公开(公告)号：US20090045396A1

公开(公告)日：2009-02-19

申请号：US12078403

申请日：2008-03-31

申请人： Jung Seok Hahn ,  Do Hwan Kim ,  Bon Won Koo ,  Sang Yoon Lee ,  Hyun Sik Moon

发明人： Jung Seok Hahn ,  Do Hwan Kim ,  Bon Won Koo ,  Sang Yoon Lee ,  Hyun Sik Moon

IPC分类号： H01L51/05 ,  G03F7/00 ,  H01L51/40 ,  C08F2/46

CPC分类号： G03F7/092 ,  G03F7/0046 ,  G03F7/038

摘要： Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.

摘要翻译： 本文公开了包含全氟聚醚衍生物，光敏聚合物或其共聚物，光固化剂，钝化层，有机薄膜晶体管和包括其的电子器件的组合物，形成钝化层的方法和制造方法 有机薄膜晶体管和电子器件。 有机薄膜晶体管可以防止或减少氧气和水分渗入其中，从而可以防止或减少由环境空气引起的性能的劣化，防止或减少其劣化，并且可以更容易地形成为图案， 从而表现出适用于电子设备的特性。

公开(公告)号：US20090032809A1

公开(公告)日：2009-02-05

申请号：US12078748

申请日：2008-04-04

申请人： Do Hwan Kim ,  Jung Seok Hahn ,  Sang Yoon Lee ,  Bon Won Koo ,  Hyun Sik Moon

发明人： Do Hwan Kim ,  Jung Seok Hahn ,  Sang Yoon Lee ,  Bon Won Koo ,  Hyun Sik Moon

IPC分类号： H01L51/05 ,  H01L51/40

CPC分类号： H01L51/0512 ,  H01L51/0012 ,  H01L51/0037 ,  H01L51/0529

摘要： Disclosed are an organic thin film transistor and a method of manufacturing the same, in which a crystalline organic binder layer is on the surface of an organic insulating layer and source/drain electrodes or on the surface of the source/drain electrodes. The organic thin film transistor may be improved in two-dimensional geometric lattice matching and interface stability at the interface between the organic semiconductor and the insulating layer or at the interface between the organic semiconductor layer and the electrode, thereby improving the electrical properties of the device.

摘要翻译： 公开了一种有机薄膜晶体管及其制造方法，其中结晶有机粘合剂层位于有机绝缘层和源/漏电极的表面上或源/漏电极的表面上。 有机薄膜晶体管可以在有机半导体和绝缘层之间的界面处或在有机半导体层和电极之间的界面处的二维几何晶格匹配和界面稳定性得到改善，从而改善了器件的电性能 。

公开(公告)号：US07781763B2

公开(公告)日：2010-08-24

申请号：US12078403

申请日：2008-03-31

申请人： Jung Seok Hahn ,  Do Hwan Kim ,  Bon Won Koo ,  Sang Yoon Lee ,  Hyun Sik Moon

发明人： Jung Seok Hahn ,  Do Hwan Kim ,  Bon Won Koo ,  Sang Yoon Lee ,  Hyun Sik Moon

IPC分类号： H01L51/05 ,  G03F7/00 ,  H01L51/40 ,  C08F2/46

CPC分类号： G03F7/092 ,  G03F7/0046 ,  G03F7/038

摘要： Disclosed herein is a composition including a perfluoropolyether derivative, a photosensitive polymer or a copolymer thereof, and a photocuring agent, a passivation layer, organic thin film transistor, and electronic device including the same, a method of forming the passivation layer and methods of fabricating the organic thin film transistor and electronic device. The organic thin film transistor may prevent or reduce oxygen and moisture from infiltrating thereinto, and thus may prevent or reduce the degradation of the performance thereof caused by ambient air, prevent or reduce the deterioration thereof, and may more easily be formed into a pattern, thereby exhibiting characteristics suitable for use in electronics.

摘要翻译： 本文公开了包含全氟聚醚衍生物，光敏聚合物或其共聚物，光固化剂，钝化层，有机薄膜晶体管和包括其的电子器件的组合物，形成钝化层的方法和制造方法 有机薄膜晶体管和电子器件。 有机薄膜晶体管可以防止或减少氧气和水分渗入其中，从而可以防止或减少由环境空气引起的性能的劣化，防止或减少其劣化，并且可以更容易地形成为图案， 从而表现出适用于电子设备的特性。

公开(公告)号：US08617709B2

公开(公告)日：2013-12-31

申请号：US12078778

申请日：2008-04-04

申请人： Hyun Sik Moon ,  Jong Jin Park ,  Bon Won Koo ,  Jung Seok Hahn ,  Do Hwan Kim

发明人： Hyun Sik Moon ,  Jong Jin Park ,  Bon Won Koo ,  Jung Seok Hahn ,  Do Hwan Kim

IPC分类号： B32B5/16

CPC分类号： C07D271/113 ,  B82Y20/00 ,  C07B2200/11 ,  C07F7/1804 ,  H01L51/5088 ,  H01L51/5092 ,  H01L2251/5369 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/2982 ,  Y10T428/2991

摘要： Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device.

