公开(公告)号：US08533391B2

公开(公告)日：2013-09-10

申请号：US13365485

申请日：2012-02-03

申请人： Donghyun Song ,  Chanik Park ,  Sang Lyul Min ,  Sheayun Lee ,  Taesung Jung ,  Sang-Jin Oh ,  Moonwook Oh ,  Jisoo Kim

发明人： Donghyun Song ,  Chanik Park ,  Sang Lyul Min ,  Sheayun Lee ,  Taesung Jung ,  Sang-Jin Oh ,  Moonwook Oh ,  Jisoo Kim

IPC分类号： G06F12/00

CPC分类号： G06F3/0656 ,  G06F3/0616 ,  G06F3/0625 ,  G06F3/0679 ,  Y02D10/154

摘要： A storage device includes a host interface, a buffer memory, a storage medium, and a controller. The host interface is configured to receive storage data and an invalidation command, where the invalidation command is indicative of invalid data among the storage data received by the host interface. The buffer memory is configured to temporarily store the storage data received by the host interface. The controller is configured to execute a transcribe operation in which the storage data temporarily stored in the buffer memory is selectively stored in the storage medium. Further, the controller is responsive to receipt of the invalidation command to execute a logging process when a memory capacity of the invalid data indicated by the invalidation command is equal to or greater than a reference capacity.

摘要翻译： 存储装置包括主机接口，缓冲存储器，存储介质和控制器。 主机接口被配置为接收存储数据和无效命令，其中无效命令指示由主机接口接收的存储数据中的无效数据。 缓冲存储器被配置为临时存储由主机接口接收的存储数据。 控制器被配置为执行转录操作，其中临时存储在缓冲存储器中的存储数据被选择性地存储在存储介质中。 此外，当由无效命令指示的无效数据的存储器容量等于或大于参考容量时，控制器响应于接收到无效命令以执行记录处理。

公开(公告)号：US08122193B2

公开(公告)日：2012-02-21

申请号：US12775767

申请日：2010-05-07

申请人： Donghyun Song ,  Chanik Park ,  Sang Lyul Min ,  Sheayun Lee ,  Taesung Jung ,  Sang-Jin Oh ,  Moonwook Oh ,  Jisoo Kim

发明人： Donghyun Song ,  Chanik Park ,  Sang Lyul Min ,  Sheayun Lee ,  Taesung Jung ,  Sang-Jin Oh ,  Moonwook Oh ,  Jisoo Kim

IPC分类号： G06F12/00

CPC分类号： G06F3/0656 ,  G06F3/0616 ,  G06F3/0625 ,  G06F3/0679 ,  Y02D10/154

摘要： A storage device includes a host interface, a buffer memory, a storage medium, and a controller. The host interface is configured to receive storage data and an invalidation command, where the invalidation command is indicative of invalid data among the storage data received by the host interface. The buffer memory is configured to temporarily store the storage data received by the host interface. The controller is configured to execute a transcribe operation in which the storage data temporarily stored in the buffer memory is selectively stored in the storage medium. Further, the controller is responsive to receipt of the invalidation command to execute a logging process when a memory capacity of the invalid data indicated by the invalidation command is equal to or greater than a reference capacity, and to execute an invalidation process when the memory capacity of the invalid data is less than the reference capacity. The logging process includes logging a location of the invalid data, and the invalidation process includes invalidating the invalid data.

