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公开(公告)号：US4210950A
公开(公告)日：1980-07-01
申请号：US947020
申请日：1978-09-29
摘要： A number of known circuit configurations require high-ratio-accuracy capacitors. Maintaining such ratios during the various processing steps involved in fabricating the configurations in integrated-circuit form has been found to be difficult. In accordance with this invention, ratio capacitors are made in integrated-circuit form utilizing a unique geometry. In one specific embodiment, a so-called H-section geometry that is largely insensitive to processing variations is utilized to form the capacitors. In this way, high-yield low-parasitic precisely matched pairs of ratio capacitors are achieved.
摘要翻译： 许多已知的电路配置需要高比率精度电容器。 已经发现，在制造集成电路形式的配置中涉及的各种处理步骤期间维持这种比例是困难的。 根据本发明，使用独特的几何形状的集成电路形式的比率电容器。 在一个具体实施例中，利用对处理变化大不敏感的所谓H形截面几何形状来形成电容器。 以这种方式，实现了高产率低寄生精确匹配的比电容对。
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公开(公告)号：US4290034A
公开(公告)日：1981-09-15
申请号：US150459
申请日：1980-05-16
IPC分类号： H03H19/00
CPC分类号： H03H19/004
摘要： A switched capacitor filter circuit which closely matches single pole RC filters at voice frequency. The filter pole is determined by the ratio of a first and second capacitor (C.sub.1 and C.sub.2). Any resulting loss is compensated for by an operational amplifier (13) in combination with third and fourth capacitors (C.sub.3 and C.sub.4) operating as a voltage divider circuit. A switch (16) may be provided for discharging one of the latter capacitors during nonsampling intervals. A further switch (17) may also be provided to cancel charge due to gate-to-drain overlap of the first switch.
摘要翻译： 一种开关电容滤波电路，其在语音频率下与单极RC滤波器紧密匹配。 滤波器极点由第一和第二电容器（C1和C2）的比率决定。 由运算放大器（13）与作为分压器电路工作的第三和第四电容器（C3和C4）相结合的任何损失得到补偿。 可以设置开关（16），用于在非采样间隔期间对后一电容器中的一个放电。 还可以提供另外的开关（17）来消除由于第一开关的栅极到漏极重叠引起的电荷。
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公开(公告)号：US3947716A
公开(公告)日：1976-03-30
申请号：US392147
申请日：1973-08-27
CPC分类号： H01J9/025
摘要： A field emission tip on which a metal adsorbate has been selectively deposited, and a method by which it may be manufactured. In a vacuum, a clean field emission tip is subjected to heating pulses in the presence of an electrostatic field to create thermal field buildup of a selected plane. Emission patterns from the selected plane are observed, and the process of heating the tip within the electrostatic field is repeated until emission is observed from the desired plane. The adsorbate is then evaporated onto the tip. The tip constructed by this process is selectively faceted, with the emitting planar surface having a reduced work function and the non-emitting planar surfaces having an increased work function. A metal adsorbate deposited on the tip so prepared results in a field emitter tip having substantially improved emission characteristics.
摘要翻译： 已经选择性地沉积有金属吸附物的场致发射尖端，以及可以制造金属被吸附物的方法。 在真空中，在存在静电场的情况下，清洁场致发射尖端经受加热脉冲以产生所选择的平面的热场积累。 观察到来自所选平面的发射图案，并且重复在静电场内加热尖端的过程，直到从所需平面观察到发射。 然后将吸附物蒸发到尖端上。 通过该工艺构造的尖端被选择性地刻面，其中发射平面表面具有减小的功函数，并且非发射平面表面具有增加的功函数。 沉积在如此制备的尖端上的金属吸附物导致具有显着改善的发射特性的场致发射极尖端。
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4.发明授权
公开(公告)号：US4371843A
公开(公告)日：1983-02-01
申请号：US166486
申请日：1980-07-07
CPC分类号： H03F3/45179 , H03F1/086 , H03F1/342 , H03F3/345 , H03F3/45183 , H03F2203/45112 , H03F2203/45281 , H03F2203/45454 , H03F2203/45466
摘要： An input differential amplifier stage (10), which feeds an output stage (20), has a feedback loop originating at a node (N.sub.1) in one branch, for controlling the current-source transistor (M.sub.5) of that stage. The feedback loop is characterized by a direct connection to the gate electrode of a transistor (M.sub.8) which drives the output stage (20), while the output at another node (N.sub.2), in the other branch of the differential amplifier stage (10) is fed to another transistor (M.sub.9) which also drives the output stage (20).
摘要翻译： 馈送输出级（20）的输入差分放大器级（10）具有源自一个分支中的节点（N1）的反馈回路，用于控制该级的电流源晶体管（M5）。 反馈回路的特征在于直接连接到驱动输出级（20）的晶体管（M8）的栅电极，而在差动放大级（10）的另一分支中的另一节点（N2）处的输出， 被馈送到也驱动输出级（20）的另一个晶体管（M9）。
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