摘要翻译： 本文公开了官能化金属纳米颗粒，包含官能化金属纳米颗粒的缓冲层和包括缓冲层的电子器件。 包括根据示例性实施方案的官能化金属纳米颗粒的缓冲层可以改善电子或空穴的注入，并且电子器件中的层之间的电荷迁移率可以形成欧姆接触，并且可以提高电极和缓冲层之间的选择性 在电极上形成缓冲层，从而提高电子器件的效率。

公开(公告)号：US20080299382A1

公开(公告)日：2008-12-04

申请号：US12078778

申请日：2008-04-04

申请人： Hyun Sik Moon ,  Jong Jin Park ,  Bon Won Koo ,  Jung Seok Hahn ,  Do Hwan Kim

发明人： Hyun Sik Moon ,  Jong Jin Park ,  Bon Won Koo ,  Jung Seok Hahn ,  Do Hwan Kim

IPC分类号： B32B5/16

CPC分类号： C07D271/113 ,  B82Y20/00 ,  C07B2200/11 ,  C07F7/1804 ,  H01L51/5088 ,  H01L51/5092 ,  H01L2251/5369 ,  Y10T428/25 ,  Y10T428/256 ,  Y10T428/2982 ,  Y10T428/2991

摘要： Disclosed herein is a functionalized metal nanoparticle, a buffer layer including the functionalized metal nanoparticle, and an electronic device including the buffer layer. The buffer layer including the functionalized metal nanoparticle according to example embodiments may improve the injection of electrons or holes and the charge mobility between layers in the electronic device, may form ohmic contacts, and may improve the selectivity between electrodes and the buffer layer at the time of forming the buffer layer on the electrodes, thereby improving the efficiency of the electronic device.

摘要翻译： 本文公开了官能化金属纳米颗粒，包含官能化金属纳米颗粒的缓冲层和包括缓冲层的电子器件。 包括根据示例性实施方案的官能化金属纳米颗粒的缓冲层可以改善电子或空穴的注入，并且电子器件中的层之间的电荷迁移率可以形成欧姆接触，并且可以提高电极和缓冲层之间的选择性 在电极上形成缓冲层，从而提高电子器件的效率。

公开(公告)号：US20070278481A1

公开(公告)日：2007-12-06

申请号：US11654585

申请日：2007-01-18

申请人： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

发明人： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

IPC分类号： H01L51/05 ,  H01L51/40

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  Y02E10/549

摘要： Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.

摘要翻译： 公开了一种有机电子器件，其中半导体层和源极/漏极可以由适合于室温湿法的相同类型的材料形成，因此具有彼此相似的表面特性，从而降低接触电阻 在半导体层和源极/漏极之间。 用于形成半导体层和源/漏电极的材料可以是通过以预定或给定的量向有机半导体材料中添加碳基纳米颗粒而获得的有机半导体型材料。 因此，半导体或导体的导电性可以根据碳基纳米颗粒的量而变化。

公开(公告)号：US08134145B2

公开(公告)日：2012-03-13

申请号：US11654585

申请日：2007-01-18

申请人： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

发明人： Sang Yoon Lee ,  Jung Seok Hahn ,  Kook Min Han ,  Bon Won Koo ,  Hyun Sik Moon

IPC分类号： H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0048 ,  B82Y10/00 ,  H01L51/0003 ,  H01L51/0021 ,  H01L51/0036 ,  H01L51/0525 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105 ,  Y02E10/549

摘要： Disclosed is an organic electronic device, in which a semiconductor layer and source/drain electrodes may be formed from materials of the same type, suitable for a room-temperature wet process, and thus have surface properties similar to each other, thereby decreasing contact resistance between the semiconductor layer and the source/drain electrodes. The materials for formation of the semiconductor layer and source/drain electrodes may be organic semiconductor type materials obtained by adding carbon-based nanoparticles to organic semiconductor materials in predetermined or given amounts. As such, the conductivity of a semiconductor or conductor may vary depending on the amount of carbon-based nanoparticles.

