和第二标记之间具有不同的覆盖偏置。 第一和第二标记由双重图案化光刻工艺中的后续光刻步骤提供。 使用散射仪测量目标，并且对于每个目标，使用重建确定至少一个标记的测量CD。 第一个标记的CD可以在重建中被固定。 测量的CD和至少一个覆盖偏差用于确定对应于最小测量CD的覆盖结果。 覆盖结果可以通过将诸如抛物线的函数拟合到所测量的CD和覆盖偏移来确定，并且以最小的拟合函数确定覆盖。

    Method and Apparatus for Overlay Measurement
    7.
    发明申请
    Method and Apparatus for Overlay Measurement 有权
    覆盖测量方法与装置

    公开(公告)号：US20110141450A1

    公开(公告)日：2011-06-16

    申请号：US12906960

    申请日：2010-10-18

    申请人： Henricus Johannes Lambertus MEGENS ,  Johannes Anna Quaedackers ,  Christian Marinus Leewis ,  Peter Clement Paul Vanoppen

    发明人： Henricus Johannes Lambertus MEGENS ,  Johannes Anna Quaedackers ,  Christian Marinus Leewis ,  Peter Clement Paul Vanoppen

    IPC分类号： G01B11/14 ,  G03B27/62

    CPC分类号： G03F7/70466 ,  G03F7/705 ,  G03F7/70625 ,  G03F7/70633

    摘要： A method of measurement of at-resolution overlay offset may be implemented in a scatterometer. At least three targets are provided on a wafer, each target comprising a first marker grating and a second interleaved marker grating and each target having a different overlay bias between its first and second marker. The first and second markers are provided by subsequent lithography steps in a double patterning lithographic process. The targets are measured with a scatterometer and for each target a measured CD of at least one of the markers is determined using reconstruction. The CD of the first marker may be fixed in the reconstruction. The measured CDs and at least one of the overlay biases is used to determine an overlay result corresponding to a minimum measured CD. The overlay result may be determined by fitting a function such as a parabola to the measured CDs and the overlay biases and determining the overlay at the minimum of the fitted function.

    摘要翻译： 分辨率覆盖偏移的测量方法可以在散射仪中实现。 在晶片上提供至少三个靶，每个靶包括第一标记光栅和第二交错标记光栅，并且每个靶在其第一和第二标记之间具有不同的覆盖偏置。 第一和第二标记由双重图案化光刻工艺中的后续光刻步骤提供。 使用散射仪测量目标，并且对于每个目标，使用重建确定至少一个标记的测量CD。 第一个标记的CD可以在重建中被固定。 测量的CD和至少一个覆盖偏差用于确定对应于最小测量CD的覆盖结果。 覆盖结果可以通过将诸如抛物线的函数拟合到所测量的CD和覆盖偏移来确定，并且以最小的拟合函数确定覆盖。

    Lithographic Focus and Dose Measurement Using A 2-D Target
    9.
    发明申请
    Lithographic Focus and Dose Measurement Using A 2-D Target 有权
    使用2-D靶的光刻焦点和剂量测量

    公开(公告)号：US20110249244A1

    公开(公告)日：2011-10-13

    申请号：US13062861

    申请日：2009-10-02

    申请人： Christian Marinus Leewis ,  Hugo Augustinus Joseph Cramer ,  Marcus Adrianus Van de Kerkhof ,  Johannes Anna Quaedackers ,  Christine Corinne Mattheus

    发明人： Christian Marinus Leewis ,  Hugo Augustinus Joseph Cramer ,  Marcus Adrianus Van de Kerkhof ,  Johannes Anna Quaedackers ,  Christine Corinne Mattheus

    IPC分类号： G03B27/52 ,  G03F1/00

    CPC分类号： G03F7/70641 ,  G03F1/38 ,  G03F7/706 ,  G03F7/70608 ,  G03F7/70625 ,  G03F7/70675 ,  G03F7/70683

    摘要： In order to determine whether an exposure apparatus is outputting the correct dose of radiation and its projection system is focusing the radiation correctly, a test pattern is used on a mask for printing a specific marker onto a substrate. This marker is then measured by an inspection apparatus, such as a scatterometer, to determine whether there are errors in focus and dose and other related properties. The test pattern is configured such that changes in focus and dose may be easily determined by measuring the properties of a pattern that is exposed using the mask. The test pattern may be a 2D pattern where physical or geometric properties, e.g., pitch, are different in each of the two dimensions. The test pattern may also be a one-dimensional pattern made up of an array of structures in one dimension, the structures being made up of at least one substructure, the substructures reacting differently to focus and dose and giving rise to an exposed pattern from which focus and dose may be determined.

    摘要翻译： 为了确定曝光装置是否正在输出正确剂量的辐射，并且其投影系统正确地对准辐射，在掩模上使用测试图案将特定标记物印刷到基底上。 然后通过诸如散射仪的检查装置测量该标记，以确定焦点和剂量以及其它相关性质是否存在错误。 测试图案被配置为使得可以通过测量使用掩模曝光的图案的特性容易地确定聚焦和剂量的变化。 测试图案可以是二维图案，其中物理或几何特性，例如间距，在两个维度的每一个中是不同的。 测试图案也可以是由一维结构阵列组成的一维图案，该结构由至少一个子结构构成，该子结构与焦点和剂量不同地反应并产生暴露图案， 可以确定焦点和剂量。