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    MICRO-OPTICAL SWITCHING DEVICE, IMAGE DISPLAY APPARATUS INCLUDING MICRO-OPTICAL SWITCHING DEVICE, AND METHOD OF MANUFACTURING MICRO-OPTICAL SWITCHING DEVICE
    1.
    发明申请
    MICRO-OPTICAL SWITCHING DEVICE, IMAGE DISPLAY APPARATUS INCLUDING MICRO-OPTICAL SWITCHING DEVICE, AND METHOD OF MANUFACTURING MICRO-OPTICAL SWITCHING DEVICE 有权
    微光开关装置，包括微光开关装置的图像显示装置，以及制造微光开关装置的方法

    公开(公告)号：US20130070445A1

    公开(公告)日：2013-03-21

    申请号：US13461387

    申请日：2012-05-01

    申请人： Dong-sik SHIM ,  Jong-seok KIM ,  Yong-seop YOON ,  Hyung CHOI ,  Woon-bae KIM

    发明人： Dong-sik SHIM ,  Jong-seok KIM ,  Yong-seop YOON ,  Hyung CHOI ,  Woon-bae KIM

    IPC分类号： G09F13/04 ,  B05D5/12 ,  G02B26/08

    CPC分类号： G02B26/0841

    摘要： A micro-optical switching device, an image display apparatus including the micro-optical switching device, and a method of manufacturing the micro-optical switching device are provided. The micro-optical switching device includes a substrate; a first electrode disposed on the substrate and including a first opening array, wherein the first opening array includes a plurality of openings; and a second electrode disposed spaced apart from the first electrode and including a second opening array including a plurality of openings, wherein the plurality of openings of the second opening array do not overlap with the plurality of openings of the first opening array.

    摘要翻译： 提供一种微型光开关装置，包括该微型光开关装置的图像显示装置以及该微型光开关装置的制造方法。 微光开关装置包括：基板; 第一电极，其设置在所述基板上并且包括第一开口阵列，其中所述第一开口阵列包括多个开口; 以及第二电极，与第一电极间隔开并且包括包括多个开口的第二开口阵列，其中第二开口阵列的多个开口不与第一开口阵列的多个开口重叠。

    APPARATUS FOR AND METHOD OF CONTROLLING JETTING OF INK IN INKJET PRINTER
    3.
    发明申请
    APPARATUS FOR AND METHOD OF CONTROLLING JETTING OF INK IN INKJET PRINTER 有权
    喷墨打印机中喷墨喷嘴的设备和方法

    公开(公告)号：US20100002036A1

    公开(公告)日：2010-01-07

    申请号：US12367907

    申请日：2009-02-09

    申请人： Yong-won JEONG ,  Hyung CHOI ,  Yung-seop YOON ,  Moon-chul LEE ,  Dong-shik SHIM

    发明人： Yong-won JEONG ,  Hyung CHOI ,  Yung-seop YOON ,  Moon-chul LEE ,  Dong-shik SHIM

    IPC分类号： B41J29/38

    CPC分类号： B41J2/0458 ,  B41J2/04541 ,  B41J2/0455 ,  B41J2/04563

    摘要： Provided are an apparatus and method of controlling jetting of ink of an inkjet printer. The apparatus includes at least one print head chip, which includes a temperature sensor for sensing the temperature of the print head chip and a voltage controlled oscillator (VCO) for converting the sensed temperature to a frequency component. The apparatus may also include a counter, which converts the frequency component to a code information using a reference frequency component, and a controller, which controls the ink jetting operation of the at least one print head chip based on the code information and/or the frequency component.

    摘要翻译： 提供一种控制喷墨打印机墨水喷射的装置和方法。 该装置包括至少一个打印头芯片，其包括用于感测打印头芯片的温度的温度传感器和用于将感测到的温度转换成频率分量的压控振荡器（VCO）。 该装置还可以包括使用参考频率分量将频率分量转换为码信息的计数器，以及基于代码信息和/或控制器控制至少一个打印头芯片的喷墨操作的控制器 频率分量。

    METHOD OF FORMING DECOUPLED COMB ELECTRODES BY SELF-ALIGNMENT ETCHING
    4.
    发明申请
    METHOD OF FORMING DECOUPLED COMB ELECTRODES BY SELF-ALIGNMENT ETCHING 审中-公开
    通过自对准蚀刻形成分解的电极的方法

    公开(公告)号：US20070287231A1

    公开(公告)日：2007-12-13

    申请号：US11733791

    申请日：2007-04-11

    申请人： Seok-whan CHUNG ,  Hyung CHOI ,  Seok-jin KANG ,  Young-chul KO

    发明人： Seok-whan CHUNG ,  Hyung CHOI ,  Seok-jin KANG ,  Young-chul KO

    IPC分类号： H01L21/84

    CPC分类号： B81C1/00166 ,  B81B2201/033 ,  B81B2201/042 ,  G02B26/0841

    摘要： A method of etching decoupled comb electrodes by self-alignment is provided The etching method is a self-alignment etching method for forming upper comb electrodes in a first silicon layer of a silicon on insulator (SOI) substrate and lower comb electrodes in a second silicon layer of the SOI substrate. The self-alignment etching method includes forming a first metal mask on the first silicon layer so as to cover portions of the first silicon layer where the upper comb electrodes are to be formed, forming a first photoresist (PR) mask on the first metal mask and portions of the first silicon layer corresponding to the lower comb electrodes, selectively etching the first silicon layer using the first PR mask as an etch barrier layer, selectively etching an insulating layer of the SOI substrate using the first PR mask as an etch barrier layer, selectively etching the second silicon layer of the SOI substrate using the first PR mask as an etch barrier layer, forming a second PR mask on portions of the second silicon layer corresponding to the upper comb electrodes, forming a second metal mask entirely on an exposed bottom surface of the second silicon layer including the second PR mask, removing the first and second PR masks, and etching the first and second silicon layers using the remaining first and second metal masks so as to form the upper comb electrodes and the lower comb electrodes.

    摘要翻译： 提供了通过自对准来蚀刻去耦合梳状电极的方法。蚀刻方法是用于在绝缘体上硅（SOI）衬底的第一硅层中形成上梳状电极的自对准蚀刻方法和在第二硅中的下梳状电极 SOI衬底层。 自对准蚀刻方法包括在第一硅层上形成第一金属掩模以覆盖将要形成上梳状电极的第一硅层的部分，在第一金属掩模上形成第一光致抗蚀剂（PR）掩模 并且第一硅层对应于下梳状电极的部分，使用第一PR掩模选择性地蚀刻第一硅层作为蚀刻阻挡层，使用第一PR掩模作为蚀刻阻挡层选择性地蚀刻SOI衬底的绝缘层 使用第一PR掩模作为蚀刻阻挡层选择性地蚀刻SOI衬底的第二硅层，在对应于上梳状电极的第二硅层的部分上形成第二PR掩模，完全在暴露的 第二硅层的底表面包括第二PR掩模，去除第一和第二PR掩模，以及使用rema蚀刻第一和第二硅层 在第一和第二金属掩模上形成上梳状电极和下梳状电极。