摘要翻译： 存储装置包括主机接口，缓冲存储器，存储介质和控制器。 主机接口被配置为接收存储数据和无效命令，其中无效命令指示由主机接口接收的存储数据中的无效数据。 缓冲存储器被配置为临时存储由主机接口接收的存储数据。 控制器被配置为执行转录操作，其中临时存储在缓冲存储器中的存储数据被选择性地存储在存储介质中。 此外，当由无效命令指示的无效数据的存储器容量等于或大于参考容量时，控制器响应于接收到无效命令以执行记录处理，并且当存储器容量 的无效数据小于参考能力。 记录过程包括记录无效数据的位置，无效过程包括使无效数据无效。

公开(公告)号：US20120144090A1

公开(公告)日：2012-06-07

申请号：US13365485

申请日：2012-02-03

申请人： Donghyun Song ,  Chanik Park ,  Sang Lyul Min ,  Sheayun Lee ,  Taesung Jung ,  Sang-Jin Oh ,  Moonwook Oh ,  Jisoo Kim

发明人： Donghyun Song ,  Chanik Park ,  Sang Lyul Min ,  Sheayun Lee ,  Taesung Jung ,  Sang-Jin Oh ,  Moonwook Oh ,  Jisoo Kim

IPC分类号： G06F12/00 ,  G06F12/02

CPC分类号： G06F3/0656 ,  G06F3/0616 ,  G06F3/0625 ,  G06F3/0679 ,  Y02D10/154

摘要： A storage device includes a host interface, a buffer memory, a storage medium, and a controller. The host interface is configured to receive storage data and an invalidation command, where the invalidation command is indicative of invalid data among the storage data received by the host interface. The buffer memory is configured to temporarily store the storage data received by the host interface. The controller is configured to execute a transcribe operation in which the storage data temporarily stored in the buffer memory is selectively stored in the storage medium. Further, the controller is responsive to receipt of the invalidation command to execute a logging process when a memory capacity of the invalid data indicated by the invalidation command is equal to or greater than a reference capacity.

摘要翻译： 存储装置包括主机接口，缓冲存储器，存储介质和控制器。 主机接口被配置为接收存储数据和无效命令，其中无效命令指示由主机接口接收的存储数据中的无效数据。 缓冲存储器被配置为临时存储由主机接口接收的存储数据。 控制器被配置为执行转录操作，其中临时存储在缓冲存储器中的存储数据被选择性地存储在存储介质中。 此外，当由无效命令指示的无效数据的存储器容量等于或大于参考容量时，控制器响应于接收到无效命令以执行记录处理。

公开(公告)号：US20100217927A1

公开(公告)日：2010-08-26

申请号：US12775767

申请日：2010-05-07

申请人： Donghyun Song ,  Chanik Park ,  Sang Lyul Min ,  Sheayun Lee ,  Taesung Jung ,  Sang-Jin Oh ,  Moonwook Oh ,  Jisoo Kim

发明人： Donghyun Song ,  Chanik Park ,  Sang Lyul Min ,  Sheayun Lee ,  Taesung Jung ,  Sang-Jin Oh ,  Moonwook Oh ,  Jisoo Kim

IPC分类号： G06F12/00 ,  G06F12/10 ,  G06F3/00 ,  G06F12/02

CPC分类号： G06F3/0656 ,  G06F3/0616 ,  G06F3/0625 ,  G06F3/0679 ,  Y02D10/154

摘要： A storage device includes a host interface, a buffer memory, a storage medium, and a controller. The host interface is configured to receive storage data and an invalidation command, where the invalidation command is indicative of invalid data among the storage data received by the host interface. The buffer memory is configured to temporarily store the storage data received by the host interface. The controller is configured to execute a transcribe operation in which the storage data temporarily stored in the buffer memory is selectively stored in the storage medium. Further, the controller is responsive to receipt of the invalidation command to execute a logging process when a memory capacity of the invalid data indicated by the invalidation command is equal to or greater than a reference capacity, and to execute an invalidation process when the memory capacity of the invalid data is less than the reference capacity. The logging process includes logging a location of the invalid data, and the invalidation process includes invalidating the invalid data.

