公开(公告)号：US08513136B2

公开(公告)日：2013-08-20

申请号：US13484999

申请日：2012-05-31

申请人： Doo-hwan Park ,  Gyu-hwan Oh ,  Dong-whee Kwon ,  Kyung-min Chung

发明人： Doo-hwan Park ,  Gyu-hwan Oh ,  Dong-whee Kwon ,  Kyung-min Chung

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L45/06 ,  H01L27/2409 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： Memory devices and methods of forming memory devices including forming a plurality of preliminary electrodes, each of the plurality of preliminary electrodes including a protruding region, protruding from a first mold insulating layer, forming a second mold insulating layer on the first mold insulating layer, removing at least a portion of the plurality of preliminary electrodes to form a plurality of openings in the second mold insulating layer and a plurality of lower electrodes, and forming a plurality of memory elements in the plurality of openings. Memory devices and methods of forming memory devices including forming one or more insulating layers on sidewalls of all or part of a plurality of lower electrodes and/or a plurality of memory elements.

摘要翻译： 存储器件和形成存储器件的方法包括形成多个预备电极，所述多个初步电极中的每一个包括从第一模绝缘层突出的突出区域，在第一模绝缘层上形成第二模绝缘层，去除 所述多个初步电极的至少一部分在所述第二模具绝缘层中形成多个开口，以及多个下部电极，并且在所述多个开口中形成多个存储元件。 存储器件和形成存储器件的方法包括在多个下部电极和/或多个存储器元件的全部或部分的侧壁上形成一个或多个绝缘层。

公开(公告)号：US20120305522A1

公开(公告)日：2012-12-06

申请号：US13484999

申请日：2012-05-31

申请人： Doo-hwan Park ,  Gyu-hwan Oh ,  Dong-whee Kwon ,  Kyung-min Chung

发明人： Doo-hwan Park ,  Gyu-hwan Oh ,  Dong-whee Kwon ,  Kyung-min Chung

IPC分类号： B05D5/12

CPC分类号： H01L45/06 ,  H01L27/2409 ,  H01L45/1233 ,  H01L45/124 ,  H01L45/126 ,  H01L45/1273 ,  H01L45/143 ,  H01L45/144 ,  H01L45/148 ,  H01L45/1683

摘要： Memory devices and methods of forming memory devices including forming a plurality of preliminary electrodes, each of the plurality of preliminary electrodes including a protruding region, protruding from a first mold insulating layer, forming a second mold insulating layer on the first mold insulating layer, removing at least a portion of the plurality of preliminary electrodes to form a plurality of openings in the second mold insulating layer and a plurality of lower electrodes, and forming a plurality of memory elements in the plurality of openings. Memory devices and methods of forming memory devices including forming one or more insulating layers on sidewalls of all or part of a plurality of lower electrodes and/or a plurality of memory elements.

摘要翻译： 存储器件和形成存储器件的方法包括形成多个预备电极，所述多个初步电极中的每一个包括从第一模绝缘层突出的突出区域，在第一模绝缘层上形成第二模绝缘层，去除 所述多个初步电极的至少一部分在所述第二模具绝缘层中形成多个开口，以及多个下部电极，并且在所述多个开口中形成多个存储元件。 存储器件和形成存储器件的方法包括在多个下部电极和/或多个存储器元件的全部或部分的侧壁上形成一个或多个绝缘层。