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    Method of fabricating and repairing ceramic components for semiconductor fabrication using plasma spray process
    8.
    发明授权
    Method of fabricating and repairing ceramic components for semiconductor fabrication using plasma spray process 有权
    使用等离子喷涂工艺制造和修复用于半导体制造的陶瓷部件的方法

    公开(公告)号：US06833279B2

    公开(公告)日：2004-12-21

    申请号：US10309325

    申请日：2002-12-04

    申请人： Jin-Sik Choi

    发明人： Jin-Sik Choi

    IPC分类号： H01L2100

    CPC分类号： H01L21/481 ,  Y10S438/974

    摘要： Provided is a method of fabricating and repairing ceramic components for semiconductor fabrication, through which erosion and polymer deposition occurring on ceramic components for semiconductor fabrication are decreased by modifying the dielectric surface of a component having an electrical insulation characteristic so that the ceramic components can be repaired after being used. The method includes activating a surface layer of a component, which is manufactured by sintering a ceramic, and depositing a dielectric coating layer on the surface layer of the ceramic component using a plasma spray process; when the dielectric coating layer is damaged as the ceramic component is used for semiconductor fabrication, removing the dielectric coating layer; and repairing the ceramic component by depositing a dielectric coating layer on the surface layer of the ceramic component from which the damaged dielectric coating layer has been removed.

    摘要翻译： 提供一种制造和修复用于半导体制造的陶瓷部件的方法，通过这种方法通过改变具有电绝缘特性的部件的电介质表面来降低通过其产生用于半导体制造的陶瓷部件上的侵蚀和聚合物沉积，从而可以修复陶瓷部件 使用后。 该方法包括激活通过烧结陶瓷制造的部件的表面层，以及使用等离子体喷涂工艺在陶瓷部件的表面层上沉积电介质涂层; 当陶瓷部件用于半导体制造时，当电介质涂层被损坏时，去除电介质涂层; 以及通过在去除了损坏的电介质涂层的陶瓷部件的表面层上沉积介电涂层来修复陶瓷部件。

    GROUNDING STRUCTURE, AND HEATER AND CHEMICAL VAPOR DEPOSITION APPARATUS HAVING THE SAME
    9.
    发明申请
    GROUNDING STRUCTURE, AND HEATER AND CHEMICAL VAPOR DEPOSITION APPARATUS HAVING THE SAME 审中-公开
    接地结构及加热器及化学气相沉积装置

    公开(公告)号：US20120267356A1

    公开(公告)日：2012-10-25

    申请号：US13517149

    申请日：2010-11-24

    申请人： Jeong-Duck Choi ,  Hyun-Mi Yuk ,  Jin-Sik Choi

    发明人： Jeong-Duck Choi ,  Hyun-Mi Yuk ,  Jin-Sik Choi

    IPC分类号： H05B3/00 ,  H01R4/66

    CPC分类号： H01R4/643 ,  C23C16/45565 ,  C23C16/4586 ,  C23C16/46 ,  C23C16/509 ,  H01R13/53

    摘要： A ground structure for a PECVD apparatus includes a ground connector is positioned in a receiving portion of a ground mount that is connected to an electrical reservoir. A cylindrical ground clamp holds the ground connector and includes an opening portion along a sidewall in a longitudinal direction. An outer surface of the ground connector makes contact with an inner surface of the ground clamp. A pair of stumbling portions are folded from an outer surface of the ground clamp and spaced apart from each other by a width of the opening portion. A ground wiring is connected to the ground clamp and the ground mount, and the ground current flows to the ground mount via the ground clamp by the ground wiring, thus the ground current is grounded to the electrical reservoir. Accordingly, the electric arc is prevented between the ground connector and the ground clamp.

    摘要翻译： 用于PECVD装置的接地结构包括接地连接器，其位于连接到蓄电池的接地座的接收部分中。 圆柱形接地夹持器保持接地连接器并且包括沿着纵向方向的侧壁的开口部分。 接地连接器的外表面与接地夹的内表面接触。 一对绊脚部从接地夹的外表面折叠并且彼此隔开开口部的宽度。 接地线连接到接地夹和接地座，接地电流通过接地线通过接地线流向地面座，因此接地电流接地到蓄电池。 因此，防止接地连接器和接地夹之间的电弧。