摘要:
A thinner composition is provided which includes about 60-80% by weight of propylene glycol mono-alkyl ether having a boiling point of T1° C., about 10-30% by weight of alkyl acetate having a boiling point of T2° C., and about 1-10% by weight of a solvent. The solvent has a boiling point of T3° C. and satisfies the equation (1). T2
摘要:
A thinner composition is provided which includes about 60-80% by weight of propylene glycol mono-alkyl ether having a boiling point of T1° C., about 10-30% by weight of alkyl acetate having a boiling point of T2° C., and about 1-10% by weight of a solvent. The solvent has a boiling point of T3° C. and satisifes the equation (1). T2
摘要:
A photoresist composition, a method for forming a film pattern using the photoresist composition, and a method for manufacturing a thin film transistor array panel using the photoresist composition are provided. In one embodiment, a photoresist composition includes an alkali-soluble resin, a photosensitive compound, and an additive, for advantageously providing a uniform photoresist in a channel region.
摘要:
A photoresist composition, a method for forming a film pattern using the photoresist composition, and a method for manufacturing a thin film transistor array panel using the photoresist composition are provided. In one embodiment, a photoresist composition includes an alkali-soluble resin, a photosensitive compound, and an additive, for advantageously providing a uniform photoresist in a channel region.
摘要:
The present invention relates to a photoresist composition having high heat resistance used in the production process of an LCD, and more particularly, to a photoresist composition having high heat resistance, capable of decreasing process tact (a way), of process simplification, and of the retrenchment of expenditures. The inventive composition facilitates this through making it possible to skip 5 processes, such as Cr metal deposition forming a metal film, and the photo/etch/PR strip/etch steps of the whole surface of the metal, by substituting the inventive composition for the usual metal film, such that N+ ion doping in production of TFT-LCD can take place due its high heat resistance.
摘要:
Disclosed is a photoresist composition having a good sensitivity and residual layer characteristic and a method of forming a pattern using the same. The photoresist composition includes 5-30% by weight of a polymer resin, 2-10% by weight of a photosensitive compound, 0.1-10% by weight of a sensitivity enhancing agent, 0.1-10% by weight of a sensitivity restraining agent and 60-90% by weight of an organic solvent. A photoresist layer is formed by coating the photoresist composition on a substrate and then drying the coated photoresist composition. Then, thus obtained photoresist layer is exposed by using a mask having a predetermined pattern. Then, a photoresist pattern is formed by developing thus exposed photoresist layer. The photoresist pattern exhibits a uniform layer thickness and critical dimension.
摘要:
The present invention relates to a photoresist composition for an MMN (multi-micro nozzle) head coater, more particularly to a photoresist composition comprising a novolak resin with a molecular weight ranging from 2000 to 12,000, a diazide photoactive compound, an organic solvent, and a Si-based surfactant for use in liquid crystal display circuits.The photoresist composition for liquid crystal display circuits of the present invention solves the stain problem, which occurs in MMN head coaters used for large-scale substrate glass, and improves coating characteristics, so that it can be utilized industrially and is expected to significantly improve productivity.
摘要:
A photoresist composition for a spinless coater includes a novolak resin having a weight average molecular weight of about 2,000 to about 15,000, a diazide based photosensitive compound and a volatile organic solvent. The photoresist composition is applied to a substrate of a liquid crystal display apparatus to reduce blots and enhance application uniformity. A highly volatile solvent, such as n-propyl acetate (nPAC) or n-butyl acetate (nBA) is used in the photoresist composition as the volatile organic solvent. The photoresist composition including the volatile organic solvent gives a photoresist film that has a uniform thickness. Hence, the generation of small resin blots and thick blots may be reduced.
摘要:
Disclosed is a photoresist composition including a thermal acid generator and a method of forming a pattern using the same. The photoresist composition includes about 100 parts by weight of an alkali-soluble acryl copolymer, about 5-100 parts by weight of 1,2-quinonediazide compound, about 2-35 parts by weight of nitrogen-containing cross-linking agent and about 0.1-10 parts by weight of a thermal acid generator which produces an acid by heat. The photoresist composition is coated on a substrate and dried to form a photoresist layer. The photoresist layer is exposed by using a mask having a predetermined shape. Thus obtained exposed photoresist layer is developed by using an aqueous alkaline solution to form a photoresist pattern. Thus obtained photoresist pattern is heated to be cured without generating thermal reflow.
摘要:
An organic layer composition and a liquid crystal display including the same are provided. An organic layer composition according to an exemplary embodiment includes a binder formed by copolymerizing compounds included in a first group and a second group, wherein the first group includes an acryl-based compound and the second group includes a compound without a —COO— group.