WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE
    1.
    发明申请
    WAVELENGTH CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    波长转换半导体发光器件

    公开(公告)号:US20110121331A1

    公开(公告)日:2011-05-26

    申请号:US12624156

    申请日:2009-11-23

    Abstract: A device includes a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region. A luminescent material is positioned in a path of light emitted by the light emitting layer. A thermal coupling material is disposed in a transparent material. The thermal coupling material has a thermal conductivity greater than a thermal conductivity of the transparent material. The thermal coupling material is positioned to dissipate heat from the luminescent material.

    Abstract translation: 一种器件包括半导体结构,其包括设置在n型区域和p型区域之间的发光层。 发光材料位于由发光层发射的光的路径中。 热耦合材料设置在透明材料中。 热耦合材料的导热率大于透明材料的热导率。 热耦合材料被定位成散发来自发光材料的热量。

Patent Agency Ranking