Immersion lithography
    5.
    发明授权
    Immersion lithography 失效
    浸没光刻

    公开(公告)号:US08129097B2

    公开(公告)日:2012-03-06

    申请号:US12318033

    申请日:2008-12-19

    CPC classification number: G03F7/70916 G03F7/70341 G03F7/70608

    Abstract: A method of obtaining information related to a defect present in the irradiation of a substrate coated with a layer of radiation sensitive material using immersion lithography is disclosed. The method includes irradiating an area of the radiation sensitive material with a non-patterned radiation beam, the area being irradiated with a dose which is sufficient for the radiation sensitive material to be substantially removed during subsequent development of the radiation sensitive material if the radiation sensitive material is a positive radiation sensitive material, or with a dose which is sufficient for the radiation sensitive material to be substantially insoluble during subsequent development of the radiation sensitive material if the radiation sensitive material is a negative radiation sensitive material. The method further includes developing the radiation sensitive material and obtaining information at least indicative of the topography of radiation sensitive material remaining on the substrate after the radiation sensitive material has been developed in order to obtain information related to the defect.

    Abstract translation: 公开了一种使用浸没式光刻法获得与涂覆有辐射敏感材料层的基板的照射中存在的缺陷有关的信息的方法。 该方法包括用未图案化的辐射束照射辐射敏感材料的区域,如果辐射敏感材料的辐射敏感材料的后续显影期间,该辐射敏感材料的辐射敏感材料的辐射敏感材料的辐照敏感材料的辐射敏感材料的辐照敏感材料 材料是正的辐射敏感材料,或者如果辐射敏感材料是负辐射敏感材料,则辐射敏感材料在辐射敏感材料的后续显影期间足以使辐射敏感材料基本上不溶的剂量。 该方法还包括开发辐射敏感材料并获得至少指示辐射敏感材料已被开发之后剩余在基底上的辐射敏感材料的形貌的信息,以获得与该缺陷有关的信息。

Patent Agency Ranking