摘要翻译： 存储装置包括主机接口，缓冲存储器，存储介质和控制器。 主机接口被配置为接收存储数据和无效命令，其中无效命令指示由主机接口接收的存储数据中的无效数据。 缓冲存储器被配置为临时存储由主机接口接收的存储数据。 控制器被配置为执行转录操作，其中临时存储在缓冲存储器中的存储数据被选择性地存储在存储介质中。 此外，当由无效命令指示的无效数据的存储器容量等于或大于参考容量时，控制器响应于接收到无效命令以执行记录处理，并且当存储器容量 的无效数据小于参考能力。 记录过程包括记录无效数据的位置，无效过程包括使无效数据无效。

公开(公告)号：US20120246729A1

公开(公告)日：2012-09-27

申请号：US13425373

申请日：2012-03-20

申请人： Byung-Gook Kim ,  Chanik Park ,  Jisoo Kim ,  Dawoon Jung

发明人： Byung-Gook Kim ,  Chanik Park ,  Jisoo Kim ,  Dawoon Jung

IPC分类号： G06F21/00

CPC分类号： G06F21/567 ,  G06F21/78

摘要： A data storage device includes a storage medium and a controller circuit configured to be coupled to an external host to provide an interface between the external host and the storage medium, the controller circuit configured to detect a virus carried by a data file transferred to and/or stored in the storage medium. The controller circuit may be further configured to cure the detected virus.

摘要翻译： 数据存储设备包括存储介质和控制器电路，该控制器电路被配置为耦合到外部主机以在外部主机和存储介质之间提供接口，该控制器电路被配置为检测由传送到和/ 或存储在存储介质中。 控制器电路还可以被配置成固化检测到的病毒。

公开(公告)号：US08683594B2

公开(公告)日：2014-03-25

申请号：US13425373

申请日：2012-03-20

申请人： Byung-Gook Kim ,  Chanik Park ,  Jisoo Kim ,  Dawoon Jung

发明人： Byung-Gook Kim ,  Chanik Park ,  Jisoo Kim ,  Dawoon Jung

IPC分类号： G06F11/00 ,  G06F12/14 ,  G06F12/16 ,  G08B23/00 ,  G06F9/00 ,  G06F15/16 ,  G06F17/00 ,  G06F11/30

CPC分类号： G06F21/567 ,  G06F21/78

摘要： A data storage device includes a storage medium and a controller circuit configured to be coupled to an external host to provide an interface between the external host and the storage medium, the controller circuit configured to detect a virus carried by a data file transferred to and/or stored in the storage medium. The controller circuit may be further configured to cure the detected virus.

摘要翻译： 数据存储设备包括存储介质和控制器电路，该控制器电路被配置为耦合到外部主机以在外部主机和存储介质之间提供接口，该控制器电路被配置为检测由传送到和/ 或存储在存储介质中。 控制器电路还可以被配置成固化检测到的病毒。

公开(公告)号：US20110123020A1

公开(公告)日：2011-05-26

申请号：US12874799

申请日：2010-09-02

申请人： Hong-Mook Choi ,  Jisoo Kim ,  Xingguang Feng ,  Woo-Hyun Lee

发明人： Hong-Mook Choi ,  Jisoo Kim ,  Xingguang Feng ,  Woo-Hyun Lee

IPC分类号： H04L9/28

CPC分类号： H04L9/0637 ,  H04L2209/125 ,  H04L2209/20

摘要： An encryption/decryption method of an endecryptor including a plurality of endecryption units supporting an XES mode with tweak and ciphertext streaming (XTS) includes dividing an input data stream into consecutive data units; inputting the divided data units to the endecryption units, respectively; and simultaneously processing the input data units at the respective endecryption units. According to the encryption/decryption method, parallel processing is performed to encrypt/decrypt data at higher speed.

