公开(公告)号：US20060015384A1

公开(公告)日：2006-01-19

申请号：US10890221

申请日：2004-07-14

申请人： Donald O'Neill

发明人： Donald O'Neill

IPC分类号： G06Q99/00

CPC分类号： G06Q10/06 ,  G06Q30/00 ,  G06Q50/184

摘要： A system of infrastructure and communications networks that will enable employees (“intelligent middlemen”) located in offshore areas to facilitate the exchange of economic assets and information among themselves. Such assets include: cultural, technical and legal rights and remedies, software engineering and various other business skills, from buyer to seller. There are two main types of control points involved in the system, at least one GECP operating in the U.S. and managing the network of global enterprises seeking to outsource software development and operations offshore. And at least one OVC, that operates in the target country and manages the network of outsource vendors.

摘要翻译： 一个基础设施和通信网络系统，使位于海外地区的员工（“智慧中间人”）能够促进经济资产和信息交流。 这些资产包括：从买方到卖方的文化，技术和法律权利和补救措施，软件工程和各种其他业务技能。 系统中涉及到两个主要控制点，至少有一个GECP在美国经营，并管理外包软件开发和海外业务的全球企业网络。 至少有一个OVC在目标国家运营，并管理外包供应商的网络。

公开(公告)号：US20070004123A1

公开(公告)日：2007-01-04

申请号：US11173660

申请日：2005-06-30

申请人： Mark Bohr ,  Steven Keating ,  Thomas Letson ,  Anand Murthy ,  Donald O'Neill ,  Willy Rachmady

发明人： Mark Bohr ,  Steven Keating ,  Thomas Letson ,  Anand Murthy ,  Donald O'Neill ,  Willy Rachmady

IPC分类号： H01L21/8238

CPC分类号： H01L29/045 ,  H01L21/30608 ,  H01L29/165 ,  H01L29/665 ,  H01L29/66628 ,  H01L29/66636 ,  H01L29/78 ,  H01L29/7848

摘要： Embodiments are an improved transistor structure and the method of fabricating the structure. In particular, a wet etch of an embodiment forms source and drain regions with an improved tip shape to improve the performance of the transistor by improving control of short channel effects, increasing the saturation current, improving control of the metallurgical gate length, increasing carrier mobility, and decreasing contact resistance at the interface between the source and drain and the silicide.

摘要翻译： 实施例是改进的晶体管结构和制造该结构的方法。 特别地，实施例的湿蚀刻形成具有改进的尖端形状的源极和漏极区域，以通过改善短沟道效应的控制，增加饱和电流，改善冶金栅极长度的控制，增加载流子迁移率来提高晶体管的性能 并且在源极和漏极与硅化物之间的界面处降低接触电阻。

公开(公告)号：US20070016886A1

公开(公告)日：2007-01-18

申请号：US11182120

申请日：2005-07-15

申请人： Donald O'Neill

发明人： Donald O'Neill

IPC分类号： G06F9/44

CPC分类号： G06Q10/06

摘要： The invention specifies a process for carrying out innovation management whereby the roles of multi-disciplined stakeholders are distinguished in such a way as to facilitate the assignment of high value knowledge-based service innovation onshore and to permit the highest skill work to move to the lowest cost of market-driven performance whether onshore or offshore.

摘要翻译： 本发明规定了进行创新管理的过程，从而区分多学科利益相关者的作用，以促进在陆上分配高价值知识型服务创新，并允许最高技能工作转移到最低水平 无论在岸还是离岸，市场驱动的业绩成本。