摘要翻译： 公开了一种有机电子器件，其中半导体层和源极/漏极可以由适合于室温湿法的相同类型的材料形成，因此具有彼此相似的表面特性，从而降低接触电阻 在半导体层和源极/漏极之间。 用于形成半导体层和源/漏电极的材料可以是通过以预定或给定的量向有机半导体材料中添加碳基纳米颗粒而获得的有机半导体型材料。 因此，半导体或导体的导电性可以根据碳基纳米颗粒的量而变化。

公开(公告)号：US07868322B2

公开(公告)日：2011-01-11

申请号：US11819036

申请日：2007-06-25

申请人： Do Hwan Kim ,  Jung Seok Hahn ,  Sang Yoon Lee ,  Bon Won Koo

发明人： Do Hwan Kim ,  Jung Seok Hahn ,  Sang Yoon Lee ,  Bon Won Koo

IPC分类号： H01L51/30 ,  H01L51/40

CPC分类号： H01L51/0545 ,  H01L51/0021 ,  H01L51/105

摘要： Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.

摘要翻译： 公开了通过有机半导体材料的氧化和选择性还原来制造有机薄膜晶体管的方法。 根据该方法，可以保证半导体层与有机薄膜晶体管的源极/漏极之间的界面的稳定性。 因此，通过该方法制造的有机薄膜晶体管可以表现出改进的性能特性，例如最小化或降低的接触电阻和增加的电荷载流子迁移率。

公开(公告)号：US20080128684A1

公开(公告)日：2008-06-05

申请号：US11819036

申请日：2007-06-25

申请人： Do Hwan Kim ,  Jung Seok Hahn ,  Sang Yoon Lee ,  Bon Won Koo

发明人： Do Hwan Kim ,  Jung Seok Hahn ,  Sang Yoon Lee ,  Bon Won Koo

IPC分类号： H01L51/40 ,  H01L51/00

CPC分类号： H01L51/0545 ,  H01L51/0021 ,  H01L51/105

摘要： Disclosed is a method for fabricating an organic thin film transistor by oxidation and selective reduction of an organic semiconductor material. According to the method, stability of interfaces between a semiconductor layer and source/drain electrodes of an organic thin film transistor may be guaranteed. Therefore, an organic thin film transistor fabricated by the method may exhibit improved performance characteristics, e.g., minimized or decreased contact resistance and increased charge carrier mobility.

摘要翻译： 公开了通过有机半导体材料的氧化和选择性还原来制造有机薄膜晶体管的方法。 根据该方法，可以保证半导体层与有机薄膜晶体管的源极/漏极之间的界面的稳定性。 因此，通过该方法制造的有机薄膜晶体管可以表现出改进的性能特性，例如最小化或降低的接触电阻和增加的电荷载流子迁移率。

公开(公告)号：US20070194386A1

公开(公告)日：2007-08-23

申请号：US11604826

申请日：2006-11-28

申请人： Jung Seok Hahn ,  Bon Won Koo ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

发明人： Jung Seok Hahn ,  Bon Won Koo ,  Joo Young Kim ,  Kook Min Han ,  Sang Yoon Lee

IPC分类号： H01L29/94

CPC分类号： H01L51/105 ,  H01L51/0036 ,  H01L51/0545 ,  H01L2251/308

摘要： Disclosed are methods of fabricating organic thin film transistors composed of a substrate, a gate electrode, a gate insulating film, metal oxide source/drain electrodes, and an organic semiconductor layer. The methods include applying a sufficient quantity of a self-assembled monolayer compound containing a live ion to the surfaces of the metal oxide electrodes to form a self-assembled monolayer. The presence of the live ion at the interface between the metal oxide electrodes and the organic semiconductor layer modifies the relative work function of these materials. Further, the presence of the self-assembled monolayer on the gate insulating film tends to reduce hysteresis. Accordingly, organic thin film transistors fabricated in accord with the example embodiments tend to exhibit improved charge mobility, improved gate insulating film properties and decreased hysteresis associated with the organic insulator.

摘要翻译： 公开了制造由基板，栅极，栅极绝缘膜，金属氧化物源极/漏极和有机半导体层组成的有机薄膜晶体管的方法。 所述方法包括将足够量的含有活性离子的自组装单层化合物施加到金属氧化物电极的表面以形成自组装单层。 在金属氧化物电极和有机半导体层之间的界面处存在活性离子来改变这些材料的相对功函数。 此外，在栅极绝缘膜上存在自组装单层趋于减小滞后。 因此，根据示例性实施例制造的有机薄膜晶体管倾向于表现出改善的电荷迁移率，改善的栅极绝缘膜性质和与有机绝缘体相关联的减小的滞后。