摘要翻译： 包括支持具有调整和密文流传输（XTS）的XES模式的多个边界处理单元的加密/解密方法包括：将输入数据流划分成连续的数据单元; 将分割的数据单元分别输入到内部加密单元; 并且在相应的内部加密单元处同时处理输入数据单元。 根据加密/解密方法，并行处理以较高的速度加密/解密数据。

公开(公告)号：US20110031214A1

公开(公告)日：2011-02-10

申请号：US12537179

申请日：2009-08-06

申请人： Jisoo Kim ,  Thorsten B. Lill

发明人： Jisoo Kim ,  Thorsten B. Lill

IPC分类号： C23F1/00 ,  C23F1/08

CPC分类号： H01L21/68785 ,  C23C16/4412 ,  H01J37/185 ,  H01J37/3244 ,  H01J37/32449 ,  H01J2237/182 ,  H01J2237/2001 ,  H01L21/6719

摘要： A method and apparatus for vacuum processing of a workpiece, the apparatus including a flow equalizer disposed in a vacuum processing chamber between a workpiece support pedestal and a pump port located in a wall of the vacuum processing chamber. In an embodiment, the flow equalizer has a first annular surface concentric about the workpiece support pedestal to provide conductance symmetry about the workpiece support even when the pump port is asymmetrically positioned within the vacuum processing chamber. In an embodiment, the flow equalizer has a second annular surface facing a lower surface of the workpiece support pedestal to restrict conductance as the flow equalizer is moved is response to a chamber pressure control signal. In an embodiment, the apparatus for vacuum processing of a workpiece includes tandem vacuum processing chambers sharing a vacuum pump with each tandem chamber including a flow equalizer to reduce cross-talk between the tandem chambers.

摘要翻译： 一种用于真空处理工件的方法和装置，该装置包括设置在工件支撑基座和位于真空处理室的壁中的泵口之间的真空处理室中的流量均衡器。 在一个实施例中，流量均衡器具有围绕工件支撑基座同心的第一环形表面，以便即使当泵口不对称地位于真空处理室内时也能够提供关于工件支撑件的电导对称性。 在一个实施例中，流量均衡器具有面向工件支撑基座的下表面的第二环形表面，以在流量均衡器移动时限制电导响应于腔室压力控制信号。 在一个实施例中，用于真空处理工件的装置包括串联真空处理室，其共享真空泵，每个串联室包括流量均衡器以减少串联室之间的串扰。

公开(公告)号：US07601246B2

公开(公告)日：2009-10-13

申请号：US10952088

申请日：2004-09-29

申请人： Jisoo Kim ,  Jong Shon ,  Biming Yen ,  Peter Loewenhardt

发明人： Jisoo Kim ,  Jong Shon ,  Biming Yen ,  Peter Loewenhardt

IPC分类号： C23C14/34

CPC分类号： C23C14/3457 ,  C23C14/185 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76814 ,  H01L2221/1063

摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.

摘要翻译： 将含硅或金属材料的保护涂层沉积到半导体衬底上的方法包括将这种材料从电极溅射到等离子体处理室中的半导体衬底上。 保护材料可以沉积在覆盖低k材料和/或低k材料的多层掩模上。 该方法可用于双镶嵌工艺中以保护掩模并增强蚀刻选择性，以在抗蚀剂剥离过程中保护低k材料免受碳的损耗，和/或保护低k材料免受水分吸收。

公开(公告)号：US20090020417A1

公开(公告)日：2009-01-22

申请号：US10952088

申请日：2004-09-29

申请人： Jisoo Kim ,  Jong Shon ,  Bi Ming Yen ,  Peter Loewenhardt

发明人： Jisoo Kim ,  Jong Shon ,  Bi Ming Yen ,  Peter Loewenhardt

IPC分类号： C23C14/34

CPC分类号： C23C14/3457 ,  C23C14/185 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/76814 ,  H01L2221/1063

摘要： Methods of depositing a protective coating of a silicon-containing or metallic material onto a semiconductor substrate include sputtering such material from an electrode onto a semiconductor substrate in a plasma processing chamber. The protective material can be deposited onto a multi-layer mask overlying a low-k material and/or onto the low-k material. The methods can be used in dual damascene processes to protect the mask and enhance etch selectivity, to protect the low-k material from carbon depletion during resist strip processes, and/or protect the low-k material from absorption of moisture.